2SC3707 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Transistor2SC3707Silicon NPN epitaxial planer typeFor UHF amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesPossible with the small current and low voltage.High transition frequency fT.1Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazinepacking.2Absolute Max

Transistor2SC3707Silicon NPN epitaxial planer typeFor UHF amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesPossible with the small current and low voltage.High transition frequency fT.1Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazinepacking.2Absolute Max

SMD Type TransistorsNPN Transistors2SC3707SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=10mA Collector Emitter Voltage VCEO=7V1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 10 Collecto

2SC3709A TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3709A High-Current Switching Applications Unit: mm Low collector saturation voltage: V = 0.4 V (max) CE (sat) High-speed switching: tstg = 1.0 s (typ.) Complementary to 2SA1451A Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 60 VCollector-emitt

Ordering number:EN2217APNP/NPN Epitaxial Planar Silicon Transistor2SA1450/2SC3708Low-Frequency Driver ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm AF amp, AF power amp.2003A High breakdown voltage : VCEO>80V[2SA1450/2SC3708]JEDEC : TO-92 B : Base( ) : 2SA1450 EIAJ : SC-43 C : CollectorSANYO : NP E : EmitterSpecificationsAbsolute

Ordering number:EN2146BNPN Epitaxial Planar Silicon Darlington Transistor2SC3705Printer Driver ApplicationsApplications Package Dimensions Switching of L load (motor drivers, printer drivers,unit:mmrelay drivers).2009B[2SC3705]Features High DC current gain. Large current capacityu and wide ASO. Contains a Zener diode across collector and base.1 : Emitter

Transistor2SC3704Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesLow noise figure NF.High gain.1High transition frequency fT.3Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine2packing.Absolute Maxi

Transistor2SC3704Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesLow noise figure NF.High gain.1High transition frequency fT.3Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine2packing.Absolute Maxi

SMD Type TransistorsNPN Transistors2SC3704SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=80mA Collector Emitter Voltage VCEO=10V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collec

isc Silicon NPN Power Transistor 2SC3709ADESCRIPTIONLow Collector Saturation Voltage-: V = 0.4V(Max)@I = 6ACE(sat) CGood Linearity of hFEComplement to Type 2SA1451AAPPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBOV Collector-Emitter Voltage 50 VCEOV

isc Silicon NPN Power Transistor 2SC3709DESCRIPTIONLow Collector Saturation Voltage-: V = 0.4V(Max)@I = 6ACE(sat) CGood Linearity of hFEComplement to Type 2SA1451Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU