2SC3709Y. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2SC3709Y datasheet

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2SC3709A TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3709A High-Current Switching Applications Unit mm Low collector saturation voltage V = 0.4 V (max) CE (sat) High-speed switching tstg = 1.0 s (typ.) Complementary to 2SA1451A Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitt

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7.3. Size:222K inchange semiconductor
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isc Silicon NPN Power Transistor 2SC3709A DESCRIPTION Low Collector Saturation Voltage- V = 0.4V(Max)@I = 6A CE(sat) C Good Linearity of h FE Complement to Type 2SA1451A APPLICATIONS Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 50 V CEO V

7.4. Size:205K inchange semiconductor
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isc Silicon NPN Power Transistor 2SC3709 DESCRIPTION Low Collector Saturation Voltage- V = 0.4V(Max)@I = 6A CE(sat) C Good Linearity of h FE Complement to Type 2SA1451 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU

Otros transistores... 2SC3707 , 2SC3708 , 2SC3708R , 2SC3708S , 2SC3708T , 2SC3708U , 2SC3709 , 2SC3709O , S9014 , 2SC370G , 2SC370-T , 2SC371 , 2SC3710 , 2SC3710O , 2SC3710Y , 2SC3711 , 2SC3712 .