2SC370-T Todos los transistores

 8.1. Size:142K  toshiba
 2sc3709a.pdf

2SC3709A TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3709A High-Current Switching Applications Unit mm Low collector saturation voltage V = 0.4 V (max) CE (sat) High-speed switching tstg = 1.0 s (typ.) Complementary to 2SA1451A Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitt

 8.2. Size:213K  toshiba
 2sc3709.pdf

 8.3. Size:127K  sanyo
 2sa1450 2sc3708.pdf

Ordering number EN2217A PNP/NPN Epitaxial Planar Silicon Transistor 2SA1450/2SC3708 Low-Frequency Driver Applications Features Package Dimensions Adoption of FBET process. unit mm AF amp, AF power amp. 2003A High breakdown voltage VCEO>80V [2SA1450/2SC3708] JEDEC TO-92 B Base ( ) 2SA1450 EIAJ SC-43 C Collector SANYO NP E Emitter Specifications Absolute

 8.4. Size:94K  sanyo
 2sc3705.pdf

Ordering number EN2146B NPN Epitaxial Planar Silicon Darlington Transistor 2SC3705 Printer Driver Applications Applications Package Dimensions Switching of L load (motor drivers, printer drivers, unit mm relay drivers). 2009B [2SC3705] Features High DC current gain. Large current capacityu and wide ASO. Contains a Zener diode across collector and base. 1 Emitter

 8.5. Size:42K  panasonic
 2sc3707 e.pdf

Transistor 2SC3707 Silicon NPN epitaxial planer type For UHF amplification Unit mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features Possible with the small current and low voltage. High transition frequency fT. 1 Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine packing. 2 Absolute Max

 8.6. Size:38K  panasonic
 2sc3707.pdf

Transistor 2SC3707 Silicon NPN epitaxial planer type For UHF amplification Unit mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features Possible with the small current and low voltage. High transition frequency fT. 1 Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine packing. 2 Absolute Max

 8.7. Size:41K  panasonic
 2sc3704 e.pdf

Transistor 2SC3704 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features Low noise figure NF. High gain. 1 High transition frequency fT. 3 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 2 packing. Absolute Maxi

 8.8. Size:37K  panasonic
 2sc3704.pdf

Transistor 2SC3704 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features Low noise figure NF. High gain. 1 High transition frequency fT. 3 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 2 packing. Absolute Maxi

 8.9. Size:923K  kexin
 2sc3707.pdf

SMD Type Transistors NPN Transistors 2SC3707 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=10mA Collector Emitter Voltage VCEO=7V 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 10 Collecto

 8.10. Size:927K  kexin
 2sc3704.pdf

SMD Type Transistors NPN Transistors 2SC3704 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=80mA Collector Emitter Voltage VCEO=10V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collec

 8.11. Size:222K  inchange semiconductor
 2sc3709a.pdf

isc Silicon NPN Power Transistor 2SC3709A DESCRIPTION Low Collector Saturation Voltage- V = 0.4V(Max)@I = 6A CE(sat) C Good Linearity of h FE Complement to Type 2SA1451A APPLICATIONS Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 50 V CEO V

 8.12. Size:205K  inchange semiconductor
 2sc3709.pdf

isc Silicon NPN Power Transistor 2SC3709 DESCRIPTION Low Collector Saturation Voltage- V = 0.4V(Max)@I = 6A CE(sat) C Good Linearity of h FE Complement to Type 2SA1451 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU