2N206 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N206
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.075 W
Tensión colector-base (Vcb): 12 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 12 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 85 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 0.3 MHz
Capacitancia de salida (Cc): 70 pF
Ganancia de corriente contínua (hfe): 45
Paquete / Cubierta: TO1
- Selección de transistores por parámetros
2N206 Datasheet (PDF)
2n2060m.pdf

2N2060Mwww.centralsemi.comSILICONDESCRIPTION:DUAL NPN TRANSISTORThe CENTRAL SEMICONDUCTOR 2N2060M is a silicondual NPN transistor utilizing two individual chips mountedin a hermetically sealed metal case designed for differential amplifier applications.MARKING: FULL PART NUMBERTO-78 CASEMAXIMUM RATINGS: (TA=25C unless otherwise noted) SYMBOL UNITSCollector-Base Volt
2n2060adcsm.pdf

2N2060ADCSMDimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar PNP Devices. A0.236 5rad. (0.009) V = 80V CEO6.22 0.13 A = 1.27 0.13I = 0.5A C(0.
2n2060.pdf

TECHNICAL DATA UNITIZED DUAL NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/270 Devices Qualified Level JAN 2N2060 JANTX 2N2060L JANTXV MAXIMUM RATINGS Ratings Symbol 2N2060 Unit Collector-Emitter Voltage 60 Vdc VCEO Collector-Base Voltage 100 Vdc VCBO Emitter-Base Voltage 7.0 Vdc VEBO Collector Current 500 mAdc IC One Both Section Sections Total
Otros transistores... 2N2042A , 2N2043 , 2N2043A , 2N2048 , 2N2048A , 2N2049 , 2N205 , 2N2059 , 2N3904 , 2N2060 , 2N2060A , 2N2060B , 2N2060DCSM , 2N2061 , 2N2061A , 2N2062 , 2N2062A .
History: BDX83C | BSS56 | 2SB1204
History: BDX83C | BSS56 | 2SB1204



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