2SC3715 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3715
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50 W
Tensión colector-base (Vcb): 1500 V
Tensión colector-emisor (Vce): 600 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: TO218
Búsqueda de reemplazo de transistor bipolar 2SC3715
2SC3715 Datasheet (PDF)
2sc3710.pdf
Power Transistors www.jmnic.com 2SC3710 Silicon NPN Transistors Features B C E With TO-220Fa package Complement to type 2SA1452 Hihg current switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 80 V VCEO Collector to emitter voltage 80 V VEBO Emitter to base voltage 6 V IB Base current 2 A IC Colle
2sc3710o 2sc3710y.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3710DESCRIPTIONLow Collector Saturation Voltage-: V = 0.4V(Max)@I = 6ACE(sat) CGood Linearity of hFEHigh Switching SpeedComplement to Type 2SA1452APPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volta
2sc3719.pdf
isc Silicon NPN Power Transistor 2SC3719DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V (Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching and horizontal deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(T =2
2sc3710.pdf
isc Silicon NPN Power Transistor 2SC3710DESCRIPTIONLow Collector Saturation Voltage-: V = 0.4V(Max)@I = 6ACE(sat) CGood Linearity of hFEHigh Switching SpeedComplement to Type 2SA1452Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
2sc3710a.pdf
isc Silicon NPN Power Transistor 2SC3710ADESCRIPTIONLow Collector Saturation Voltage-: V = 0.4V(Max)@I = 6ACE(sat) CGood Linearity of hFEComplement to Type 2SA1452AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA
2sc3714.pdf
isc Silicon NPN Power Transistor 2SC3714DESCRIPTIONHigh Switching SpeedHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBOV Collector-Emitter Voltage 400 VCEOV Emitter-Base
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: MMBT3906LP
History: MMBT3906LP
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050