2SC3724
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3724
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80
W
Tensión colector-base (Vcb): 450
V
Tensión colector-emisor (Vce): 400
V
Corriente del colector DC máxima (Ic): 10
A
Temperatura operativa máxima (Tj): 125
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 65
Paquete / Cubierta:
TO218
Búsqueda de reemplazo de transistor bipolar 2SC3724
2SC3724
Datasheet (PDF)
8.3. Size:70K isahaya
2sc3728.pdf 
ISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to persona
8.4. Size:416K jmnic
2sc3720.pdf
Product Specification Silicon NPN Power Transistor 2SC3720 DESCRIPTION High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V (Min) High Switching Speed Wide Area of Safe Operation APPLICATIONS Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER MAX UNITVCBO Collector-Base Volt
8.5. Size:151K jmnic
2sc3725.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3725 DESCRIPTION With TO-3PN package High voltage ,high speed switching High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1
8.6. Size:242K jmnic
2sc3723.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3723 DESCRIPTION With TO-220C package High voltage ,high speed switching High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAb
8.7. Size:196K inchange semiconductor
2sc3729.pdf
isc Silicon NPN Power Transistor 2SC3729DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collect
8.8. Size:207K inchange semiconductor
2sc3720.pdf
isc Silicon NPN Power Transistor 2SC3720DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V (Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching and horizontal deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(T =2
8.9. Size:198K inchange semiconductor
2sc3725.pdf
isc Silicon NPN Power Transistor 2SC3725DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI
8.10. Size:195K inchange semiconductor
2sc3723.pdf
isc Silicon NPN Power Transistor 2SC3723DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
