2SC372O Todos los transistores

 8.1. Size:229K  rohm
 2sc3722.pdf

 8.2. Size:46K  no
 2sc3725.pdf

 8.3. Size:46K  no
 2sc3724.pdf

 8.4. Size:70K  isahaya
 2sc3728.pdf

ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to persona

 8.5. Size:416K  jmnic
 2sc3720.pdf

Product Specification Silicon NPN Power Transistor 2SC3720 DESCRIPTION High Collector-Emitter Breakdown Voltage- V(BR)CEO= 800V (Min) High Switching Speed Wide Area of Safe Operation APPLICATIONS Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Volt

 8.6. Size:151K  jmnic
 2sc3725.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC3725 DESCRIPTION With TO-3PN package High voltage ,high speed switching High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1

 8.7. Size:242K  jmnic
 2sc3723.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC3723 DESCRIPTION With TO-220C package High voltage ,high speed switching High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Ab

 8.8. Size:196K  inchange semiconductor
 2sc3729.pdf

isc Silicon NPN Power Transistor 2SC3729 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collect

 8.9. Size:207K  inchange semiconductor
 2sc3720.pdf

isc Silicon NPN Power Transistor 2SC3720 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V (Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =2

 8.10. Size:198K  inchange semiconductor
 2sc3725.pdf

isc Silicon NPN Power Transistor 2SC3725 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXI

 8.11. Size:195K  inchange semiconductor
 2sc3723.pdf

isc Silicon NPN Power Transistor 2SC3723 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXI