2SC3730 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3730
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.18 W
Tensión colector-base (Vcb): 15 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 7500 MHz
Ganancia de corriente contínua (hFE): 30
Encapsulados: TO236
Búsqueda de reemplazo de 2SC3730
- Selecciónⓘ de transistores por parámetros
2SC3730 datasheet
8.3. Size:161K nec
2sc3736.pdf 
DATA SHEET SILICON TRANSISTOR 2SC3736 HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SC3736 is designed for power amplifier and high speed 4.5 0.1 switching applications. 1.6 0.2 1.5 0.1 FEATURES High speed, high voltage switching Low collector saturation voltage 2 Complementary to the
8.8. Size:1125K kexin
2sc3735.pdf
SMD Type Transistors NPN Transistors 2SC3735 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=200mA Collector Emitter Voltage VCEO=15V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collec
8.9. Size:1341K kexin
2sc3736.pdf
SMD Type Transistors NPN Transistors 2SC3736 1.70 0.1 Features High Speed,High Voltage Switching Low Collector Saturation Voltage Complementary to 2SA1463 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 45 V Emitter - Base V
8.10. Size:1621K kexin
2sc3734.pdf
SMD Type Transistors NPN Transistors 2SC3734 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High Speed tstg
8.11. Size:2345K kexin
2sc3739.pdf
SMD Type Transistors NPN Transistors 2SC3739 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features High Gain Bandwidth Product fT=200MHz(min) Complementary to 2SA1464 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector
8.12. Size:197K inchange semiconductor
2sc3738.pdf
isc Silicon NPN Power Transistor 2SC3738 DESCRIPTION High Voltage, High Speed Switching Wide Area of Safe Operation Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU
8.13. Size:195K inchange semiconductor
2sc3737.pdf
isc Silicon NPN Power Transistor 2SC3737 DESCRIPTION High Collector-Base Breakdown Voltage- V = 800V(Min) (BR)CBO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25
Otros transistores... 2SC3728, 2SC3729, 2SC372G, 2SC372GO, 2SC372GY, 2SC372O, 2SC372Y, 2SC373, TIP2955, 2SC3731, 2SC3732, 2SC3733, 2SC3734, 2SC3735, 2SC3736, 2SC3737, 2SC3738
