2SC3756 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3756
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 60 W
Tensión colector-base (Vcb): 1500 V
Tensión colector-emisor (Vce): 800 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de transistor bipolar 2SC3756
2SC3756 Datasheet (PDF)
2sc3756.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3756 DESCRIPTION With TO-3PML package High speed High breakdown voltage High reliability APPLICATIONS For TV horizontal deflection output applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings (Ta=2
2sc3751.pdf
Ordering number : ENN1970B2SC3751NPN Triple Diffused Planar Silicon Transistor2SC3751800V / 1.5A Switching Regulator ApplicationsFeaturesPackage Dimensions High breakdown voltage and high reliability.unit : mm Fast switching speed.2041A Wide ASO.[2SC3751] Adoption of MBIT process.4.5 Micaless package facilitating mounting. 10.02.83.22.41.61
2sc3750.pdf
Ordering number:EN1969ANPN Triple Diffused Planar Silicon Transistor2SC3750500V/5A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed.2041A Wide ASO.[2SC3750] Adoption of MBIT process. Micaless package facilitating mounting.1 : Base2 : Collector3 : EmitterSANYO : TO-2
2sc3752.pdf
Ordering number:EN1971ANPN Triple Diffused Planar Silicon Transistor2SC3752800V/3A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed.2041A Wide ASO.[2SC3752] Adoption of MBIT process. Micaless package facilitating mounting.1 : Base2 : Collector3 : EmitterSANYO : TO-2
2sc3757.pdf
Transistors2SC3757Silicon NPN epitaxial planer typeUnit: mm0.40+0.10For high speed switching 0.050.16+0.100.063 Features High-speed switching1 2 Low collector to emitter saturation voltage VCE(sat)(0.95) (0.95) Mini type package, allowing downsizing of the equipment and1.90.1automatic insertion through the tape packing and the magazine2.90+0.20
2sc3757 e.pdf
Transistor2SC3757Silicon NPN epitaxial planer typeFor high speed switchingUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesHigh-speed switching.Low collector to emitter saturation voltage VCE(sat).1Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazinepacking.2Allowing pai
2sc3757.pdf
SMD Type TransistorsNPN Transistors2SC3757SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=40V 1 2+0.050.95+0.1-0.1 0.1 -0.01 Complementary to 2SA17381.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector -
2sc3754.pdf
isc Silicon NPN Power Transistor 2SC3754DESCRIPTIONWide Area of Safe OperationHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P
2sc3751.pdf
isc Silicon NPN Power Transistor 2SC3751DESCRIPTIONHigh Breakdown Voltage and High ReliabilityHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volt
2sc3750.pdf
isc Silicon NPN Power Transistor 2SC3750DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 500V(Min.)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
2sc3752.pdf
isc Silicon NPN Power Transistor 2SC3752DESCRIPTIONHigh Breakdown Voltage and High ReliabilityHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volt
2sc3755.pdf
isc Silicon NPN Power Transistor 2SC3755DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of color TVreceivers and line operated switch-mode applicationsABSOLUTE MAXIMUM RATINGS(T =2
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
