2SC376 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3762DESCRIPTIONHigh Breakdown Voltage-: V = 150V (Min)CBOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high speed and powerSwitching applications.ABSOLUTE MAXIMUM R

2SC3709A TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3709A High-Current Switching Applications Unit: mm Low collector saturation voltage: V = 0.4 V (max) CE (sat) High-speed switching: tstg = 1.0 s (typ.) Complementary to 2SA1451A Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 60 VCollector-emitt

Ordering number:EN1951BNPN Epitaxial Planar Silicon Transistor2SC3778UHF Low-Noise Amplifier,Wide-Band Amplifier ApplicationsApplications Package Dimensions UHF low-noise amplifiers, wide-band amplifiers. unit:mm2004AFeatures [2SC3778] Small noise figure : NF=2.2dB typ (f=0.9GHz). High power gain : MAG=14dB typ (f=0.9GHz). High cutoff frequency : fT=5.0GHz typ.C

Ordering number:EN2089BPNP/NPN Epitaxial Planar Silicon Transistors2SA1477/2SC3787160V/140mA Switching ApplicationsApplications Package Dimensions Predrivers for 100W power amplifiers. unit:mm2042BFeatures [2SA1477/2SC3787] Adoption of FBET process. Excellent linearity of hFE. Small Cob. Plastic-convered heat sink facilitating high-densitymounting (TO-126M

Ordering number:EN2095ANPN Epitaxial Planar Silicon Transistor2SC3770UHF, VHF Oscillator Mixer,HF Amplifier ApplicationsApplications Package Dimensions UHF/VHF frequency converters, local oscillators, HFunit:mmamplifiers.2018A[2SC3770]Features High power gain : PG=15dB typ (f=0.4GHz). High cutoff frequency : fT=1.2GHz typ.C : CollectorB : BaseE : Emitter

Ordering number : ENN1970B2SC3751NPN Triple Diffused Planar Silicon Transistor2SC3751800V / 1.5A Switching Regulator ApplicationsFeaturesPackage Dimensions High breakdown voltage and high reliability.unit : mm Fast switching speed.2041A Wide ASO.[2SC3751] Adoption of MBIT process.4.5 Micaless package facilitating mounting. 10.02.83.22.41.61

Ordering number:EN1945BNPN Epitaxial Planar Silicon Transistor2SC3772UHF Oscillator, Mixer, Low-Noise Amplifier,Wide-Band Amplifier ApplicationsApplications Package Dimensions UHF frequency converters, local oscillators, low-unit:mmnoise amplifiers, wide-band amplifiers.2018A[2SC3772]Features Small noise figure : NF=2.5dB typ (f=0.9GHz). High power gain : MAG=12

Ordering number:EN1968ANPN Triple Diffused Planar Silicon Transistor2SC3749500V/3A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed.2041A Wide ASO.[2SC3749] Adoption of MBIT process. Micaless package facilitating mounting.1 : Base2 : Collector3 : EmitterSANYO : TO-2

Ordering number:EN1946BNPN Epitaxial Planar Silicon Transistor2SC3773UHF Oscillator, Mixer, Low-Noise Amplifier,Wide-Band Amplifier ApplicationsApplications Package Dimensions UHF frequency converters, local oscillators, low-unit:mmnoise amplifiers, wide-band amplifiers.2018A[2SC3773]Features Small noise figure : NF=3.0dB typ (f=0.9GHz). High power gain : MAG=12

Ordering number:EN2528APNP/NPN Epitaxial Planar Silicon Transistors2SA1476/2SC3782Ultrahigh-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Video output.unit:mm Color TV chroma output.2010C Wide-band amp.[2SA1476/2SC3782]Features High fT (fT typ=400MHz). High breakdown voltage (VCEO 200V). Small reverse transfer c

Ordering number:EN1972APNP/NPN Epitaxial Planar Silicon Transistors2SA1470/2SC374760V/7A High-Speed Switching ApplicationsApplications Package Dimensions Inductance, lamp drivers.unit:mm Inveters, conveters (strobes, flashes, FLT lighting2041circiuts).[2SA1470/2SC3747] Power amplifiers (high-power car stereos, motorcontrol). High-speed switching (switching

Ordering number:EN1973APNP/NPN Epitaxial Planar Silicon Transistors2SA1469/2SC374660V/5A High-Speed Switching ApplicationsApplications Package Dimensions Various inductance lamp drivers for electricalunit:mmequipment.2041 Inverters, converters (strobo, flash, fluorescent lamp[2SA1469/2SC3746]lighting circuit). Power amp (high power car stereo, motor controller).

Ordering number:EN2093PNP/NPN Epitaxial Planar Silicon Transistors2SA1479/2SC3789High-Definiton CRT DisplayVideo Output ApplicationsApplications Package Dimensions High-definition CRT display.unit:mm Color TV chroma output, high breakdown voltage2042Adrivers.[2SA1479/2SC3789]Features High breakdown voltage (VCEO 300V). Excellent high frequency characte

Ordering number:EN1969ANPN Triple Diffused Planar Silicon Transistor2SC3750500V/5A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed.2041A Wide ASO.[2SC3750] Adoption of MBIT process. Micaless package facilitating mounting.1 : Base2 : Collector3 : EmitterSANYO : TO-2

Ordering number:EN1971ANPN Triple Diffused Planar Silicon Transistor2SC3752800V/3A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed.2041A Wide ASO.[2SC3752] Adoption of MBIT process. Micaless package facilitating mounting.1 : Base2 : Collector3 : EmitterSANYO : TO-2

Ordering number:EN2001APNP/NPN Epitaxial Planar Silicon Transistors2SA1471/2SC374860V/10A High-Speed Switching ApplicationsApplications Package Dimensions Car-use inductance drivers, lamp drivers.unit:mm Inverters drivers, conveters (strobes, flashes, FLT2041lighting circuits).[2SA1471/2SC3748] Power amplifiers (high-power car stereos, motorcontrol). High-s

Ordering number:EN2253APNP/NPN Epitaxial Planar Silicon Transistors2SA1478/2SC3788High-Definition CRT DisplayVideo Output ApplicationsFeatures Package Dimensions High breakdown voltage : VCEO 200V.unit:mm Small reverse transfer capacitance and excellent high2042Afrequency cahaceteristic[2SA1478/2SC3788]: Cre=1.2pF (NPN), 1.7pF (PNP). Adoption of FBET proces

Ordering number:EN1948BNPN Epitaxial Planar Silicon Transistor2SC3775UHF Low-Noise Amplifier,Wide-Band Amplifier ApplicationsApplications Package Dimensions UHF low-noise amplifiers, wide-band amplifiers. unit:mm2018AFeatures [2SC3775] Small noise figure : NF=1.5dB typ (f=0.9GHz). High power gain : MAG=14dB typ (f=0.9GHz). High cutoff frequency : fT=5.0GHz typ.C

Ordering number:EN1944BNPN Epitaxial Planar Silicon Transistor2SC3771UHF, VHF Oscillator Mixer,HF Amplifier ApplicationsApplications Package Dimensions UHF/VHF frequency converters, local oscillators, HFunit:mmamplifiers.2018A[2SC3771]Features High power gain : PG=10dB typ (f=0.9GHz).PG=16dB typ (f=0.4GHz). Small noise figure : NF=3.5dB typ (f=0.9GHz).

Ordering number:EN1950BNPN Epitaxial Planar Silicon Transistor2SC3777UHF Oscillator, Mixer, Low-Noise Amplifier,Wide-Band Amplifier ApplicationsApplications Package Dimensions UHF frequency converters, local oscillators, low-unit:mmnoise amplifiers, wide-band amplifiers.2004A[2SC3777]Features Small noise figure : NF=3.0dB typ (f=0.9GHz). High power gain : MAG=12

Ordering number:EN2217APNP/NPN Epitaxial Planar Silicon Transistor2SA1450/2SC3708Low-Frequency Driver ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm AF amp, AF power amp.2003A High breakdown voltage : VCEO>80V[2SA1450/2SC3708]JEDEC : TO-92 B : Base( ) : 2SA1450 EIAJ : SC-43 C : CollectorSANYO : NP E : EmitterSpecificationsAbsolute

Ordering number:EN2526PNP/NPN Epitaxial Planar Silicon Transistors2SA1474/2SC3780Ultrahigh-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Video Output.unit:mm Color TV chroma output.2010C Wide-band amp.[2SA1474/2SC3780]Features High fT (fT typ=800MHz). Small reverse transfer capacitance and excellent highfrequency char

Ordering number:EN2146BNPN Epitaxial Planar Silicon Darlington Transistor2SC3705Printer Driver ApplicationsApplications Package Dimensions Switching of L load (motor drivers, printer drivers,unit:mmrelay drivers).2009B[2SC3705]Features High DC current gain. Large current capacityu and wide ASO. Contains a Zener diode across collector and base.1 : Emitter

Ordering number:EN1949BNPN Epitaxial Planar Silicon Transistor2SC3776UHF Oscillator, Mixer, Low-Noise Amplifier,Wide-Band Amplifier ApplicationsApplications Package Dimensions UHF frequency converters, local oscillators, low-unit:mmnoise amplifiers, wide-band amplifiers.2004A[2SC3776]Features Small noise figure : NF=2.5dB typ (f=0.9GHz). High power gain : MAG=12

Ordering number:EN2254PNP/NPN Epitaxial Planar Silicon Transistors2SA1480/2SC3790High-Definiton CRT DisplayVideo Output ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO 300V).unit:mm Small reverse transfer capacitance and excellent high2042Afrequency characteristic[2SA1480/2SC3790]: Cre=1.8pF (NPN), 2.3pF (PNP). Adoption of MBIT process.

Ordering number:EN1947BNPN Epitaxial Planar Silicon Transistor2SC3774UHF Low-Noise Amplifier,Wide-Band Amplifier ApplicationsApplications Package Dimensions UHF low-noise amplifiers, wide-band amplifiers. unit:mm2018AFeatures [2SC3774] Small noise figure : NF=2.2dB typ (f=0.9GHz). High power gain : MAG=14dB typ (f=0.9GHz). High cutoff frequency : fT=5.0GHz typ.C

Ordering number:EN2527APNP/NPN Epitaxial Planar Silicon Transistors2SA1475/2SC3781Ultrahigh-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Video output.unit:mm Color TV chroma output.2010C Wide-band amp.[2SA1475/2SC3781]Features High fT (fT typ=500MHz). High breakdown voltage (VCEO 120V). Small reverse transfer c

DATA SHEETSILICON TRANSISTOR2SC3736HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SC3736 is designed for power amplifier and high speed 4.5 0.1switching applications. 1.6 0.2 1.5 0.1FEATURES High speed, high voltage switching Low collector saturation voltage 2 Complementary to the

Transistors2SC3757Silicon NPN epitaxial planer typeUnit: mm0.40+0.10For high speed switching 0.050.16+0.100.063 Features High-speed switching1 2 Low collector to emitter saturation voltage VCE(sat)(0.95) (0.95) Mini type package, allowing downsizing of the equipment and1.90.1automatic insertion through the tape packing and the magazine2.90+0.20

Transistor2SC3757Silicon NPN epitaxial planer typeFor high speed switchingUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesHigh-speed switching.Low collector to emitter saturation voltage VCE(sat).1Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazinepacking.2Allowing pai

Transistor2SC3707Silicon NPN epitaxial planer typeFor UHF amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesPossible with the small current and low voltage.High transition frequency fT.1Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazinepacking.2Absolute Max

Power Transistors2SC3795, 2SC3795ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingFeaturesHigh-speed switchingUnit: mm High collector to base voltage VCBO10.0 0.2 4.2 0.2Low collector to emitter saturation voltage VCE(sat)5.5 0.2 2.7 0.2Full-pack package which can be installed to the heat sink withone screwAbsolute Maximum

Transistor2SC3707Silicon NPN epitaxial planer typeFor UHF amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesPossible with the small current and low voltage.High transition frequency fT.1Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazinepacking.2Absolute Max

Power Transistors2SC3743Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesHigh-speed switching 3.1 0.1Wide area of safe operation (ASO) with high breakdown voltageSatisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed to the heat si

Transistor2SC3704Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesLow noise figure NF.High gain.1High transition frequency fT.3Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine2packing.Absolute Maxi

Transistor2SC3704Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesLow noise figure NF.High gain.1High transition frequency fT.3Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine2packing.Absolute Maxi

2SC3793Silicon NPN EpitaxialApplicationUHF local oscillatorOutlineMPAK311. Emitter2. Base23. Collector2SC3793Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 20 VCollector to emitter voltage VCEO 15 VEmitter to base voltage VEBO 3VCollector current IC 50 mACollector power dissipation PC 150 mWJunction temperatur

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Power Transistors www.jmnic.com 2SC3710 Silicon NPN Transistors Features B C E With TO-220Fa package Complement to type 2SA1452 Hihg current switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 80 V VCEO Collector to emitter voltage 80 V VEBO Emitter to base voltage 6 V IB Base current 2 A IC Colle

Product Specification Silicon NPN Power Transistor 2SC3720 DESCRIPTION High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V (Min) High Switching Speed Wide Area of Safe Operation APPLICATIONS Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER MAX UNITVCBO Collector-Base Volt

JMnic Product Specification Silicon NPN Power Transistors 2SC3725 DESCRIPTION With TO-3PN package High voltage ,high speed switching High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1

JMnic Product Specification Silicon NPN Power Transistors 2SC3746 DESCRIPTION With TO-220F package Complement to type 2SA1469 Low saturation voltage Excellent current dependence of hFE Short switching time APPLICATIONS Various inductance of lamp drivers for electronic equipment Inverters ,converters Switching regulator ,driver PINNING PIN DESCRIPTION

JMnic Product Specification Silicon NPN Power Transistors 2SC3723 DESCRIPTION With TO-220C package High voltage ,high speed switching High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAb

SMD Type TransistorsNPN Transistors2SC3757SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=40V 1 2+0.050.95+0.1-0.1 0.1 -0.01 Complementary to 2SA17381.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector -

SMD Type TransistorsNPN Transistors2SC3770SOT-23Unit: mm2.9+0.1-0.1+0.10.4 -0.13 Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=20V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Colle

SMD Type TransistorsNPN Transistors2SC3772SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=70mA1 2 Collector Emitter Voltage VCEO=16V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collec

SMD Type TransistorsNPN Transistors2SC3735SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=200mA Collector Emitter Voltage VCEO=15V 1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collec

SMD Type TransistorsNPN Transistors2SC3707SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=10mA Collector Emitter Voltage VCEO=7V1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 10 Collecto

SMD Type TransistorsNPN Transistors2SC3773SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=16V 1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collec

SMD Type TransistorsNPN Transistors2SC37361.70 0.1 Features High Speed,High Voltage Switching Low Collector Saturation Voltage Complementary to 2SA14630.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 45 V Emitter - Base V

SMD Type TransistorsNPN Transistors2SC3775SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=100mA1 2 Collector Emitter Voltage VCEO=12V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec

SMD Type TransistorsNPN Transistors2SC3771SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=30mA1 2 Collector Emitter Voltage VCEO=20V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Colle

SMD Type TransistorsNPN Transistors2SC3734SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features High Speed: tstg

SMD Type TransistorsNPN Transistors2SC3704SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=80mA Collector Emitter Voltage VCEO=10V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collec

SMD Type TransistorsNPN Transistors2SC3793SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=15V1 2+0.1+0.050.95-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collect

SMD Type TransistorsNPN Transistors2SC3774SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=70mA1 2 Collector Emitter Voltage VCEO=12V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Colle

SMD Type TransistorsNPN Transistors2SC3739SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features High Gain Bandwidth Product:fT=200MHz(min) Complementary to 2SA14641 2+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector

2SC3788(3DA3788) NPN /SILICON NPN TRANSISTOR : CRT Purpose: High-definition CRT display video output applications. , 2SA1478(3CA1478) Features: High breakdown voltage, small reverse transfer capacitance and excellent high frequenc

2SC3790(3DA3790) NPN /SILICON NPN TRANSISTOR : Purpose: High-definition CRT display video output applications. : Features: High breakdown voltage, small reverse transfer capacitance and excellent high frequency characteristic. /Absolu

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3710DESCRIPTIONLow Collector Saturation Voltage-: V = 0.4V(Max)@I = 6ACE(sat) CGood Linearity of hFEHigh Switching SpeedComplement to Type 2SA1452APPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volta

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3790DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOComplement to Type 2SA1480100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-definition CRT display and video outputapplications.ABSOLUTE MAXIMU

isc Silicon NPN Power Transistor 2SC3747DESCRIPTIONGood Linearity of hFEHigh Switching SpeedLow Collector Saturation VoltageComplement to Type 2SA1470Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSInductance, lamp driversInverters, convertersPower amplifiersHigh-speed switching applications.ABSOLUTE MAXI

isc Silicon NPN Power Transistor 2SC3754DESCRIPTIONWide Area of Safe OperationHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

isc Silicon NPN Power Transistor 2SC3719DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V (Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching and horizontal deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(T =2

isc Silicon NPN Power Transistor 2SC3751DESCRIPTIONHigh Breakdown Voltage and High ReliabilityHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volt

isc Silicon NPN Power Transistor 2SC3749DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 500V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

isc Silicon NPN Power Transistor 2SC3795DESCRIPTION Collector-Base Breakdown Voltage-: V = 800V(Min.)(BR)CBOLow Collector Saturation VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE

isc Silicon NPN Power Transistor 2SC3709ADESCRIPTIONLow Collector Saturation Voltage-: V = 0.4V(Max)@I = 6ACE(sat) CGood Linearity of hFEComplement to Type 2SA1451AAPPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBOV Collector-Emitter Voltage 50 VCEOV

isc Silicon NPN Power Transistor 2SC3729DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collect

isc Silicon NPN Power Transistor 2SC3710DESCRIPTIONLow Collector Saturation Voltage-: V = 0.4V(Max)@I = 6ACE(sat) CGood Linearity of hFEHigh Switching SpeedComplement to Type 2SA1452Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon NPN Power Transistor 2SC3743DESCRIPTION Collector-Emiiter Breakdown Voltage-: V = 800V(Min.)(BR)CEOWide Area of Safe OperationHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UN

isc Silicon NPN Power Transistor 2SC3709DESCRIPTIONLow Collector Saturation Voltage-: V = 0.4V(Max)@I = 6ACE(sat) CGood Linearity of hFEComplement to Type 2SA1451Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

isc Silicon NPN Power Transistor 2SC3720DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V (Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching and horizontal deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(T =2

isc Silicon NPN Power Transistor 2SC3798DESCRIPTION Collector-Base Breakdown Voltage-: V = 800V(Min.)(BR)CBOLow Collector Saturation VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3795 2SC3795A DESCRIPTION With TO-220Fa package High breakdown voltage High speed switching Low collector saturation voltage APPLICATIONS For high breakdown voltate ,high-speed switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) an

isc Silicon NPN Power Transistor 2SC3799DESCRIPTION Collector-Base Breakdown Voltage-: V = 800V(Min.)(BR)CBOLow Collector Saturation VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE

isc Silicon NPN Power Transistor 2SC3750DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 500V(Min.)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

isc Silicon NPN Power Transistor 2SC3725DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3794 2SC3794A DESCRIPTION With TO-220Fa package High VCBO High speed switching Low collector saturation voltage APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol3 Emitter Absolute maximum

isc Silicon NPN Power Transistor 2SC3752DESCRIPTIONHigh Breakdown Voltage and High ReliabilityHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volt

isc Silicon NPN Power Transistor 2SC3738DESCRIPTIONHigh Voltage, High Speed SwitchingWide Area of Safe OperationGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching and horizontal deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3756 DESCRIPTION With TO-3PML package High speed High breakdown voltage High reliability APPLICATIONS For TV horizontal deflection output applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings (Ta=2

isc Silicon NPN Power Transistor 2SC3797DESCRIPTION Collector-Base Breakdown Voltage-: V = 800V(Min.)(BR)CBOLow Collector Saturation VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE

isc Silicon NPN Power Transistor 2SC3794DESCRIPTION Collector-Base Breakdown Voltage-: V = 800V(Min.)(BR)CBOLow Collector Saturation VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE

isc Silicon NPN Power Transistor 2SC3796DESCRIPTION Collector-Base Breakdown Voltage-: V = 800V(Min.)(BR)CBOLow Collector Saturation VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE

isc Silicon NPN Power Transistor 2SC3746DESCRIPTIONGood Linearity of hFEHigh Switching SpeedLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVarious inductance lamp drivers for electrical equipmentInverters, convertersPower amplifiersHigh-speed switching applications.ABSOLUTE MA

isc Silicon NPN Power Transistor 2SC3795BDESCRIPTION Collector-Base Breakdown Voltage-: V = 1000V(Min.)(BR)CBOLow Collector Saturation VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALU

isc Silicon NPN Power Transistor 2SC3723DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI

isc Silicon NPN Power Transistor 2SC3710ADESCRIPTIONLow Collector Saturation Voltage-: V = 0.4V(Max)@I = 6ACE(sat) CGood Linearity of hFEComplement to Type 2SA1452AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

isc Silicon NPN Power Transistor 2SC3755DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of color TVreceivers and line operated switch-mode applicationsABSOLUTE MAXIMUM RATINGS(T =2

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3794 2SC3794A DESCRIPTION With TO-220Fa package High VCBO High speed switching Low collector saturation voltage APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute maximum r

isc Silicon NPN Power Transistor 2SC3737DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 800V(Min)(BR)CBOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching and horizontal deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(T =25

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC3793DESCRIPTIONLow NoiseHigh Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in UHF local oscillator.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 20 VCBOV Collector-Emitter

isc Silicon NPN Power Transistor 2SC3714DESCRIPTIONHigh Switching SpeedHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBOV Collector-Emitter Voltage 400 VCEOV Emitter-Base

isc Silicon NPN Power Transistor 2SC3748DESCRIPTIONGood Linearity of hFEHigh Switching SpeedLow Collector Saturation VoltageComplement to Type 2SA1471Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSInductance, lamp driversInverters, convertersPower amplifiersHigh-speed switching applications.ABSOLUTE MAXI

isc Silicon NPN Power Transistor 2SC3783DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed and high voltage switching applications.Switching regulator applications.High speed DC-DC converter applications.ABSOLUTE M