2SC376 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC376 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 70 V
Tensión colector-emisor (Vce): 35 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 75 MHz
Capacitancia de salida (Cc): 5 pF
Ganancia de corriente contínua (hFE): 60
Encapsulados: TO92
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2SC376 datasheet
2sc3762.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3762 DESCRIPTION High Breakdown Voltage- V = 150V (Min) CBO High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high speed and power Switching applications. ABSOLUTE MAXIMUM R
2sc3709a.pdf
2SC3709A TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3709A High-Current Switching Applications Unit mm Low collector saturation voltage V = 0.4 V (max) CE (sat) High-speed switching tstg = 1.0 s (typ.) Complementary to 2SA1451A Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitt
2sc3778.pdf
Ordering number EN1951B NPN Epitaxial Planar Silicon Transistor 2SC3778 UHF Low-Noise Amplifier, Wide-Band Amplifier Applications Applications Package Dimensions UHF low-noise amplifiers, wide-band amplifiers. unit mm 2004A Features [2SC3778] Small noise figure NF=2.2dB typ (f=0.9GHz). High power gain MAG=14dB typ (f=0.9GHz). High cutoff frequency fT=5.0GHz typ. C
2sa1477 2sc3787.pdf
Ordering number EN2089B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1477/2SC3787 160V/140mA Switching Applications Applications Package Dimensions Predrivers for 100W power amplifiers. unit mm 2042B Features [2SA1477/2SC3787] Adoption of FBET process. Excellent linearity of hFE. Small Cob. Plastic-convered heat sink facilitating high-density mounting (TO-126M
2sc3770.pdf
Ordering number EN2095A NPN Epitaxial Planar Silicon Transistor 2SC3770 UHF, VHF Oscillator Mixer, HF Amplifier Applications Applications Package Dimensions UHF/VHF frequency converters, local oscillators, HF unit mm amplifiers. 2018A [2SC3770] Features High power gain PG=15dB typ (f=0.4GHz). High cutoff frequency fT=1.2GHz typ. C Collector B Base E Emitter
2sc3751.pdf
Ordering number ENN1970B 2SC3751 NPN Triple Diffused Planar Silicon Transistor 2SC3751 800V / 1.5A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed. 2041A Wide ASO. [2SC3751] Adoption of MBIT process. 4.5 Micaless package facilitating mounting. 10.0 2.8 3.2 2.4 1.6 1
2sc3772.pdf
Ordering number EN1945B NPN Epitaxial Planar Silicon Transistor 2SC3772 UHF Oscillator, Mixer, Low-Noise Amplifier, Wide-Band Amplifier Applications Applications Package Dimensions UHF frequency converters, local oscillators, low- unit mm noise amplifiers, wide-band amplifiers. 2018A [2SC3772] Features Small noise figure NF=2.5dB typ (f=0.9GHz). High power gain MAG=12
2sc3749.pdf
Ordering number EN1968A NPN Triple Diffused Planar Silicon Transistor 2SC3749 500V/3A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed. 2041A Wide ASO. [2SC3749] Adoption of MBIT process. Micaless package facilitating mounting. 1 Base 2 Collector 3 Emitter SANYO TO-2
2sc3773.pdf
Ordering number EN1946B NPN Epitaxial Planar Silicon Transistor 2SC3773 UHF Oscillator, Mixer, Low-Noise Amplifier, Wide-Band Amplifier Applications Applications Package Dimensions UHF frequency converters, local oscillators, low- unit mm noise amplifiers, wide-band amplifiers. 2018A [2SC3773] Features Small noise figure NF=3.0dB typ (f=0.9GHz). High power gain MAG=12
2sc3782.pdf
Ordering number EN2528A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1476/2SC3782 Ultrahigh-Definition CRT Display Video Output Applications Applications Package Dimensions Video output. unit mm Color TV chroma output. 2010C Wide-band amp. [2SA1476/2SC3782] Features High fT (fT typ=400MHz). High breakdown voltage (VCEO 200V). Small reverse transfer c
2sa1470 2sc3747.pdf
Ordering number EN1972A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1470/2SC3747 60V/7A High-Speed Switching Applications Applications Package Dimensions Inductance, lamp drivers. unit mm Inveters, conveters (strobes, flashes, FLT lighting 2041 circiuts). [2SA1470/2SC3747] Power amplifiers (high-power car stereos, motor control). High-speed switching (switching
2sa1469 2sc3746.pdf
Ordering number EN1973A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1469/2SC3746 60V/5A High-Speed Switching Applications Applications Package Dimensions Various inductance lamp drivers for electrical unit mm equipment. 2041 Inverters, converters (strobo, flash, fluorescent lamp [2SA1469/2SC3746] lighting circuit). Power amp (high power car stereo, motor controller).
2sa1479 2sc3789.pdf
Ordering number EN2093 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1479/2SC3789 High-Definiton CRT Display Video Output Applications Applications Package Dimensions High-definition CRT display. unit mm Color TV chroma output, high breakdown voltage 2042A drivers. [2SA1479/2SC3789] Features High breakdown voltage (VCEO 300V). Excellent high frequency characte
2sc3750.pdf
Ordering number EN1969A NPN Triple Diffused Planar Silicon Transistor 2SC3750 500V/5A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed. 2041A Wide ASO. [2SC3750] Adoption of MBIT process. Micaless package facilitating mounting. 1 Base 2 Collector 3 Emitter SANYO TO-2
2sc3752.pdf
Ordering number EN1971A NPN Triple Diffused Planar Silicon Transistor 2SC3752 800V/3A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed. 2041A Wide ASO. [2SC3752] Adoption of MBIT process. Micaless package facilitating mounting. 1 Base 2 Collector 3 Emitter SANYO TO-2
2sa1471 2sc3748.pdf
Ordering number EN2001A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1471/2SC3748 60V/10A High-Speed Switching Applications Applications Package Dimensions Car-use inductance drivers, lamp drivers. unit mm Inverters drivers, conveters (strobes, flashes, FLT 2041 lighting circuits). [2SA1471/2SC3748] Power amplifiers (high-power car stereos, motor control). High-s
2sa1478 2sc3788.pdf
Ordering number EN2253A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1478/2SC3788 High-Definition CRT Display Video Output Applications Features Package Dimensions High breakdown voltage VCEO 200V. unit mm Small reverse transfer capacitance and excellent high 2042A frequency cahaceteristic [2SA1478/2SC3788] Cre=1.2pF (NPN), 1.7pF (PNP). Adoption of FBET proces
2sc3775.pdf
Ordering number EN1948B NPN Epitaxial Planar Silicon Transistor 2SC3775 UHF Low-Noise Amplifier, Wide-Band Amplifier Applications Applications Package Dimensions UHF low-noise amplifiers, wide-band amplifiers. unit mm 2018A Features [2SC3775] Small noise figure NF=1.5dB typ (f=0.9GHz). High power gain MAG=14dB typ (f=0.9GHz). High cutoff frequency fT=5.0GHz typ. C
2sc3771.pdf
Ordering number EN1944B NPN Epitaxial Planar Silicon Transistor 2SC3771 UHF, VHF Oscillator Mixer, HF Amplifier Applications Applications Package Dimensions UHF/VHF frequency converters, local oscillators, HF unit mm amplifiers. 2018A [2SC3771] Features High power gain PG=10dB typ (f=0.9GHz). PG=16dB typ (f=0.4GHz). Small noise figure NF=3.5dB typ (f=0.9GHz).
2sc3777.pdf
Ordering number EN1950B NPN Epitaxial Planar Silicon Transistor 2SC3777 UHF Oscillator, Mixer, Low-Noise Amplifier, Wide-Band Amplifier Applications Applications Package Dimensions UHF frequency converters, local oscillators, low- unit mm noise amplifiers, wide-band amplifiers. 2004A [2SC3777] Features Small noise figure NF=3.0dB typ (f=0.9GHz). High power gain MAG=12
2sa1450 2sc3708.pdf
Ordering number EN2217A PNP/NPN Epitaxial Planar Silicon Transistor 2SA1450/2SC3708 Low-Frequency Driver Applications Features Package Dimensions Adoption of FBET process. unit mm AF amp, AF power amp. 2003A High breakdown voltage VCEO>80V [2SA1450/2SC3708] JEDEC TO-92 B Base ( ) 2SA1450 EIAJ SC-43 C Collector SANYO NP E Emitter Specifications Absolute
2sc3780.pdf
Ordering number EN2526 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1474/2SC3780 Ultrahigh-Definition CRT Display Video Output Applications Applications Package Dimensions Video Output. unit mm Color TV chroma output. 2010C Wide-band amp. [2SA1474/2SC3780] Features High fT (fT typ=800MHz). Small reverse transfer capacitance and excellent high frequency char
2sc3705.pdf
Ordering number EN2146B NPN Epitaxial Planar Silicon Darlington Transistor 2SC3705 Printer Driver Applications Applications Package Dimensions Switching of L load (motor drivers, printer drivers, unit mm relay drivers). 2009B [2SC3705] Features High DC current gain. Large current capacityu and wide ASO. Contains a Zener diode across collector and base. 1 Emitter
2sc3776.pdf
Ordering number EN1949B NPN Epitaxial Planar Silicon Transistor 2SC3776 UHF Oscillator, Mixer, Low-Noise Amplifier, Wide-Band Amplifier Applications Applications Package Dimensions UHF frequency converters, local oscillators, low- unit mm noise amplifiers, wide-band amplifiers. 2004A [2SC3776] Features Small noise figure NF=2.5dB typ (f=0.9GHz). High power gain MAG=12
2sa1480 2sc3790.pdf
Ordering number EN2254 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1480/2SC3790 High-Definiton CRT Display Video Output Applications Features Package Dimensions High breakdown voltage (VCEO 300V). unit mm Small reverse transfer capacitance and excellent high 2042A frequency characteristic [2SA1480/2SC3790] Cre=1.8pF (NPN), 2.3pF (PNP). Adoption of MBIT process.
2sc3774.pdf
Ordering number EN1947B NPN Epitaxial Planar Silicon Transistor 2SC3774 UHF Low-Noise Amplifier, Wide-Band Amplifier Applications Applications Package Dimensions UHF low-noise amplifiers, wide-band amplifiers. unit mm 2018A Features [2SC3774] Small noise figure NF=2.2dB typ (f=0.9GHz). High power gain MAG=14dB typ (f=0.9GHz). High cutoff frequency fT=5.0GHz typ. C
2sc3781.pdf
Ordering number EN2527A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1475/2SC3781 Ultrahigh-Definition CRT Display Video Output Applications Applications Package Dimensions Video output. unit mm Color TV chroma output. 2010C Wide-band amp. [2SA1475/2SC3781] Features High fT (fT typ=500MHz). High breakdown voltage (VCEO 120V). Small reverse transfer c
2sc3736.pdf
DATA SHEET SILICON TRANSISTOR 2SC3736 HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SC3736 is designed for power amplifier and high speed 4.5 0.1 switching applications. 1.6 0.2 1.5 0.1 FEATURES High speed, high voltage switching Low collector saturation voltage 2 Complementary to the
2sc3757.pdf
Transistors 2SC3757 Silicon NPN epitaxial planer type Unit mm 0.40+0.10 For high speed switching 0.05 0.16+0.10 0.06 3 Features High-speed switching 1 2 Low collector to emitter saturation voltage VCE(sat) (0.95) (0.95) Mini type package, allowing downsizing of the equipment and 1.9 0.1 automatic insertion through the tape packing and the magazine 2.90+0.20
2sc3757 e.pdf
Transistor 2SC3757 Silicon NPN epitaxial planer type For high speed switching Unit mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High-speed switching. Low collector to emitter saturation voltage VCE(sat). 1 Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine packing. 2 Allowing pai
2sc3707 e.pdf
Transistor 2SC3707 Silicon NPN epitaxial planer type For UHF amplification Unit mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features Possible with the small current and low voltage. High transition frequency fT. 1 Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine packing. 2 Absolute Max
2sc3795.pdf
Power Transistors 2SC3795, 2SC3795A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Features High-speed switching Unit mm High collector to base voltage VCBO 10.0 0.2 4.2 0.2 Low collector to emitter saturation voltage VCE(sat) 5.5 0.2 2.7 0.2 Full-pack package which can be installed to the heat sink with one screw Absolute Maximum
2sc3707.pdf
Transistor 2SC3707 Silicon NPN epitaxial planer type For UHF amplification Unit mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features Possible with the small current and low voltage. High transition frequency fT. 1 Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine packing. 2 Absolute Max
2sc3743.pdf
Power Transistors 2SC3743 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High-speed switching 3.1 0.1 Wide area of safe operation (ASO) with high breakdown voltage Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat si
2sc3704 e.pdf
Transistor 2SC3704 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features Low noise figure NF. High gain. 1 High transition frequency fT. 3 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 2 packing. Absolute Maxi
2sc3704.pdf
Transistor 2SC3704 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features Low noise figure NF. High gain. 1 High transition frequency fT. 3 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 2 packing. Absolute Maxi
2sc3793.pdf
2SC3793 Silicon NPN Epitaxial Application UHF local oscillator Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC3793 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 15 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipation PC 150 mW Junction temperatur
2sc3728.pdf
ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to persona
2sc3710.pdf
Power Transistors www.jmnic.com 2SC3710 Silicon NPN Transistors Features B C E With TO-220Fa package Complement to type 2SA1452 Hihg current switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 80 V VCEO Collector to emitter voltage 80 V VEBO Emitter to base voltage 6 V IB Base current 2 A IC Colle
2sc3720.pdf
Product Specification Silicon NPN Power Transistor 2SC3720 DESCRIPTION High Collector-Emitter Breakdown Voltage- V(BR)CEO= 800V (Min) High Switching Speed Wide Area of Safe Operation APPLICATIONS Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Volt
2sc3725.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3725 DESCRIPTION With TO-3PN package High voltage ,high speed switching High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1
2sc3746.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3746 DESCRIPTION With TO-220F package Complement to type 2SA1469 Low saturation voltage Excellent current dependence of hFE Short switching time APPLICATIONS Various inductance of lamp drivers for electronic equipment Inverters ,converters Switching regulator ,driver PINNING PIN DESCRIPTION
2sc3723.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3723 DESCRIPTION With TO-220C package High voltage ,high speed switching High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Ab
2sc3757.pdf
SMD Type Transistors NPN Transistors 2SC3757 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=40V 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 Complementary to 2SA1738 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector -
2sc3770.pdf
SMD Type Transistors NPN Transistors 2SC3770 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=20V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Colle
2sc3772.pdf
SMD Type Transistors NPN Transistors 2SC3772 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=70mA 1 2 Collector Emitter Voltage VCEO=16V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collec
2sc3735.pdf
SMD Type Transistors NPN Transistors 2SC3735 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=200mA Collector Emitter Voltage VCEO=15V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collec
2sc3707.pdf
SMD Type Transistors NPN Transistors 2SC3707 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=10mA Collector Emitter Voltage VCEO=7V 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 10 Collecto
2sc3773.pdf
SMD Type Transistors NPN Transistors 2SC3773 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=16V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collec
2sc3736.pdf
SMD Type Transistors NPN Transistors 2SC3736 1.70 0.1 Features High Speed,High Voltage Switching Low Collector Saturation Voltage Complementary to 2SA1463 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 45 V Emitter - Base V
2sc3775.pdf
SMD Type Transistors NPN Transistors 2SC3775 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=100mA 1 2 Collector Emitter Voltage VCEO=12V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec
2sc3771.pdf
SMD Type Transistors NPN Transistors 2SC3771 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=30mA 1 2 Collector Emitter Voltage VCEO=20V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Colle
2sc3734.pdf
SMD Type Transistors NPN Transistors 2SC3734 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High Speed tstg
2sc3704.pdf
SMD Type Transistors NPN Transistors 2SC3704 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=80mA Collector Emitter Voltage VCEO=10V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collec
2sc3793.pdf
SMD Type Transistors NPN Transistors 2SC3793 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=15V 1 2 +0.1 +0.05 0.95-0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collect
2sc3774.pdf
SMD Type Transistors NPN Transistors 2SC3774 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=70mA 1 2 Collector Emitter Voltage VCEO=12V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Colle
2sc3739.pdf
SMD Type Transistors NPN Transistors 2SC3739 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features High Gain Bandwidth Product fT=200MHz(min) Complementary to 2SA1464 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector
2sc3788 3da3788.pdf
2SC3788(3DA3788) NPN /SILICON NPN TRANSISTOR CRT Purpose High-definition CRT display video output applications. , 2SA1478(3CA1478) Features High breakdown voltage, small reverse transfer capacitance and excellent high frequenc
2sc3790 3da3790.pdf
2SC3790(3DA3790) NPN /SILICON NPN TRANSISTOR Purpose High-definition CRT display video output applications. Features High breakdown voltage, small reverse transfer capacitance and excellent high frequency characteristic. /Absolu
2sc3710o 2sc3710y.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3710 DESCRIPTION Low Collector Saturation Voltage- V = 0.4V(Max)@I = 6A CE(sat) C Good Linearity of h FE High Switching Speed Complement to Type 2SA1452 APPLICATIONS Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volta
2sc3790.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3790 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Complement to Type 2SA1480 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-definition CRT display and video output applications. ABSOLUTE MAXIMU
2sc3747.pdf
isc Silicon NPN Power Transistor 2SC3747 DESCRIPTION Good Linearity of h FE High Switching Speed Low Collector Saturation Voltage Complement to Type 2SA1470 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Inductance, lamp drivers Inverters, converters Power amplifiers High-speed switching applications. ABSOLUTE MAXI
2sc3754.pdf
isc Silicon NPN Power Transistor 2SC3754 DESCRIPTION Wide Area of Safe Operation High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P
2sc3719.pdf
isc Silicon NPN Power Transistor 2SC3719 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V (Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =2
2sc3751.pdf
isc Silicon NPN Power Transistor 2SC3751 DESCRIPTION High Breakdown Voltage and High Reliability High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volt
2sc3749.pdf
isc Silicon NPN Power Transistor 2SC3749 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 500V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
2sc3795.pdf
isc Silicon NPN Power Transistor 2SC3795 DESCRIPTION Collector-Base Breakdown Voltage- V = 800V(Min.) (BR)CBO Low Collector Saturation Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE
2sc3709a.pdf
isc Silicon NPN Power Transistor 2SC3709A DESCRIPTION Low Collector Saturation Voltage- V = 0.4V(Max)@I = 6A CE(sat) C Good Linearity of h FE Complement to Type 2SA1451A APPLICATIONS Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 50 V CEO V
2sc3729.pdf
isc Silicon NPN Power Transistor 2SC3729 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collect
2sc3710.pdf
isc Silicon NPN Power Transistor 2SC3710 DESCRIPTION Low Collector Saturation Voltage- V = 0.4V(Max)@I = 6A CE(sat) C Good Linearity of h FE High Switching Speed Complement to Type 2SA1452 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )
2sc3743.pdf
isc Silicon NPN Power Transistor 2SC3743 DESCRIPTION Collector-Emiiter Breakdown Voltage- V = 800V(Min.) (BR)CEO Wide Area of Safe Operation High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UN
2sc3709.pdf
isc Silicon NPN Power Transistor 2SC3709 DESCRIPTION Low Collector Saturation Voltage- V = 0.4V(Max)@I = 6A CE(sat) C Good Linearity of h FE Complement to Type 2SA1451 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU
2sc3720.pdf
isc Silicon NPN Power Transistor 2SC3720 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V (Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =2
2sc3798.pdf
isc Silicon NPN Power Transistor 2SC3798 DESCRIPTION Collector-Base Breakdown Voltage- V = 800V(Min.) (BR)CBO Low Collector Saturation Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE
2sc3795 2sc3795a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3795 2SC3795A DESCRIPTION With TO-220Fa package High breakdown voltage High speed switching Low collector saturation voltage APPLICATIONS For high breakdown voltate ,high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) an
2sc3799.pdf
isc Silicon NPN Power Transistor 2SC3799 DESCRIPTION Collector-Base Breakdown Voltage- V = 800V(Min.) (BR)CBO Low Collector Saturation Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE
2sc3750.pdf
isc Silicon NPN Power Transistor 2SC3750 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 500V(Min.) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
2sc3725.pdf
isc Silicon NPN Power Transistor 2SC3725 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXI
2sc3794a.pdf
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3794 2SC3794A DESCRIPTION With TO-220Fa package High VCBO High speed switching Low collector saturation voltage APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum
2sc3752.pdf
isc Silicon NPN Power Transistor 2SC3752 DESCRIPTION High Breakdown Voltage and High Reliability High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volt
2sc3738.pdf
isc Silicon NPN Power Transistor 2SC3738 DESCRIPTION High Voltage, High Speed Switching Wide Area of Safe Operation Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU
2sc3756.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3756 DESCRIPTION With TO-3PML package High speed High breakdown voltage High reliability APPLICATIONS For TV horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings (Ta=2
2sc3797.pdf
isc Silicon NPN Power Transistor 2SC3797 DESCRIPTION Collector-Base Breakdown Voltage- V = 800V(Min.) (BR)CBO Low Collector Saturation Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE
2sc3794.pdf
isc Silicon NPN Power Transistor 2SC3794 DESCRIPTION Collector-Base Breakdown Voltage- V = 800V(Min.) (BR)CBO Low Collector Saturation Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE
2sc3796.pdf
isc Silicon NPN Power Transistor 2SC3796 DESCRIPTION Collector-Base Breakdown Voltage- V = 800V(Min.) (BR)CBO Low Collector Saturation Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE
2sc3746.pdf
isc Silicon NPN Power Transistor 2SC3746 DESCRIPTION Good Linearity of h FE High Switching Speed Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Various inductance lamp drivers for electrical equipment Inverters, converters Power amplifiers High-speed switching applications. ABSOLUTE MA
2sc3795b.pdf
isc Silicon NPN Power Transistor 2SC3795B DESCRIPTION Collector-Base Breakdown Voltage- V = 1000V(Min.) (BR)CBO Low Collector Saturation Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALU
2sc3723.pdf
isc Silicon NPN Power Transistor 2SC3723 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXI
2sc3710a.pdf
isc Silicon NPN Power Transistor 2SC3710A DESCRIPTION Low Collector Saturation Voltage- V = 0.4V(Max)@I = 6A CE(sat) C Good Linearity of h FE Complement to Type 2SA1452A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA
2sc3755.pdf
isc Silicon NPN Power Transistor 2SC3755 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers and line operated switch-mode applications ABSOLUTE MAXIMUM RATINGS(T =2
2sc3794 2sc3794a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3794 2SC3794A DESCRIPTION With TO-220Fa package High VCBO High speed switching Low collector saturation voltage APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum r
2sc3737.pdf
isc Silicon NPN Power Transistor 2SC3737 DESCRIPTION High Collector-Base Breakdown Voltage- V = 800V(Min) (BR)CBO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25
2sc3793.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3793 DESCRIPTION Low Noise High Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in UHF local oscillator. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 20 V CBO V Collector-Emitter
2sc3714.pdf
isc Silicon NPN Power Transistor 2SC3714 DESCRIPTION High Switching Speed High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 500 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base
2sc3748.pdf
isc Silicon NPN Power Transistor 2SC3748 DESCRIPTION Good Linearity of h FE High Switching Speed Low Collector Saturation Voltage Complement to Type 2SA1471 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Inductance, lamp drivers Inverters, converters Power amplifiers High-speed switching applications. ABSOLUTE MAXI
2sc3783.pdf
isc Silicon NPN Power Transistor 2SC3783 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed and high voltage switching applications. Switching regulator applications. High speed DC-DC converter applications. ABSOLUTE M
Otros transistores... 2SC3752M, 2SC3753, 2SC3754, 2SC3755, 2SC3756, 2SC3757, 2SC3758, 2SC3759, 2SD718, 2SC3760, 2SC3761, 2SC3762, 2SC3763, 2SC3764, 2SC3765, 2SC3766, 2SC3769
History: 2SC4114 | 2SC3762
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Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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