2SC3788C
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3788C
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 5
W
Tensión colector-base (Vcb): 200
V
Tensión colector-emisor (Vce): 200
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 125
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150
MHz
Capacitancia de salida (Cc): 1.2
pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: ISO126
Búsqueda de reemplazo de transistor bipolar 2SC3788C
2SC3788C
Datasheet (PDF)
7.1. Size:154K sanyo
2sa1478 2sc3788.pdf
Ordering number:EN2253APNP/NPN Epitaxial Planar Silicon Transistors2SA1478/2SC3788High-Definition CRT DisplayVideo Output ApplicationsFeatures Package Dimensions High breakdown voltage : VCEO 200V.unit:mm Small reverse transfer capacitance and excellent high2042Afrequency cahaceteristic[2SA1478/2SC3788]: Cre=1.2pF (NPN), 1.7pF (PNP). Adoption of FBET proces
7.2. Size:213K foshan
2sc3788 3da3788.pdf
2SC3788(3DA3788) NPN /SILICON NPN TRANSISTOR : CRT Purpose: High-definition CRT display video output applications. , 2SA1478(3CA1478) Features: High breakdown voltage, small reverse transfer capacitance and excellent high frequenc
8.2. Size:135K sanyo
2sa1477 2sc3787.pdf
Ordering number:EN2089BPNP/NPN Epitaxial Planar Silicon Transistors2SA1477/2SC3787160V/140mA Switching ApplicationsApplications Package Dimensions Predrivers for 100W power amplifiers. unit:mm2042BFeatures [2SA1477/2SC3787] Adoption of FBET process. Excellent linearity of hFE. Small Cob. Plastic-convered heat sink facilitating high-densitymounting (TO-126M
8.4. Size:114K sanyo
2sc3782.pdf
Ordering number:EN2528APNP/NPN Epitaxial Planar Silicon Transistors2SA1476/2SC3782Ultrahigh-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Video output.unit:mm Color TV chroma output.2010C Wide-band amp.[2SA1476/2SC3782]Features High fT (fT typ=400MHz). High breakdown voltage (VCEO 200V). Small reverse transfer c
8.5. Size:157K sanyo
2sa1479 2sc3789.pdf
Ordering number:EN2093PNP/NPN Epitaxial Planar Silicon Transistors2SA1479/2SC3789High-Definiton CRT DisplayVideo Output ApplicationsApplications Package Dimensions High-definition CRT display.unit:mm Color TV chroma output, high breakdown voltage2042Adrivers.[2SA1479/2SC3789]Features High breakdown voltage (VCEO 300V). Excellent high frequency characte
8.7. Size:125K sanyo
2sc3780.pdf
Ordering number:EN2526PNP/NPN Epitaxial Planar Silicon Transistors2SA1474/2SC3780Ultrahigh-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Video Output.unit:mm Color TV chroma output.2010C Wide-band amp.[2SA1474/2SC3780]Features High fT (fT typ=800MHz). Small reverse transfer capacitance and excellent highfrequency char
8.9. Size:128K sanyo
2sc3781.pdf
Ordering number:EN2527APNP/NPN Epitaxial Planar Silicon Transistors2SA1475/2SC3781Ultrahigh-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Video output.unit:mm Color TV chroma output.2010C Wide-band amp.[2SA1475/2SC3781]Features High fT (fT typ=500MHz). High breakdown voltage (VCEO 120V). Small reverse transfer c
8.10. Size:218K inchange semiconductor
2sc3783.pdf
isc Silicon NPN Power Transistor 2SC3783DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed and high voltage switching applications.Switching regulator applications.High speed DC-DC converter applications.ABSOLUTE M
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