2SC381 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC381
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150 MHz
Capacitancia de salida (Cc): 4 pF
Ganancia de corriente contínua (hfe): 90
Paquete / Cubierta: TO92
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2SC381 Datasheet (PDF)
2sc3810.pdf

DATA SHEETSILICON TRANSISTOR2SC3810NPN SILICON EPITAXIAL TRANSISTORFOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGSINDUSTRIAL USEFEATURES PACKAGE DIMENSIONS (in millimeters) The 2SC3810 is an NPN silicon epitaxial dual transistor having+0.35.0 MIN. 3.5-0.2 5.0 MIN.a large-gain-bandwidth product performance in a wide operating3 2current range. Dual chips i
2sc3811.pdf

Transistor2SC3811Silicon NPN epitaxial planer typeFor high speed switchingUnit: mm5.0 0.2 4.0 0.2FeaturesHigh-speed switching.Low collector to emitter saturation voltage VCE(sat).Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.2Collector to base voltage VCBO 40 V0.45 0.1 0.45 0.1Collector to emitter voltage VCES 40 V1.27 1.27Emit
2sc3811 e.pdf

Transistor2SC3811Silicon NPN epitaxial planer typeFor high speed switchingUnit: mm5.0 0.2 4.0 0.2FeaturesHigh-speed switching.Low collector to emitter saturation voltage VCE(sat).Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.2Collector to base voltage VCBO 40 V0.45 0.1 0.45 0.1Collector to emitter voltage VCES 40 V1.27 1.27Emit
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 3DD13005_B3 | FMA9A | BSW75
History: 3DD13005_B3 | FMA9A | BSW75



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