2N2068 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N2068  📄📄 

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 10 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 55 V

Tensión emisor-base (Veb): 20 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 90 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 0.07 MHz

Ganancia de corriente contínua (hFE): 20

Encapsulados: MM17

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2N2068 datasheet

 9.1. Size:319K  rca
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2N2068

 9.2. Size:429K  central
 2n2060m.pdf pdf_icon

2N2068

2N2060M www.centralsemi.com SILICON DESCRIPTION DUAL NPN TRANSISTOR The CENTRAL SEMICONDUCTOR 2N2060M is a silicon dual NPN transistor utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications. MARKING FULL PART NUMBER TO-78 CASE MAXIMUM RATINGS (TA=25 C unless otherwise noted) SYMBOL UNITS Collector-Base Volt

 9.3. Size:10K  semelab
 2n2060adcsm.pdf pdf_icon

2N2068

2N2060ADCSM Dimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) Applications 2 3 1 4 Dual Bipolar PNP Devices. A 0.23 6 5 rad. (0.009) V = 80V CEO 6.22 0.13 A = 1.27 0.13 I = 0.5A C (0.

 9.4. Size:53K  microsemi
 2n2060.pdf pdf_icon

2N2068

TECHNICAL DATA UNITIZED DUAL NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/270 Devices Qualified Level JAN 2N2060 JANTX 2N2060L JANTXV MAXIMUM RATINGS Ratings Symbol 2N2060 Unit Collector-Emitter Voltage 60 Vdc VCEO Collector-Base Voltage 100 Vdc VCBO Emitter-Base Voltage 7.0 Vdc VEBO Collector Current 500 mAdc IC One Both Section Sections Total

MOSTRAR MÁS

Otros transistores... 2N2065A, 2N2066, 2N2066A, 2N2067, 2N2067B, 2N2067G, 2N2067O, 2N2067W, 2SC2073, 2N2068G, 2N2068O, 2N2069, 2N207, 2N2070, 2N2071, 2N2072, 2N2075