2SC383 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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2SC5662 / 2SC4726 / 2SC4083 /Transistors 2SC3838K / 2SC4043SHigh-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz)2SC5662 / 2SC4726 / 2SC4083 /2SC3838K / 2SC4043S External dimensions (Units : mm) Features1) High transition frequency. (Typ. fT= 1.5GHz)2SC56621.20.2 0.8 0.22) Small rbbCc and high gain. (Typ. 4ps)(2)3) Small NF. (3)(1)(1) Base0.15Max.(2) E

High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Features Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC56612) Small rbbCc and high gain. (Typ. 6ps) 3) Small NF. (1) BasePackaging specifications and hFE ROHM : VMT3 (2) EmitterType 2SC5661 2SC4725 2SC4082 2SC3837K(3) CollectorPackage

2SC3838KDatasheetHigh-Frequency Amplifer Transistor (11V, 50mA, 3.2GHz)lOutlinel SOT-346 Parameter Value SC-59 VCEO11VIC50mASMT3 lFeatures lInner circuitl l1)High transition frequency.(Typ. fT=3.2GHz)2)Small rbb'Cc and high gain.(Typ.4ps)3)Small NF.lApplicationlUHF FR

High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Features Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC56612) Small rbbCc and high gain. (Typ. 6ps) 3) Small NF. (1) BasePackaging specifications and hFE ROHM : VMT3 (2) EmitterType 2SC5661 2SC4725 2SC4082 2SC3837K(3) CollectorPackage

High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz) 2SC5662 / 2SC4726 /2SC4083 / 2SC3838K Features Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT= 3.2GHz) 2SC56621.22) Small rbbCc and high gain. (Typ. 4ps) 0.323) Small NF. (3)(1)(2)0.220.130.4 0.4 0.5(1) Base0.8(2) Emitter(3) CollectorROHM : VMT3Packaging specifications and

2SC5661 / 2SC4725 / 2SC4082 / 2SC3837KTransistorsHigh-Frequency Amplifier Transistor(18V, 50mA, 1.5GHz)2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K External dimensions (Units : mm) Features1) High transition frequency. (Typ. fT = 1.5GHz)2SC5661 1.20.2 0.8 0.22) Small rbbCc and high gain. (Typ. 6ps)(2)(3)3) Small NF.(1)(1) Base0.15Max.ROHM : VMT3 (2) Emitter(3

UTC 2SC3835 NPN EPITAXIAL SILICON TRANSISTOR SWITCH NPN TRANSISTOR APLLICATION *Humidifier,DC-DC converter,and general purpose. 1TO-3PN1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25C) PARAMETER SYMBOL RATING UNITCollector-Base Voltage VCBO 200 VCollector-Emitter Voltage VCEO 120 VEmitter-Base Voltage VEBO 8 VBase Current IB 3 ACollector Current 7 A

UNISONIC TECHNOLOGIES CO., LTD 2SC3838 NPN SILICON TRANSISTOR HIGH-FREQUENCY AMPLIFIER TRANSISTOR 3 FEATURES 12*High transition frequency. *Small rbbCc and high gain. SOT-23*Small NF. 312SOT-323 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 32SC3838L-x-AE3-R 2SC3838G-x-AE3-R SOT-23 E B C Tape Reel2SC3

UNISONIC TECHNOLOGIES CO., LTD 2SC3834 NPN SILICON TRANSISTOR SWITCH NPN TRANSISTOR DESCRIPTION The UTC 2SC3834 is an epitaxial planar type NPN silicontransistor.. FEATURES * Humidifier, DC-DC converter, and general purpose ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2SC3834L-TA3-T 2SC3834G-TA3-T TO-220

2SC3836Silicon NPN EpitaxialApplicationLow frequency amplifier, switchingOutlineSPAK1. Emitter122. Collector33. Base2SC3836Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 15 VCollector current IC 300 mACollector power dissipation PC 300 mWJu

Product Specification www.jmnic.comSilicon NPN Power Transistor 2SC3835 DESCRIPTION Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) Good Linearity of hFE APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBO

Product Specification www.jmnic.comSilicon NPN Power Transistor 2SC3834 DESCRIPTION Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) Good Linearity of hFE APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBO

2SC3832Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor)Application : Switching Regulator and General PurposeExternal Dimensions MT-25(TO220) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Conditions 2SC3832 UnitSymbol 2SC3832 Unit0.24.80.210.20.1ICBOVCBO 500 V VCB=500V 100max A 2.

2SC3831Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor)Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol 2SC3831 Unit Symbol Conditions 2SC3831 Unit0.24.80.415.60.19.6 2.0VCBO 600 V VCB=600V 1max mAICBO

2SC3833Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor)Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol 2SC3833 Unit Symbol Conditions 2SC3833 Unit0.24.80.415.60.19.6 2.0VCBO 500 V VCB=500V 100max A

2SC3830Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor)Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-25(TO220)Symbol 2SC3830 Unit Symbol Conditions 2SC3830Unit0.24.80.210.20.1VCBO 600 V ICBO VCB=600V 1max 2.0mAVC

2SC3835Silicon NPN Triple Diffused Planar Transistor (Switching Transistor)Application : Humidifier, DC-DC Converter, and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol Ratings UnitUnit Symbol Conditions Ratings0.24.80.415.6VCBO 200 VCB=200V 100max A 0.1V ICBO9.6 2.0VCEO 120 IEBO

2SC3834Silicon NPN Triple Diffused Planar Transistor (Switching Transistor)Application : Humidifier, DC-DC Converter, and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-25(TO220)SymbolSymbol 2SC3834 Unit Conditions 2SC3834 Unit0.24.80.210.20.12.0ICBOVCBO 200 V VCB=200V 100max AIEBO 100max A

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM3838MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Emitter VoltageVCEO 11 VdcC

2SC3838COLLECTORHigh-Frequency Amplifier Transistor33NPN Silicon 11P b Lead(Pb)-Free2BASE2SOT-23EMITTERMAXIMUM RATINGS (Ta=25C)Rating Symbol ValueUnitVCollector-Emitter Voltage CEO 11 VCollector-Base Voltage VCBO20 VEmitter-Base Voltage VEBO3.0 VICmACollector Current-Continuous 50THERMAL CHARACTERISTICSCharacteristics Symbol ValueUnitT

2SC383TM(BR3DG383TMK) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features :G =33dB()(f=45MHz),h pe FE High gain: Gpe=33dB(Typ)(f=45MHz),good linearity of hFE.. / Applications TV final picture IF

2SC3834F(BR3DA3834F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features / Applications - Humidifier, DC-DC converter, and general purpose. / Equivalent Circuit /

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistorL2SC3838QLT1G Features1.High transition frequency.(Typ.fT=3.2GHz)S-L2SC3838QLT1G2.Small rbb`Cc and high gain.(Typ.4ps)3.Small NF.4.We declare that the material of product compliance with RoHS requirements.34.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AE

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC3838LT1G1.High transition frequency.(Typ.fT=3.2GHz)S-L2SC3838LT1G2.Small rbb`Cc and high gain.(Typ.4ps)3.Small NF.4.We declare that the material of product compliance with RoHS requirements.35.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC3837T1G1.High transition frequency.(Typ.fT=1.5GHz)2.Small rbb`Cc and high gain.(Typ.6ps)S-L2SC3837T1G3.Small NF.4.We declare that the material of product compliance with RoHS requirements.5.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC3838LT1G1.High transition frequency.(Typ.fT=3.2GHz)S-L2SC3838LT1G2.Small rbb`Cc and high gain.(Typ.4ps)3.Small NF.4.We declare that the material of product compliance with RoHS requirements.35.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC3837LT1G1.High transition frequency.(Typ.fT=1.5GHz)S-L2SC3837LT1G2.Small rbb`Cc and high gain.(Typ.6ps)3.Small NF.4.We declare that the material of product compliance with RoHS requirements.35.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC3837QLT1G1.High transition frequency.(Typ.fT=1.5GHz)S-L2SC3837QLT1G2.Small rbb`Cc and high gain.(Typ.6ps)3.Small NF.4.We declare that the material of product compliance with RoHS requirements.35.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AE

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC3837T1G1.High transition frequency.(Typ.fT=1.5GHz)2.Small rbb`Cc and high gain.(Typ.6ps)S-L2SC3837T1G3.Small NF.4.We declare that the material of product compliance with RoHS requirements.5.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistorL2SC3838NLT1G Features1.High transition frequency.(Typ.fT=3.2GHz)32.Small rbb`Cc and high gain.(Typ.4ps)3.Small NF.4.We declare that the material of product compliance with RoHS requirements.12MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol Value UnitCollector-Base Voltage V 20 VCBO

SMD Type TransistorsNPN Transistors2SC3838SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features3 High transition frequency. Small rbbCc and high gain. Small NF.1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Coll

2SC3834F(3DA3834F) NPN /SILICON NPN TRANSISTOR :- Purpose: Humidifier, DC-DC converter, and general purpose. /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V CBO200 V V CEO120 V V 8.0 V EBO I 7.0 A C I 3.0 A B P (Tc=25)

2SC3834(3DA3834) NPN /SILICON NPN TRANSISTOR :- Purpose: Humidifier, DC-DC converter, and general purpose. /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V CBO200 V V CEO120 V V 8.0 V EBO I 7.0 A C I 3.0 A B P (Tc=25) 50

GST2SC3838 High-Frequency Amplifier Transistor NPN Silicon Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : 11V amplifier and switch. Collector Current : 50mA Lead(Pb)-FreePackages & Pin Assignments GST2SC3838F(SOT-23) Pin Description1 Base 2 Emitter 3 Collector Marking Information P/N Package Part Marking GST

2SC3834T1TLSilicon NPN Power TransistorDESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I =3ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOGood Linearity of hFEAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgeneral purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collec

2SC3835T4TLSilicon NPN Power TransistorDESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I =3ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOGood Linearity of hFEAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgeneral purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collec

isc Silicon NPN Power Transistor 2SC3832DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 3ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 500V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUT

isc Silicon NPN Power Transistor 2SC3831DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 5ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 500V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUT

isc Silicon NPN Power Transistor 2SC3833DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

isc Silicon NPN Power Transistor 2SC3830DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I =2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 500V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE

isc Silicon NPN Power Transistor 2SC3835DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I =3ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgeneral purpose appl

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3835G DESCRIPTION Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) Good Linearity of hFEAPPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC3838DESCRIPTIONLow NoiseNF = 3.5 dB TYP. @V = 6 V, I = 2 mA, f = 500 MHzCE CHigh Current-Gain Bandwidth Productf = 3.2 GHz TYP. @V = 10 V, I = 10 mA, f = 500 MHzT CE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low-n

isc Silicon NPN Power Transistor 2SC3834DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I =3ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgeneral purpose appl