2N2069 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2N2069
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 75 W
   Tensión colector-base (Vcb): 40 V
   Corriente del colector DC máxima (Ic): 12 A
   Temperatura operativa máxima (Tj): 100 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: TO3

Búsqueda de reemplazo de transistor bipolar 2N2069

2N2069 Datasheet (PDF)

9.1. Size:319K rca
2n105 2n206 2n247 2n269 2n301 2n301a 2n331 2n356 2n357 2n358.pdf

9.2. Size:429K central
2n2060m.pdf

2N2060Mwww.centralsemi.comSILICONDESCRIPTION:DUAL NPN TRANSISTORThe CENTRAL SEMICONDUCTOR 2N2060M is a silicondual NPN transistor utilizing two individual chips mountedin a hermetically sealed metal case designed for differential amplifier applications.MARKING: FULL PART NUMBERTO-78 CASEMAXIMUM RATINGS: (TA=25C unless otherwise noted) SYMBOL UNITSCollector-Base Volt

9.3. Size:10K semelab
2n2060adcsm.pdf

2N2060ADCSMDimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar PNP Devices. A0.236 5rad. (0.009) V = 80V CEO6.22 0.13 A = 1.27 0.13I = 0.5A C(0.

9.4. Size:53K microsemi
2n2060.pdf

TECHNICAL DATA UNITIZED DUAL NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/270 Devices Qualified Level JAN 2N2060 JANTX 2N2060L JANTXV MAXIMUM RATINGS Ratings Symbol 2N2060 Unit Collector-Emitter Voltage 60 Vdc VCEO Collector-Base Voltage 100 Vdc VCBO Emitter-Base Voltage 7.0 Vdc VEBO Collector Current 500 mAdc IC One Both Section Sections Total

9.5. Size:45K microsemi
2n2060l.pdf