2SC3873 Datasheet. Equivalente

 ..1. Size:175K  1
 2sc3873.pdf

Power Transistors 2SC3873 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 15.0 0.3 5.0 0.2 Features 11.0 0.2 3.2 High-speed switching High collector to base voltage VCBO 3.2 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the hea

 ..2. Size:84K  jmnic
 2sc3873.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3873 DESCRIPTION With TO-3PFa package High VCBO High speed switching Good linearity of hFE Wide area of safe operation APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS

 ..3. Size:210K  inchange semiconductor
 2sc3873.pdf

 8.1. Size:946K  1
 2sc3880s 2sc3195 2sc3194 ktc9016 ktc9018 bf599 2sc3879s 2sc3193 2sc3192 ktc9011 2sc3878s 2sc3191 2sc3190.pdf

 8.2. Size:59K  panasonic
 2sc3870.pdf

Power Transistors 2SC3870 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High-speed switching 3.1 0.1 High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 +0.2 Abso

 8.3. Size:66K  panasonic
 2sc3872.pdf

Power Transistors 2SC3872 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 15.0 0.3 5.0 0.2 Features 11.0 0.2 3.2 High-speed switching High collector to base voltage VCBO 3.2 0.1 Wide area of safe operation (ASO) Full-pack package which can be installed to the heat sink with one screw 2.0 0.2 2.0 0.1 Absolute Maximu

 8.4. Size:62K  panasonic
 2sc3874.pdf

Power Transistors 2SC3874 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 3.3 0.2 20.0 0.5 5.0 0.3 3.0 Features High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) 1.5 Satisfactory linearity of foward current transfer ratio hFE 1.5 2.0 0.3 Absolute Maximum Ratings (TC=25 C) 2.7

 8.5. Size:152K  jmnic
 2sc3870.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC3870 DESCRIPTION With TO-220Fa package High breakdown voltage Wide area of safe operation APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open

 8.6. Size:175K  jmnic
 2sc3874.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC3874 DESCRIPTION With TO-3PL package High speed switching High VCBO Wide area of safe operation APPLICATIONS For high-speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol 3 Emitter Absolute maximum ratin

 8.7. Size:212K  inchange semiconductor
 2sc3870.pdf

 8.8. Size:211K  inchange semiconductor
 2sc3871.pdf

 8.9. Size:185K  inchange semiconductor
 2sc3874.pdf

isc Product Specification isc Silicon NPN Power Transistor 2SC3874 DESCRIPTION Silicon NPN triple diffusion planar type High Switching Speed Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage high-speed switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI