2SC3885 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3885
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50 W
Tensión colector-base (Vcb): 1400 V
Tensión colector-emisor (Vce): 600 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 7 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 8 MHz
Capacitancia de salida (Cc): 150 pF
Ganancia de corriente contínua (hfe): 8
Paquete / Cubierta: TOP3
Búsqueda de reemplazo de transistor bipolar 2SC3885
2SC3885 Datasheet (PDF)
2sc3885.pdf
isc Silicon NPN Power Transistor 2SC3885DESCRIPTIONHigh Breakdown Voltage: V = 1400V (Min)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display.High speed switching regulator output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
2sc3880s 2sc3195 2sc3194 ktc9016 ktc9018 bf599 2sc3879s 2sc3193 2sc3192 ktc9011 2sc3878s 2sc3191 2sc3190.pdf
2sc388.pdf
2SC388 0.05A , 30V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES TV Final picture if amplifier applications G HEmitterCollectorBase JA DMillimeter REF. Min. Max.BA 4.40 4.70B 4.30 4.70KC 12.70 -D 3.30 3.81E 0.36 0.56F 0.36 0.51
2sc388.pdf
2SC388(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features TV final pictureif amplifier applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Emitter Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 50 mA Dimensions in inches a
2sc3886.pdf
isc Silicon NPN Power Transistor 2SC3886DESCRIPTIONHigh Breakdown Voltage-: V = 600V (Min)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display.High speed switching regulator output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
2sc3886a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3886A DESCRIPTION With TO-3P(H)IS package High voltage ,high speed APPLICATIONS Horizontal deflection output for high resolution display High speed switching regulator output applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3P(H)IS) and symbol 3
2sc3883.pdf
isc Silicon NPN Power Transistor 2SC3883DESCRIPTIONHigh Breakdown Voltage-: V = 800V (Min)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display.High speed switching regulator output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
2sc3884.pdf
isc Silicon NPN Power Transistor 2SC3884DESCRIPTIONHigh Breakdown Voltage-: V = 1400V (Min)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display.High speed switching regulator output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 2N2602 | KT837H1-IM | 2N2364
History: 2N2602 | KT837H1-IM | 2N2364
Liste
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