2SC3885A
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3885A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50
W
Tensión colector-base (Vcb): 1500
V
Tensión colector-emisor (Vce): 600
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 7
A
Temperatura operativa máxima (Tj): 175
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 8
MHz
Capacitancia de salida (Cc): 210
pF
Ganancia de corriente contínua (hfe): 8
Paquete / Cubierta:
ISOWATT218
Búsqueda de reemplazo de transistor bipolar 2SC3885A
2SC3885A
Datasheet (PDF)
7.1. Size:215K inchange semiconductor
2sc3885.pdf
isc Silicon NPN Power Transistor 2SC3885DESCRIPTIONHigh Breakdown Voltage: V = 1400V (Min)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display.High speed switching regulator output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
8.3. Size:115K secos
2sc388.pdf
2SC388 0.05A , 30V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES TV Final picture if amplifier applications G HEmitterCollectorBase JA DMillimeter REF. Min. Max.BA 4.40 4.70B 4.30 4.70KC 12.70 -D 3.30 3.81E 0.36 0.56F 0.36 0.51
8.4. Size:194K lge
2sc388.pdf
2SC388(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features TV final pictureif amplifier applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Emitter Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 50 mA Dimensions in inches a
8.5. Size:214K inchange semiconductor
2sc3886.pdf
isc Silicon NPN Power Transistor 2SC3886DESCRIPTIONHigh Breakdown Voltage-: V = 600V (Min)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display.High speed switching regulator output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
8.6. Size:94K inchange semiconductor
2sc3886a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3886A DESCRIPTION With TO-3P(H)IS package High voltage ,high speed APPLICATIONS Horizontal deflection output for high resolution display High speed switching regulator output applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3P(H)IS) and symbol 3
8.7. Size:247K inchange semiconductor
2sc3883.pdf
isc Silicon NPN Power Transistor 2SC3883DESCRIPTIONHigh Breakdown Voltage-: V = 800V (Min)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display.High speed switching regulator output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
8.8. Size:215K inchange semiconductor
2sc3884.pdf
isc Silicon NPN Power Transistor 2SC3884DESCRIPTIONHigh Breakdown Voltage-: V = 1400V (Min)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display.High speed switching regulator output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
Otros transistores... 2N3200
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