2SC3894 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3894
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 60 W
Tensión colector-base (Vcb): 1500 V
Tensión colector-emisor (Vce): 800 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 6 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 8 MHz
Capacitancia de salida (Cc): 150 pF
Ganancia de corriente contínua (hfe): 55
Paquete / Cubierta: TOP3
Búsqueda de reemplazo de transistor bipolar 2SC3894
2SC3894 Datasheet (PDF)
2sc3894.pdf
Ordering number EN2965B NPN Triple Diffused Planar Silicon Transistor 2SC3894 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SC3894] Adoption of MBIT process. 1 Base 2 Collector 3
2sc3894.pdf
isc Silicon NPN Power Transistor 2SC3894 DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
2sc3896.pdf
Ordering number EN4097 NPN Triple Diffused Planar Silicon Transistor 2SC3896 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High reliability (Adoption of HVP process). 2039D High breakdown voltage (VCBO=1500V). [2SC3896] Adoption of MBIT process. 1 Base 2 Collector 3 E
2sc3897.pdf
Ordering number EN4098 NPN Triple Diffused Planar Silicon Transistor 2SC3897 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High reliability (Adoption of HVP process). 2039D High breakdown voltage (VCBO=1500V). [2SC3897] Adoption of MBIT process. 1 Base 2 Collector 3 E
Otros transistores... 2SC3890 , 2SC3890A , 2SC3891 , 2SC3891A , 2SC3892 , 2SC3892A , 2SC3893 , 2SC3893A , C3198 , 2SC3894A , 2SC3895 , 2SC3895A , 2SC3896 , 2SC3896A , 2SC3897 , 2SC3897A , 2SC3898 .
History: BFV39 | BDT62CF | 2SD23 | 2SC2905 | GCN53 | KD606 | K2122B
History: BFV39 | BDT62CF | 2SD23 | 2SC2905 | GCN53 | KD606 | K2122B
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