2SC3903 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3903 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 10 V
Corriente del colector DC máxima (Ic): 0.065 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 9000 MHz
Ganancia de corriente contínua (hFE): 10
Encapsulados: TO236
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2SC3903 datasheet
8.2. Size:61K sanyo
2sa1507 2sc3902.pdf 
Ordering number EN2101D 2SA1507 / 2SC3902 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1507 / 2SC3902 160V / 1.5A Switching Applications Applications Color TV audio output, converters, inverters. Features High breakdown voltage. Large current capacity. Adoption of FBET and MBIT process. The plastic-covered heat sink elimina
8.3. Size:53K sanyo
2sc3902.pdf
Ordering number ENN2101C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1507/2SC3902 160V/1.5A Switching Applications Applications Package Dimensions Color TV audio output, converters, inverters. unit mm 2042B Features [2SA1507/2SC3902] 8.0 High breakdown voltage. 4.0 3.3 1.0 1.0 Large current capacity. Adoption of FBET and MBIT process. 3.0 The plastic-cove
8.4. Size:1772K rohm
2sc4102 2sc3906k.pdf
2SC4102 / 2SC3906K Datasheet High-voltage Amplifier Transistor (120V, 50mA) lOutline l Parameter Value SOT-323 SOT-346 VCEO 120V IC 50mA 2SC4102 2SC3906K (UMT3) (SMT3) lFeatures lInner circuit l l 1)High breakdown voltage. (BVCEO=120V) 2)Complements the 2SA1579/2SA1514K.
8.5. Size:1509K rohm
2sc3906kfra.pdf
2SC3906K FRA Datasheet High-voltage Amplifier Transistor (120V, 50mA) AEC-Q101 Qualified lOutline l SOT-346 Parameter Value SC-59 VCEO 120V IC 50mA SMT3 lFeatures lInner circuit l l 1)High breakdown voltage. (BVCEO=120V) 2)Complements the 2SA1514K FRA. lApplication l HIGH VOLTAGE AMPLIFIER lPackaging specifications l Basic Pac
8.6. Size:67K rohm
2sc4102 2sc3906k 2sc2389s.pdf
2SC4102 / 2SC3906K / 2SC2389S Transistors High-voltage Amplifier Transistor (120V, 50mA) 2SC4102 / 2SC3906K / 2SC2389S External dimensions (Unit mm) Features 1) High breakdown voltage. (BVCEO = 120V) 2SC4102 2) Complements the 2SA1579 / 2SA1514K / 2SA1038S. 1.25 Absolute maximum ratings (Ta=25 C) 2.1 Parameter Symbol Limits Unit Collector-base voltage VCBO 120 V C
8.7. Size:57K rohm
2sc3906k.pdf
2SC4102 / 2SC3906K / 2SC2389S Transistors High-voltage Amplifier Transistor (120V, 50mA) 2SC4102 / 2SC3906K / 2SC2389S External dimensions (Units mm) Features 1) High breakdown voltage. (BVCEO = 120V) 2SC4102 2) Complements the 2SA1579 / 2SA1514K / 2SA1038S. 1.25 2.1 Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO 120 V Collector-
8.8. Size:37K panasonic
2sc3904.pdf
Transistor 2SC3904 Silicon NPN epitaxial planer type For 2GHz band low-noise amplification Unit mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High transition frequency fT. Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25 C) 0.1 to 0.
8.9. Size:41K panasonic
2sc3904 e.pdf
Transistor 2SC3904 Silicon NPN epitaxial planer type For 2GHz band low-noise amplification Unit mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High transition frequency fT. Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25 C) 0.1 to 0.
8.10. Size:48K wingshing
2sc3907.pdf
2SC3907 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SA1516 ABSOLUTE MAXIMUM RATING (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 180 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 12 A
8.11. Size:617K kexin
2sc3904.pdf
SMD Type Transistors NPN Transistors 2SC3904 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=65mA 1 2 Collector Emitter Voltage VCEO=10V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collec
8.12. Size:1268K kexin
2sc3906k.pdf
SMD Type Transistors NPN Transistors 2SC3906K SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features High Breakdown Voltage Complementary to 2SA1514K 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage
8.13. Size:700K kexin
2sc3900.pdf
SMD Type Transistors NPN Transistors 2SC3900 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=50V 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collect
8.15. Size:1283K slkor
2sc3904.pdf
2SC3904 NPN Transistor Features SOT-89 Ideal for switching and amplification Equivalent Circuit 2.Collector 1.Base 2.Collector 3. Emitter Marking Code 1E. 1.Base 3. Emitter . Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 60 V CBO Collector Emitter Voltage V 40 V CEO Emitt
8.16. Size:1284K cn sps
2sc3907t4tl.pdf
2SC3907T4TL Silicon NPN Power Transistor DESCRIPTION Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1516 APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base
8.17. Size:177K cn sptech
2sc3907r 2sc3907o.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3907 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1516 APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
8.18. Size:223K inchange semiconductor
2sc3907.pdf
isc Silicon NPN Power Transistor 2SC3907 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1516 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage applications
8.19. Size:187K inchange semiconductor
2sc3902.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3902 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO Large Current Capacity Complement to Type 2SA1507 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV audio output, converters, inverters. ABSOLUTE MAXIMUM
8.20. Size:240K inchange semiconductor
2sc3907s.pdf
isc Silicon NPN Power Transistor 2SC3907S DESCRIPTION Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1516S Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage applicatio
Otros transistores... 2SC39, 2SC390, 2SC3900, 2SC3901, 2SC3902, 2SC3902R, 2SC3902S, 2SC3902T, 2SA1015, 2SC3904, 2SC3905, 2SC3906, 2SC3907, 2SC3907O, 2SC3907R, 2SC3908, 2SC3909
