2SC3934 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3934
Código: 1U
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1 W
Tensión colector-base (Vcb): 15 V
Corriente del colector DC máxima (Ic): 0.03 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4500 MHz
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: TO236
Búsqueda de reemplazo de transistor bipolar 2SC3934
2SC3934 Datasheet (PDF)
2sc3934 e.pdf
Transistor2SC3934Silicon NPN epitaxial planer typeFor high-frequency wide-band low-noise amplificationUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT. 1S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol R
2sc3934.pdf
Transistor2SC3934Silicon NPN epitaxial planer typeFor high-frequency wide-band low-noise amplificationUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT. 1S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol R
2sc3931 e.pdf
Transistor2SC3931Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesOptimum for RF amplification of FM/AM radios. 1High transition frequency fT.S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Absolute Maximum Ratings (Ta
2sc3935.pdf
Transistor2SC3935Silicon NPN epitaxial planer typeFor high-frequency amplification/oscillation/mixingUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT. 1Small collector output capacitance Cob and common base reversetransfer capacitance Crb.3S-Mini type package, allowing downsizing of the equipment and2automatic insertion through the tape p
2sc3932.pdf
Transistors2SC3932Silicon NPN epitaxial planer typeUnit: mmFor high-frequency amplification / oscillation / mixing0.3+0.1 0.15+0.100.050.03 Features High transition frequency fT 1 2 S-mini type package, allowing downsizing of the equipment and(0.65) (0.65)automatic insertion through the tape packing and the magazine1.30.12.00.2packing.10 Abs
2sc3936 e.pdf
Transistor2SC3936Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesOptimum for RF amplification, oscillation, mixing, and IF of FM/AM radios. 1S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Absolute Maximum Ratings (Ta=2
2sc3935 e.pdf
Transistor2SC3935Silicon NPN epitaxial planer typeFor high-frequency amplification/oscillation/mixingUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT. 1Small collector output capacitance Cob and common base reversetransfer capacitance Crb.3S-Mini type package, allowing downsizing of the equipment and2automatic insertion through the tape p
2sc3939.pdf
Transistor2SC3939Silicon NPN epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SA15335.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.Allowing supply with the radial taping.0.7 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratin
2sc3937.pdf
Transistor2SC3937Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesLow noise figure NF. 1High gain.High transition frequency fT.3S-Mini type package, allowing downsizing of the equipment and2automatic insertion through the tape packing and the magazinepacking.Absolute Maximum Ratings (Ta=25C)
2sc3936.pdf
Transistor2SC3936Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesOptimum for RF amplification, oscillation, mixing, and IF of FM/AM radios. 1S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Absolute Maximum Ratings (Ta=2
2sc3937 e.pdf
Transistor2SC3937Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesLow noise figure NF. 1High gain.High transition frequency fT.3S-Mini type package, allowing downsizing of the equipment and2automatic insertion through the tape packing and the magazinepacking.Absolute Maximum Ratings (Ta=25C)
2sc3938 e.pdf
Transistor2SC3938Silicon NPN epitaxial planer typeFor high speed switchingUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh-speed switching.1Low collector to emitter saturation voltage VCE(sat).S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Allowing pair use with 2SA1739.Abso
2sc3930.pdf
Transistor2SC3930Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA15322.1 0.10.425 1.25 0.1 0.425FeaturesOptimum for RF amplification of FM/AM radios. 1High transition frequency fT.S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Ab
2sc3933 e.pdf
Transistor2SC3933Silicon NPN planer typeFor UHF amplification/mixingUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh power gain PG. 1High transition frequency fT.S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit
2sc3930 e.pdf
Transistor2SC3930Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA15322.1 0.10.425 1.25 0.1 0.425FeaturesOptimum for RF amplification of FM/AM radios. 1High transition frequency fT.S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Ab
2sc3932 e.pdf
Transistor2SC3932Silicon NPN epitaxial planer typeFor high-frequency amplification/oscillation/mixingUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT. 1S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ra
2sc3931.pdf
Transistor2SC3931Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesOptimum for RF amplification of FM/AM radios. 1High transition frequency fT.S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Absolute Maximum Ratings (Ta
2sc3939 e.pdf
Transistor2SC3939Silicon NPN epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SA15335.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.Allowing supply with the radial taping.0.7 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratin
2sc3938.pdf
Transistor2SC3938Silicon NPN epitaxial planer typeFor high speed switchingUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh-speed switching.1Low collector to emitter saturation voltage VCE(sat).S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Allowing pair use with 2SA1739.Abso
2sc3930.pdf
2SC3930 0.03A , 30V NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURE SOT-323 For high-frequency Amplification Complementary ALto 2SA1532 33 Optimum for RF amplification of FM/AM radios Top View C B High transition frequency fT 11 22K EDCLASSIFI
2sc3930.pdf
2SC3930TRANSISTOR (NPN)SOT-323 FEATURES For high-frequency Amplification Complementary to 2SA1532 Optimum for RF amplification of FM/AM radios High transition frequency fT 1.BASE 2.EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.COLLECTOR Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Bas
2sc3930.pdf
SMD Type TransistorsNPN Transistors2SC3930 Features Optimum for RF amplification of FM/AM radios. High transition frequency fT. Complementary to 2SA15321 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 5 Colle
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SA1384
History: 2SA1384
Liste
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