2SC396 Datasheet. Equivalente

 0.1. Size:213K  toshiba
 2sc3964.pdf

 0.2. Size:192K  toshiba
 2sc3963.pdf

 0.3. Size:120K  rohm
 2sc3969.pdf

Transistors High Voltage Switching Transistor (400V, 2A) 2SC3969 / 2SC5161 FFeatures FExternal dimensions (Units mm) 1) Low VCE(sat). VCE(sat) = 0.15V (Typ.) (IC / IB = 1A / 0.2A) 2) High breakdown voltage. VCEO = 400V 3) Fast switching. tr = 1.0 s (IC = 0.8A) FStructure Three-layer, diffused planar type NPN silicon transistor (96-698-C14) 236 Transistors 2SC3969 / 2SC5161

 0.4. Size:40K  panasonic
 2sc3965 e.pdf

Transistor 2SC3965 Silicon NPN triple diffusion planer type For small TV video output Unit mm 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Small collector output capacitance Cob. Allowing supply with the radial taping. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.15 +0.15 Collector to base voltage VCBO 300 V 0.45 0.1 0

 0.5. Size:146K  jmnic
 2sc3962.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC3962 DESCRIPTION With TO-220C package High voltage High speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNI

 0.6. Size:94K  inchange semiconductor
 2sc3969-220.pdf

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3969 DESCRIPTION With TO-220C package Low collector saturation voltage High breakdown voltage Fast switching speed APPLICATIONS For high voltage switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Tc=25

 0.7. Size:211K  inchange semiconductor
 2sc3969.pdf

isc Silicon NPN Power Transistor 2SC3969 DESCRIPTION Low Collector Saturation Voltage High Collector-Emitter Breakdown Voltage V = 400V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 0.8. Size:209K  inchange semiconductor
 2sc3968.pdf

isc Silicon NPN Power Transistor 2SC3968 DESCRIPTION Low Collector Saturation Voltage High Collector-Emitter Breakdown Voltage- V = 400V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU

 0.9. Size:182K  inchange semiconductor
 2sc3962.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3962 DESCRIPTION Low Collector Saturation Voltage Collector-Emitter Breakdown Voltage- V = 400V (Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications A