2SC3975 Todos los transistores

Power Transistors 2SC3975 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 15.0 0.3 5.0 0.2 Features 11.0 0.2 3.2 High-speed switching High collector to base voltage VCBO 3.2 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the hea

isc Silicon NPN Power Transistor 2SC3975 DESCRIPTION Collector-Base Breakdown Voltage- V = 800V(Min.) (BR)CBO Wide Area of Safe Operation High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT

Power Transistors 2SC3973, 2SC3973A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 High-speed switching High collector to base voltage VCBO 3.1 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be insta

Power Transistors 2SC3971, 2SC3971A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 High-speed switching High collector to base voltage VCBO 3.1 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be insta

Power Transistors 2SC3972, 2SC3972A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 High-speed switching High collector to base voltage VCBO 3.1 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be insta

Power Transistors 2SC3979, 2SC3979A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) 3.1 0.1 Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be insta

Power Transistors 2SC3978, 2SC3978A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 High-speed switching High collector to base voltage VCBO 3.1 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be insta

Power Transistors 2SC3976 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 3.3 0.2 20.0 0.5 5.0 0.3 3.0 Features High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) 1.5 Satisfactory linearity of foward current transfer ratio hFE 1.5 2.0 0.3 Absolute Maximum Ratings (TC=25 C) 2.7

Power Transistors 2SC3970, 2SC3970A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 High-speed switching High collector to base voltage VCBO 3.1 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be insta

Power Transistors 2SC3977, 2SC3977A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 High-speed switching High collector to base voltage VCBO 3.1 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be insta

Power Transistors 2SC3974 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 15.0 0.3 5.0 0.2 Features 11.0 0.2 3.2 High-speed switching High collector to base voltage VCBO 3.2 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the hea

JMnic Product Specification Silicon NPN Power Transistors 2SC3973 2SC3973A DESCRIPTION With TO-220Fa package High breakdown voltage High speed switching Wide area of safe operation APPLICATIONS For high breakdown voltate ,high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Ab

JMnic Product Specification Silicon NPN Power Transistors 2SC3972 2SC3972A DESCRIPTION With TO-220Fa package High speed switching High VCBO Wide area of safe operation APPLICATIONS For high breakdown voltate ,high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximu

Product Specification www.jmnic.com Silicon Power Transistors 2SC3979 DESCRIPTION With TO-220Fa package High breakdown voltage High speed switching Wide area of safe operation (SOA) Full-pack package which can be installed to the heak sink with one screw PINNING PIN DESCRIPTION 1 Base 2 Collector 3 emitter Fig.1 simplified outline (TO-220Fa) and symbol ABS

JMnic Product Specification Silicon NPN Power Transistors 2SC3970 2SC3970A DESCRIPTION With TO-220Fa package High speed switching High VCBO Wide area of safe operation APPLICATIONS For high breakdown voltate ,high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maxim

isc Silicon NPN Power Transistor 2SC3973 DESCRIPTION Collector-Base Breakdown Voltage- V = 800V(Min.) (BR)CBO Wide Area of Safe Operation High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3973B DESCRIPTION With TO-220Fa package High voltage,high speed Wide area of safe operation APPLICATIONS For high voltage,high speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220Fa) and symbol 3 Emi

isc Silicon NPN Power Transistor 2SC3972 DESCRIPTION Collector-Base Breakdown Voltage- V = 800V(Min.) (BR)CBO Wide Area of Safe Operation High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3970 2SC3970A DESCRIPTION With TO-220Fa package High speed switching High VCBO Wide area of safe operation APPLICATIONS For high breakdown voltate ,high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitte

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3972 2SC3972A DESCRIPTION With TO-220Fa package High speed switching High VCBO Wide area of safe operation APPLICATIONS For high breakdown voltate ,high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitte

isc Silicon NPN Power Transistor 2SC3979 DESCRIPTION Collector-Base Breakdown Voltage- V = 900V(Min.) (BR)CBO Wide Area of Safe Operation High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3973 2SC3973A DESCRIPTION With TO-220Fa package High breakdown voltage High speed switching Wide area of safe operation APPLICATIONS For high breakdown voltate ,high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and sym

isc Silicon NPN Power Transistor 2SC3970 DESCRIPTION Collector-Base Breakdown Voltage- V = 800V(Min.) (BR)CBO Wide Area of Safe Operation High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT

isc Silicon NPN Power Transistor 2SC3974 DESCRIPTION Collector-Base Breakdown Voltage- V = 800V(Min.) (BR)CBO Wide Area of Safe Operation High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT