2SC3975 Todos los transistores

 

2SC3975 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC3975
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 100 W
   Tensión colector-base (Vcb): 800 V
   Tensión colector-emisor (Vce): 500 V
   Corriente del colector DC máxima (Ic): 10 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TOP3
 

 Búsqueda de reemplazo de 2SC3975

   - Selección ⓘ de transistores por parámetros

 

2SC3975 Datasheet (PDF)

 ..1. Size:59K  panasonic
2sc3975.pdf pdf_icon

2SC3975

Power Transistors2SC3975Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm15.0 0.3 5.0 0.2Features11.0 0.2 3.2High-speed switchingHigh collector to base voltage VCBO 3.2 0.1Wide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed to the hea

 ..2. Size:210K  inchange semiconductor
2sc3975.pdf pdf_icon

2SC3975

isc Silicon NPN Power Transistor 2SC3975DESCRIPTION Collector-Base Breakdown Voltage-: V = 800V(Min.)(BR)CBOWide Area of Safe OperationHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNIT

 8.1. Size:60K  panasonic
2sc3973.pdf pdf_icon

2SC3975

Power Transistors2SC3973, 2SC3973ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm10.0 0.2 4.2 0.2Features5.5 0.2 2.7 0.2High-speed switchingHigh collector to base voltage VCBO 3.1 0.1Wide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be insta

 8.2. Size:60K  panasonic
2sc3971.pdf pdf_icon

2SC3975

Power Transistors2SC3971, 2SC3971ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm10.0 0.2 4.2 0.2Features5.5 0.2 2.7 0.2High-speed switchingHigh collector to base voltage VCBO 3.1 0.1Wide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be insta

Otros transistores... 2SC3968 , 2SC3969 , 2SC397 , 2SC3970 , 2SC3971 , 2SC3972 , 2SC3973 , 2SC3974 , D880 , 2SC3976 , 2SC3977 , 2SC3978 , 2SC3979 , 2SC397D , 2SC398 , 2SC3980 , 2SC3981 .

History: HBC114ES6R | HEPS5024 | HBCA124ES6R

 

 
Back to Top

 


 
.