2SC3988
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3988
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 150
W
Tensión colector-base (Vcb): 800
V
Tensión colector-emisor (Vce): 500
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 25
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 18
MHz
Capacitancia de salida (Cc): 260
pF
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta:
TO247
Búsqueda de reemplazo de transistor bipolar 2SC3988
2SC3988
Datasheet (PDF)
..1. Size:114K sanyo
2sc3988.pdf 
Ordering number:EN2232BNPN Triple Diffused Planar Silicon Transistor2SC3988500V/25A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed.2022A Wide ASO.[2SC3988] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsolute Maximum Ratings at
..2. Size:119K jmnic
2sc3988.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3988 DESCRIPTION With TO-220Fa package High breakdown voltage high reliability. Wide ASO (Safe Operating Area) Fast switching speed APPLICATIONS 500V/25A Switching Regulator Applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified ou
..3. Size:211K inchange semiconductor
2sc3988.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3988 DESCRIPTION With TO-3PN package High breakdown voltage high reliability. Wide area of safe operation Fast switching speed APPLICATIONS 500V/25A switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (
8.1. Size:24K sanyo
2sc3989.pdf
Ordering number:EN2556NPN Triple Diffused Planar Silicon Transistor2SC3989500V/25A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf=0.1 s typ).2048B Adoption of MBIT process.[2SC3989]1 : Base2 : Collector3 : EmitterSANYO : TO-3PBLSpecificationsAbsolute Maximum Ratings
8.2. Size:90K sanyo
2sc3986.pdf
Ordering number:EN2220BNPN Planar Silicon Darlington Transistor2SC3986Driver ApplicationsApplications Package Dimensions Suitable for use in switching of L load (motorunit:mmdrivers, printer hammer drivers, relay drivers).2041A[2SC3986]Features High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 60 10V between collectorand
8.3. Size:83K sanyo
2sc3987.pdf
Ordering number:EN2221BNPN Planar Silicon Darlington Transistor2SC3987Driver ApplicationsApplications Package Dimensions Suitable for use in switching of L load (motorunit:mmdrivers, printer hammer drivers, relay drivers).2041A[2SC3987]Features High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 60 10V between collectorand
8.4. Size:60K panasonic
2sc3981.pdf
Power Transistors2SC3981, 2SC3981ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mmFeatures15.0 0.3 5.0 0.2High-speed switching11.0 0.2 3.2High collector to base voltage VCBOWide area of safe operation (ASO) 3.2 0.1Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed
8.5. Size:62K panasonic
2sc3982.pdf
Power Transistors2SC3982, 2SC3982ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm 3.3 0.220.0 0.5 5.0 0.33.0FeaturesHigh-speed switchingHigh collector to base voltage VCBOWide area of safe operation (ASO) 1.5Satisfactory linearity of foward current transfer ratio hFE1.52.0 0.3Absolute Maximum Ratings (TC=2
8.6. Size:59K panasonic
2sc3980.pdf
Power Transistors2SC3980, 2SC3980ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mmFeatures15.0 0.3 5.0 0.2High-speed switching11.0 0.2 3.2High collector to base voltage VCBOWide area of safe operation (ASO) 3.2 0.1Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed
8.7. Size:211K inchange semiconductor
2sc3981.pdf
isc Silicon NPN Power Transistor 2SC3981DESCRIPTION Collector-Base Breakdown Voltage-: V = 900V(Min.)(BR)CBOWide Area of Safe OperationHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNIT
8.8. Size:211K inchange semiconductor
2sc3980.pdf
isc Silicon NPN Power Transistor 2SC3980DESCRIPTION Collector-Base Breakdown Voltage-: V = 900V(Min.)(BR)CBOWide Area of Safe OperationHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNIT
8.9. Size:216K inchange semiconductor
2sc3989.pdf
isc Silicon NPN Power Transistor 2SC3989DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 500V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
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