2SC3989M Datasheet. Equivalente

 7.1. Size:24K  sanyo
 2sc3989.pdf

Ordering number EN2556 NPN Triple Diffused Planar Silicon Transistor 2SC3989 500V/25A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf=0.1 s typ). 2048B Adoption of MBIT process. [2SC3989] 1 Base 2 Collector 3 Emitter SANYO TO-3PBL Specifications Absolute Maximum Ratings

 7.2. Size:216K  inchange semiconductor
 2sc3989.pdf

isc Silicon NPN Power Transistor 2SC3989 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 500V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

 8.1. Size:114K  sanyo
 2sc3988.pdf

Ordering number EN2232B NPN Triple Diffused Planar Silicon Transistor 2SC3988 500V/25A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed. 2022A Wide ASO. [2SC3988] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolute Maximum Ratings at

 8.2. Size:90K  sanyo
 2sc3986.pdf

Ordering number EN2220B NPN Planar Silicon Darlington Transistor 2SC3986 Driver Applications Applications Package Dimensions Suitable for use in switching of L load (motor unit mm drivers, printer hammer drivers, relay drivers). 2041A [2SC3986] Features High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 60 10V between collector and

 8.3. Size:83K  sanyo
 2sc3987.pdf

Ordering number EN2221B NPN Planar Silicon Darlington Transistor 2SC3987 Driver Applications Applications Package Dimensions Suitable for use in switching of L load (motor unit mm drivers, printer hammer drivers, relay drivers). 2041A [2SC3987] Features High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 60 10V between collector and

 8.4. Size:60K  panasonic
 2sc3981.pdf

Power Transistors 2SC3981, 2SC3981A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm Features 15.0 0.3 5.0 0.2 High-speed switching 11.0 0.2 3.2 High collector to base voltage VCBO Wide area of safe operation (ASO) 3.2 0.1 Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed

 8.5. Size:62K  panasonic
 2sc3982.pdf

Power Transistors 2SC3982, 2SC3982A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 3.3 0.2 20.0 0.5 5.0 0.3 3.0 Features High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) 1.5 Satisfactory linearity of foward current transfer ratio hFE 1.5 2.0 0.3 Absolute Maximum Ratings (TC=2

 8.6. Size:59K  panasonic
 2sc3980.pdf

Power Transistors 2SC3980, 2SC3980A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm Features 15.0 0.3 5.0 0.2 High-speed switching 11.0 0.2 3.2 High collector to base voltage VCBO Wide area of safe operation (ASO) 3.2 0.1 Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed

 8.7. Size:119K  jmnic
 2sc3988.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3988 DESCRIPTION With TO-220Fa package High breakdown voltage high reliability. Wide ASO (Safe Operating Area) Fast switching speed APPLICATIONS 500V/25A Switching Regulator Applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified ou

 8.8. Size:211K  inchange semiconductor
 2sc3981.pdf

isc Silicon NPN Power Transistor 2SC3981 DESCRIPTION Collector-Base Breakdown Voltage- V = 900V(Min.) (BR)CBO Wide Area of Safe Operation High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT

 8.9. Size:211K  inchange semiconductor
 2sc3980.pdf

isc Silicon NPN Power Transistor 2SC3980 DESCRIPTION Collector-Base Breakdown Voltage- V = 900V(Min.) (BR)CBO Wide Area of Safe Operation High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT

 8.10. Size:211K  inchange semiconductor
 2sc3988.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3988 DESCRIPTION With TO-3PN package High breakdown voltage high reliability. Wide area of safe operation Fast switching speed APPLICATIONS 500V/25A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (