2SC399 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC399 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.02 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 250 MHz
Capacitancia de salida (Cc): 0.5 pF
Ganancia de corriente contínua (hFE): 20
Encapsulados: TO72
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2SC399 datasheet
0.1. Size:91K sanyo
2sc3996.pdf 
Ordering number EN2509C NPN Triple Diffused Planar Silicon Transistor 2SC3996 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High reliability (adoption of HVP process). 2048B High breakdown voltage (VCBO=1500V). [2SC3996] Adoption of MBIT process. 1 Base 2 Collector 3
0.2. Size:104K sanyo
2sc3990.pdf
Ordering number EN2234C NPN Triple Diffused Planar Silicon Transistor 2SC3990 500V/35A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed. 2048B Wide ASO. [2SC3990] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PBL Specifications Absolute Maximum Ratings a
0.3. Size:112K sanyo
2sc3991.pdf
Ordering number EN2836 NPN Triple Diffused Planar Silicon Transistor 2SC3991 500V/50A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf=0.1 s typ). 2048B Wide ASO. [2SC3991] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PBL Specifications Absolute M
0.5. Size:106K sanyo
2sc3993.pdf
Ordering number EN2236D NPN Triple Diffused Planar Silicon Transistor 2SC3993 800V/16A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed. 2048B Wide ASO. [2SC3993] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PBL Specifications Absolute Maximum Ratings a
0.6. Size:85K sanyo
2sc3998.pdf
Ordering number EN2732 NPN Triple Diffused Planar Silicon Transistor 2SC3998 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2048B High reliability (adoption of HVP process). [2SC3998] Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6
0.7. Size:99K sanyo
2sc3994.pdf
Ordering number EN2828 NPN Triple Diffused Planar Silicon Transistor 2SC3994 800V/25A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf=0.1 s typ). 2048B Wide ASO. [2SC3994] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PBL Specifications Absolute M
0.8. Size:103K sanyo
2sc3992.pdf
Ordering number EN2235D NPN Triple Diffused Planar Silicon Transistor 2SC3992 800V/12A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed. 2048B Wide ASO. [2SC3992] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PBL Specifications Absolute Maximum Ratings a
0.9. Size:90K sanyo
2sc3995.pdf
Ordering number EN2508B NPN Triple Diffused Planar Silicon Transistor 2SC3995 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High reliability (adoption of HVP process). 2048B High breakdown voltage (VCBO=1500V). [2SC3995] Adoption of MBIT process. 1 Base 2 Collector 3
0.10. Size:1278K cn sps
2sc3997t7tl.pdf
2SC3997T7TL Silicon NPN Power Transistor DESCRIPTION High Switching Speed High Breakdown Voltage- V = 1500V(Min) (BR)CBO APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V Collector-Emitter Voltage 800 V CEO V Emitter-Base Voltage 6 V EBO I Collector
0.11. Size:1278K cn sps
2sc3998t7tl.pdf
2SC3998T7TL Silicon NPN Power Transistor DESCRIPTION High Switching Speed High Breakdown Voltage- V = 1500V(Min) (BR)CBO APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V Collector-Emitter Voltage 800 V CEO V Emitter-Base Voltage 6 V EBO I Collector
0.12. Size:420K cn sptech
2sc3997.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3997 DESCRIPTION High Switching Speed High Breakdown Voltage- V = 1500V(Min) (BR)CBO APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V Collector-Emitter Voltage 800 V CEO V Emitter-Ba
0.13. Size:170K cn sptech
2sc3998.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3998 DESCRIPTION High Switching Speed High Breakdown Voltage- V = 1500V(Min) (BR)CBO APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V Collector-Emitter Voltage 800 V CEO V Emitter-Ba
0.15. Size:211K inchange semiconductor
2sc3996.pdf
isc Silicon NPN Power Transistor 2SC3996 DESCRIPTION High Switching Speed High Breakdown Voltage V = 1500V(Min) (BR)CBO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO
0.16. Size:217K inchange semiconductor
2sc3990.pdf
isc Silicon NPN Power Transistor 2SC3990 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 500V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO
0.17. Size:217K inchange semiconductor
2sc3997.pdf
isc Silicon NPN Power Transistor 2SC3997 DESCRIPTION High Switching Speed High Breakdown Voltage- V = 1500V(Min) (BR)CBO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO
0.18. Size:192K inchange semiconductor
2sc3993.pdf
isc Product Specification isc Silicon NPN Power Transistor 2SC3993 DESCRIPTION High Switching Speed High Breakdown Voltage- V = 1100V(Min) (BR)CBO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS 800V/16A switching regulator applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag
0.19. Size:211K inchange semiconductor
2sc3998.pdf
isc Silicon NPN Power Transistor 2SC3998 DESCRIPTION High Switching Speed High Breakdown Voltage- V = 1500V(Min) (BR)CBO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO
0.20. Size:216K inchange semiconductor
2sc3994.pdf
isc Silicon NPN Power Transistor 2SC3994 DESCRIPTION High Switching Speed High Breakdown Voltage- V = 1100V(Min) (BR)CBO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1100 V CBO
0.21. Size:212K inchange semiconductor
2sc3992.pdf
isc Silicon NPN Power Transistor 2SC3992 DESCRIPTION High Switching Speed High Breakdown Voltage- V = 1100V(Min) (BR)CBO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1100 V CBO
0.22. Size:211K inchange semiconductor
2sc3995.pdf
isc Silicon NPN Power Transistor 2SC3995 DESCRIPTION High Switching Speed High Breakdown Voltage- V = 1500V(Min) (BR)CBO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO
Otros transistores... 2SC3988, 2SC3988L, 2SC3988M, 2SC3988N, 2SC3989, 2SC3989L, 2SC3989M, 2SC3989N, D882P, 2SC3990, 2SC3990L, 2SC3990M, 2SC3990N, 2SC3991, 2SC3991K, 2SC3991L, 2SC3991M
