2SC3991 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SC3991
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 300 W
   Tensión colector-base (Vcb): 800 V
   Tensión colector-emisor (Vce): 500 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 50 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 15 MHz
   Capacitancia de salida (Cc): 215 pF
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO264

Búsqueda de reemplazo de 2SC3991

- Selección ⓘ de transistores por parámetros

2SC3991 Datasheet (PDF)

..1. Size:112K sanyo
2sc3991.pdf pdf_icon

Ordering number:EN2836NPN Triple Diffused Planar Silicon Transistor2SC3991500V/50A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf=0.1 s typ).2048B Wide ASO.[2SC3991] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBLSpecificationsAbsolute M

8.1. Size:91K sanyo
2sc3996.pdf pdf_icon

Ordering number:EN2509CNPN Triple Diffused Planar Silicon Transistor2SC3996Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High reliability (adoption of HVP process).2048B High breakdown voltage (VCBO=1500V).[2SC3996] Adoption of MBIT process.1 : Base2 : Collector3 :

8.2. Size:104K sanyo
2sc3990.pdf pdf_icon

Ordering number:EN2234CNPN Triple Diffused Planar Silicon Transistor2SC3990500V/35A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed.2048B Wide ASO.[2SC3990] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBLSpecificationsAbsolute Maximum Ratings a

8.3. Size:81K sanyo
2sc3997.pdf pdf_icon

8.4. Size:106K sanyo
2sc3993.pdf pdf_icon

Ordering number:EN2236DNPN Triple Diffused Planar Silicon Transistor2SC3993800V/16A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed.2048B Wide ASO.[2SC3993] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBLSpecificationsAbsolute Maximum Ratings a

8.5. Size:85K sanyo
2sc3998.pdf pdf_icon

Ordering number:EN2732NPN Triple Diffused Planar Silicon Transistor2SC3998Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2048B High reliability (adoption of HVP process).[2SC3998] Adoption of MBIT process.20.03.35.02.03.40.6

8.6. Size:99K sanyo
2sc3994.pdf pdf_icon

Ordering number:EN2828NPN Triple Diffused Planar Silicon Transistor2SC3994800V/25A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf=0.1 s typ).2048B Wide ASO.[2SC3994] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBLSpecificationsAbsolute M

8.7. Size:103K sanyo
2sc3992.pdf pdf_icon

Ordering number:EN2235DNPN Triple Diffused Planar Silicon Transistor2SC3992800V/12A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed.2048B Wide ASO.[2SC3992] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBLSpecificationsAbsolute Maximum Ratings a

8.8. Size:90K sanyo
2sc3995.pdf pdf_icon

Ordering number:EN2508BNPN Triple Diffused Planar Silicon Transistor2SC3995Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High reliability (adoption of HVP process).2048B High breakdown voltage (VCBO=1500V).[2SC3995] Adoption of MBIT process.1 : Base2 : Collector3 :

8.9. Size:1278K cn sps
2sc3997t7tl.pdf pdf_icon

2SC3997T7TLSilicon NPN Power TransistorDESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Collector-Emitter Voltage 800 VCEOV Emitter-Base Voltage 6 VEBOI Collector

8.10. Size:1278K cn sps
2sc3998t7tl.pdf pdf_icon

2SC3998T7TLSilicon NPN Power TransistorDESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Collector-Emitter Voltage 800 VCEOV Emitter-Base Voltage 6 VEBOI Collector

8.11. Size:420K cn sptech
2sc3997.pdf pdf_icon

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3997DESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Collector-Emitter Voltage 800 VCEOV Emitter-Ba

8.12. Size:170K cn sptech
2sc3998.pdf pdf_icon

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3998DESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Collector-Emitter Voltage 800 VCEOV Emitter-Ba

8.13. Size:634K cn xch
2sc3998.pdf pdf_icon

2SC3998NPN Triple Diffused Planar Silicon TransistorDESCRIPTION High speed High breakdown voltage High reliability (adoption of HVP process).Collector Adoption of MBIT process.BasePINNING EmitterPIN DESCRIPTIONEC 1 Base BCollector;connected to Fig.1 simplified outline (TO-3PL) and symbol 2mounting base 3 Emitter

8.14. Size:211K inchange semiconductor
2sc3996.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC3996DESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage: V = 1500V(Min)(BR)CBOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBO

8.15. Size:217K inchange semiconductor
2sc3990.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC3990DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 500V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

8.16. Size:217K inchange semiconductor
2sc3997.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC3997DESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBO

8.17. Size:192K inchange semiconductor
2sc3993.pdf pdf_icon

isc Product Specificationisc Silicon NPN Power Transistor 2SC3993DESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1100V(Min)(BR)CBOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS800V/16A switching regulator applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag

8.18. Size:211K inchange semiconductor
2sc3998.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC3998DESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBO

8.19. Size:216K inchange semiconductor
2sc3994.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC3994DESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1100V(Min)(BR)CBOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1100 VCBO

8.20. Size:212K inchange semiconductor
2sc3992.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC3992DESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1100V(Min)(BR)CBOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1100 VCBO

8.21. Size:211K inchange semiconductor
2sc3995.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC3995DESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBO

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .