2SC4029 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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JMnic Product SpecificationSilicon NPN Power Transistors 2SC4029 DESCRIPTION With TO-3PL package Complement to type 2SA1553 APPLICATIONS Power amplifier applications Recommended for 120W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol 3

isc Silicon NPN Power Transistor 2SC4029DESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 230V(Min)(BR)CEOComplement to Type 2SA1553Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 120W high fidelity audio frequency ampl

Ordering number : EN2262D2SA1552 / 2SC4027SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon TransistorsHigh-Voltage Switching2SA1552 / 2SC4027ApplicationsApplications Converters, inverters, color TV audio output.Features Adoption of FBET, MBIT processes. High voltage and large current capacity. Ultrahigh-speed switching. Small and slim p

Ordering number:ENN2262BPNP/NPN Epitaxial Planar Silicon Transistors2SA1552/2SC4027High-Voltage Switching ApplicationsApplications Package Dimensions Converters, inverters, color TV audio output. unit:mm2045BFeatures [2SA1552/2SC4027]6.5 Adoption of FBET, MBIT processes.2.35.00.54 High voltage and large current capacity. Fast switching time. Small

Ordering number : EN2262F2SA1552/2SC4027Bipolar Transistorhttp://onsemi.com() () ( ) ( )160V, 1.5A, Low VCE sat PNP NPN Single TP/TP-FAApplications Converters, inverters, color TV audio outputFeatures Adoption of FBET, MBIT processes High voltage and large current capacity Ultrahigh-speed switching Small and slim package permitting 2SA1552 / 2SC402

Power Transistors2SC4026Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesHigh-speed switching 3.1 0.1High collector to base voltage VCBOWide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed to th

UNISONIC TECHNOLOGIES CO., LTD 2SC4027 NPN SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING APPLICATIONS 1 FEATURES TO-220* High voltage and large current capacity. * Fast switching time. 1TO-252 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC4027L-x-TA3-T 2SC4027G-x-TA3-T TO-220 B C E Tube2SC4027L-x-TN3-R 2SC4027G-

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4026 DESCRIPTION With TO-220Fa package High breakdown voltage High speed switching Wide area of safe operation (SOA) APPLICATIONS For high breakdown voltage high-speed switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolu

2SC4020Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-25(TO220)Symbol 2SC4020 Symbol Conditions 2SC4020 UnitUnit0.24.80.210.20.12.0VCBO 900 ICBO VCB=800V 100max AVVCEO 800 IEB

High hFELOW VCE (sat) 2SC4024Silicon NPN Epitaxial Planar TransistorApplication : DC-DC Converter, Emergency Lighting Inverter and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol Conditions 2SC4024Symbol 2SC4024 Unit Unit0.24.20.210.1c0.52.8ICBO VCB=100V 10maxVCBO 100 V AIEBO VE

isc Silicon NPN Power Transistor 2SC4026DESCRIPTION Collector-Base Breakdown Voltage-: V = 500V(Min.)(BR)CBOWide Area of Safe OperationHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNIT

isc Silicon NPN Power Transistor 2SC4020DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 0.7ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 800V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned switching regulator and general purposeapplications.ABSOLUTE

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4024DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh DC Current Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDC-DC converter,Emergency lighting Inverterand general purposeABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon NPN Power Transistor 2SC4027DESCRIPTIONHigh voltage and large current capacityUltrahigh-speed switchingSmall and slim package permitting100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationComplementary to 2SA1552APPLICATIONSConverters , inverters and color TV audio outputABSOLUTE MAXIMUM RATINGS(T