2SC4070
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC4070
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 0 kOhm
Resistencia Base-Emisor R2 = 22 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250(typ)
MHz
Capacitancia de salida (Cc): 3.7
pF
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta:
SPA
Búsqueda de reemplazo de transistor bipolar 2SC4070
2SC4070
Datasheet (PDF)
8.2. Size:73K sanyo
2sc4075.pdf
Ordering number:EN2532NPN Triple Diffused Planar Silicon Transistor2SC4075Color TV Chroma Outputand Audio Output ApplicationsApplications Package Dimensions Color TV chroma output, sound output and B/W TVunit:mmvideo output, audio output applications.2041A[2SC4075]4.510.0Features2.83.2 Highly resistant to breakdown and wide ASO. Micaless package facili
8.3. Size:25K sanken-ele
2sc4073.pdf
2SC4073Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator and General PurposeExternal Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC4073 Unit Symbol Conditions 2SC4073 Unit0.24.20.210.1c0.52.8VCBO 500 V VCB=500V 100max AICBO
8.4. Size:647K semtech
st2sc4073u.pdf
ST 2SC4073U NPN Silicon Epitaxial Planar Transistor General purpose amplifier and high voltage application Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value Unit Collector Base Voltage VCBO 120 V Collector Emitter Voltage VCEO 120 V Emitter Base Voltage VEBO 6 V Collector Current IC 1 A Peak Collector Current (Single pulse, tp = 300 s) ICP 2 A0.5 Ptot W T
8.5. Size:206K inchange semiconductor
2sc4073.pdf
isc Silicon NPN Power Transistor 2SC4073DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-
8.6. Size:216K inchange semiconductor
2sc4075.pdf
isc Silicon NPN Power Transistor 2SC4075DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV chroma output, sound output andB/W TV video output, audio output applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.