2SC4096 Todos los transistores

 

2SC4096 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC4096

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150 W

Tensión colector-base (Vcb): 1400 V

Tensión colector-emisor (Vce): 800 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 60

Empaquetado / Estuche: X104

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2SC4096 Datasheet (PDF)

4.1. 2sc4097gp.pdf Size:171K _update

2SC4096
2SC4096

CHENMKO ENTERPRISE CO.,LTD 2SC4097GP SURFACE MOUNT Medium Power NPN Transistor VOLTAGE 32 Volts CURRENT 0.5 Ampere APPLICATION * Medium Power Amplifier . FEATURE * Surface mount package. (SC-70/SOT-323) SC-70/SOT-323 * Low saturation voltage V * Low cob. Cob=6.0pF(Typ.) CE(sat)=0.4V(max.)(IC=500mA) * PC= 200mW (mounted on ceramic substrate). * High saturation current capability

4.2. 2sc4097-r.pdf Size:213K _update

2SC4096
2SC4096

MCC 2SC4097-P TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components 2SC4097-Q CA 91311 Phone: (818) 701-4933 2SC4097-R Fax: (818) 701-4939 Features • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) • High Icmax. Icmax=0.5A NPN Silicon • Low VCE(SAT). Optimal for low voltage operation.

 4.3. 2sc4097-p.pdf Size:213K _update

2SC4096
2SC4096

MCC 2SC4097-P TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components 2SC4097-Q CA 91311 Phone: (818) 701-4933 2SC4097-R Fax: (818) 701-4939 Features • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) • High Icmax. Icmax=0.5A NPN Silicon • Low VCE(SAT). Optimal for low voltage operation.

4.4. 2sc4097fra.pdf Size:932K _update

2SC4096
2SC4096

2SC4097FRA 2SC4097 Transistors AEC-Q101 Qualified Medium Power Transistor (32V, 0.5A) 2SC4097 2SC4097FRA Features External dimensions (Units : mm) 1) High ICMax. ICMax. = 0.5A 2SC4097FRA 2SC4097 2) Low VCE(sat). Optimal for low voltage operation. 2.0±0.2 1.3±0.1 0.9±0.1 3) Complements the 2SA1577. 2SA1577FRA 0.65 0.65 0.7±0.1 0.2 (1) (2) 0 ~ 0.1 (3) Structure A

 4.5. 2sc4098fra.pdf Size:978K _update

2SC4096
2SC4096

AEC-Q101 Qualified High-frequency Amplifier Transistor (25V, 50mA, 300MHz) 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K 2SC5659FHA / 2SC4618FRA / 2SC4098FRA / 2SC2413K Features Dimensions (Unit : mm) 1) Low collector capacitance. (Cob : Typ. 1.3pF) 2SC5659FHA 2SC5659 1.2 2) Low rbb, high gain, and excellent noise characteristics. 0.2 0.8 0.2 (2) (3) (1) (1) Base 0.15Max.

4.6. 2sc4097-q.pdf Size:213K _update

2SC4096
2SC4096

MCC 2SC4097-P TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components 2SC4097-Q CA 91311 Phone: (818) 701-4933 2SC4097-R Fax: (818) 701-4939 Features • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) • High Icmax. Icmax=0.5A NPN Silicon • Low VCE(SAT). Optimal for low voltage operation.

4.7. 2sc4093.pdf Size:63K _nec

2SC4096
2SC4096

DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC4093 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4093 is an NPN silicon epitaxial transistor designed for low (Units: mm) noise amplifier at VHF, UHF and CATV band. +0.2 It has large dynamic range and good current characteritics, and is 2.8 -0.3 +0.2 1.5 -0.1 conta

4.8. 2sc4095.pdf Size:95K _nec

2SC4096
2SC4096

DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC4095 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4095 is an NPN epitaxial silicon transistor designed for use in (Units: mm) low-noise and small signal amplifiers from VHF band to UHF band. +0.2 2SC4095 features excellent power gain with very low-noise figures. 2.8 -0

4.9. ne856 2sc5011 2sc5006 2sc4226 2sc3355 2sc3603 2sc3356 2sc3357 2sc3603 2sc4093.pdf Size:257K _nec

2SC4096
2SC4096

NEC's NPN SILICON HIGH NE856 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz LOW NOISE FIGURE: 1.1 dB at 1 GHz HIGH COLLECTOR CURRENT: 100 mA HIGH RELIABILITY METALLIZATION 35 (MICRO-X) 00 (CHIP) LOW COST DESCRIPTION NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator applications. Low noise

4.10. 2sc5012 2sc5007 2sc4227 2sc3583 2sc3604 2sc4094 ne681.pdf Size:218K _nec

2SC4096
2SC4096

NEC's NPN SILICON HIGH NE681 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz LOW COST 00 (CHIP) 35 (MICRO-X) DESCRIPTION NEC's NE681 series of NPN epitaxial silicon transistors are designed for low noise, high gain, low cost amplifier applica- ti

4.11. ne680xx 2sc5013 2sc5008 2sc4228 2sc3585 2sc3587 2sc4095.pdf Size:247K _nec

2SC4096
2SC4096

NEC's NPN SILICON HIGH NE680 FREQUENCY TRANSISTOR SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE 00 (CHIP) 35 (MICRO-X) LOW CURRENT PERFORMANCE DESCRIPTION NEC's NE680 series of NPN epitaxial silicon transistors is designed for l

4.12. 2sc4094.pdf Size:95K _nec

2SC4096
2SC4096

DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC4094 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4094 is an NPN epitaxial silicon transistor designed for use in (Units: mm) low-noise and small signal amplifiers from VHF band to UHF band. Low- +0.2 noise figure, high gain, and high current capability achieve a very w

4.13. 2sc4092.pdf Size:102K _nec

2SC4096
2SC4096

DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC4092 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4092 is an NPN silicon epitaxial transistor designed for low- (Units: mm) noise amplifier at VHF, UHF band. +0.2 It is contained in 4 pins mini-mold package which enables high-isolation 2.8 -0.3 +0.2 1.5 -0.1 ga

4.14. 2sc2351 2sc2149 2sc4092 ne02133 ne02135 ne02139.pdf Size:171K _nec

2SC4096
2SC4096

NEC's NPN SILICON HIGH NE021 FREQUENCY TRANSISTOR SERIES FEATURES HIGH INSERTION GAIN: 18.5 dB at 500 MHz LOW NOISE FIGURE: 1.5 dB at 500 MHz HIGH POWER GAIN: 12 dB at 2 GHz LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION 00 (CHIP) 07/07B NEC's NE021 series of NPN silicon transistors provides eco- nomical solutions to wide ranges of amplifier and oscillat

4.15. 2sc5659 2sc4618 2sc4098 2sc2413k.pdf Size:140K _rohm

2SC4096
2SC4096

High-frequency Amplifier Transistor (25V, 50mA, 300MHz) 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K ?Features ?Dimensions (Unit : mm) 1) Low collector capacitance. (Cob : Typ. 1.3pF) 2SC5659 1.2 2) Low rbb, high gain, and excellent noise characteristics. 0.2 0.8 0.2 (2) (3) (1) (1) Base 0.15Max. ROHM : VMT3 (2) Emitter ?Absolute maximum ratings (Ta=25?C) (3) Collector Parameter S

4.16. 2sc4097.pdf Size:72K _rohm

2SC4096
2SC4096

2SC4097 Transistors Medium Power Transistor (32V, 0.5A) 2SC4097 Features External dimensions (Units : mm) 1) High ICMax. ICMax. = 0.5A 2SC4097 2) Low VCE(sat). Optimal for low voltage operation. 2.00.2 1.30.1 0.90.1 3) Complements the 2SA1577. 0.65 0.65 0.70.1 0.2 (1) (2) 0 ~ 0.1 (3) Structure All terminals have same dimensions 0.3+0.1 0.150.05 Epitaxial plan

4.17. 2sc4097.pdf Size:988K _secos

2SC4096
2SC4096

2SC4097 0.5A , 32V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES High ICMax. ICMax=0.5A. Low VCE(sat). Optimal for low voltage operation. A L Complementary to 2SA1577 3 3 Top View C B 1 1 2 2 K E MECHANICAL DATA D Terminals: Solderable per MIL-STD-202, Met

4.18. 2sc4098.pdf Size:77K _secos

2SC4096

2SC4098 0.05A , 40V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-323 ? Low Collector Capacitance. ? High Gain. A L 3 3 Top View C B 1 CLASSIFICATION OF hFE 1 2 2 K E Product-Rank 2SC4098-N 2SC4098-P 2SC4098-Q D Range 56~120 82~180 120~270 H J F G Marking AN AP

4.19. 2sc4097.pdf Size:1194K _htsemi

2SC4096

2SC4097 TRANSISTOR (NPN) SOT-323 3 FEATURES High ICMax. ICMax=0.5A 1 Low VCE(sat).Optimal for low voltage operation. 2 Complements the 2SA1577 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25?unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector C

4.20. 2sc4098.pdf Size:402K _htsemi

2SC4096

2 SC4098 TRANSISTOR (NPN) FEATURES SOT–323 ? Low Collector Capacitance ? High Gain MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBO 1. BASE V Collector-Emitter Voltage 25 V 2. EMITTER CEO 3. COLLECTOR V Emitter-Base Voltage 5 V EBO I Collector Current 50 mA C P Collector Power Dissipation 200 mW C R

4.21. 2sc4097 sot-323.pdf Size:246K _lge

2SC4096
2SC4096

2SC4097 SOT-323 Transistor(NPN) 1. BASE SOT-323 2. EMITTER 3. COLLECTOR Features High ICMax. ICMax=0.5A Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1577 MAXIMUM RATINGS (TA=25?unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V Dimensions in inches and (millimeters) VEBO Emitt

4.22. 2sc4097.pdf Size:911K _kexin

2SC4096
2SC4096

SMD Type Transistors NPN Transistors 2SC4097 ■ Features ● High ICMax.ICMax. = 0.5A ● Low VCE(sat). ● Complementary to 2SA1577 1 Base 2 Emitter 3 Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 32 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 0.5 A

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