2SC4099 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Power Transistors2SC4096Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm 3.3 0.220.0 0.5 5.0 0.33.0FeaturesHigh-speed switchingHigh collector to base voltage VCBOWide area of safe operation (ASO) 1.5Satisfactory linearity of foward current transfer ratio hFE1.52.0 0.32.7 0.33.0 0.3Absolute Maximum R

NEC's NPN SILICON HIGH NE856FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT:fT = 7 GHz LOW NOISE FIGURE:1.1 dB at 1 GHz HIGH COLLECTOR CURRENT: 100 mA HIGH RELIABILITY METALLIZATION35 (MICRO-X)00 (CHIP) LOW COSTDESCRIPTIONNEC's NE856 series of NPN epitaxial silicon transistors isdesigned for low cost amplifier and oscillator application

DATA SHEETDATA SHEETSILICON TRANSISTOR2SC4094MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR4 PINS MINI MOLDDESCRIPTIONPACKAGE DIMENSIONSThe 2SC4094 is an NPN epitaxial silicon transistor designed for use in(Units: mm)low-noise and small signal amplifiers from VHF band to UHF band. Low-+0.2noise figure, high gain, and high current capability achieve a ver

NEC's NPN SILICON HIGH NE021FREQUENCY TRANSISTOR SERIESFEATURES HIGH INSERTION GAIN: 18.5 dB at 500 MHz LOW NOISE FIGURE: 1.5 dB at 500 MHz HIGH POWER GAIN: 12 dB at 2 GHz LARGE DYNAMIC RANGE: 19 dBm at 1 dB,2 GHz Gain CompressionDESCRIPTION00 (CHIP) 07/07BNEC's NE021 series of NPN silicon transistors provides eco-nomical solutions to wide ranges of amplifier a

DATA SHEETDATA SHEETSILICON TRANSISTOR2SC4095MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR4 PINS MINI MOLDDESCRIPTIONPACKAGE DIMENSIONSThe 2SC4095 is an NPN epitaxial silicon transistor designed for use in(Units: mm)low-noise and small signal amplifiers from VHF band to UHF band.+0.22SC4095 features excellent power gain with very low-noise figures.2.8

NEC's NPN SILICON HIGH NE680FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz LOW NOISE FIGURE:1.7 dB at 2 GHz2.6 dB at 4 GHz HIGH ASSOCIATED GAIN:12.5 dB at 2 GHz8.0 dB at 4 GHz EXCELLENT LOW VOLTAGE00 (CHIP) 35 (MICRO-X)LOW CURRENT PERFORMANCEDESCRIPTIONNEC's NE680 series of NPN epitaxial silicon transistors isdesigned for l

DATA SHEETDATA SHEETSILICON TRANSISTOR2SC4093MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR4 PINS MINI MOLDDESCRIPTIONPACKAGE DIMENSIONSThe 2SC4093 is an NPN silicon epitaxial transistor designed for low(Units: mm)noise amplifier at VHF, UHF and CATV band.+0.2It has large dynamic range and good current characteritics, and is2.8 -0.3+0.21.5 -0.1co

NEC's NPN SILICON HIGH NE681FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz LOW NOISE FIGURE:1.2 dB at 1 GHz1.6 dB at 2 GHz HIGH ASSOCIATED GAIN:15 dB at 1 GHz12 dB at 2 GHz LOW COST00 (CHIP) 35 (MICRO-X)DESCRIPTIONNEC's NE681 series of NPN epitaxial silicon transistors aredesigned for low noise, high gain, low cost amplifier a

DATA SHEETDATA SHEETSILICON TRANSISTOR2SC4092HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR4 PINS MINI MOLDDESCRIPTIONPACKAGE DIMENSIONSThe 2SC4092 is an NPN silicon epitaxial transistor designed for low-(Units: mm)noise amplifier at VHF, UHF band.+0.2It is contained in 4 pins mini-mold package which enables high-isolation2.8 -0.3+0.21.5 -0.1

2SC4097FRA2SC4097TransistorsAEC-Q101 QualifiedMedium Power Transistor (32V, 0.5A) 2SC40972SC4097FRA Features External dimensions (Units : mm) 1) High ICMax.ICMax. = 0.5A2SC4097FRA2SC40972) Low VCE(sat).Optimal for low voltage operation. 2.00.21.30.1 0.90.13) Complements the 2SA1577. 2SA1577FRA0.65 0.65 0.70.10.2(1) (2)0 ~ 0.1(3) Structure A

High-frequency Amplifier Transistor (25V, 50mA, 300MHz) 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K Features Dimensions (Unit : mm) 1) Low collector capacitance. (Cob : Typ. 1.3pF) 2SC56591.22) Low rbb, high gain, and excellent noise characteristics. 0.2 0.8 0.2(2)(3)(1)(1) Base0.15Max.ROHM : VMT3(2) EmitterAbsolute maximum ratings (Ta=25C) (3) Collector

2SC4097DatasheetMedium Power Transistor (32V, 500mA)lOutlinelParameter Value UMT3VCEO32VIC500mASOT-323SC-70 lFeaturesl1)High ICMax.lInner circuitl ICMax.=0.5A2)Low VCE(sat). Optimal for low voltage operation.3)Complements the 2SA1577.lApplicationlDRIVING CIRCUIT,LOW FREQUEN

AEC-Q101 QualifiedHigh-frequency Amplifier Transistor (25V, 50mA, 300MHz) 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K 2SC5659FHA / 2SC4618FRA / 2SC4098FRA / 2SC2413KFeatures Dimensions (Unit : mm) 1) Low collector capacitance. (Cob : Typ. 1.3pF) 2SC5659FHA2SC56591.22) Low rbb, high gain, and excellent noise characteristics. 0.2 0.8 0.2(2)(3)(1)(1) Base0.15Max.

2SC4098DatasheetDatasheetHigh frequency amplifier transistor (25V, 50mA, 300MHz)lOutlinel SOT-323 Parameter Value SC-70 VCEO25VIC50mAUMT3lFeatures lInner circuitl l1)Low collector capacitance. (Cob:Typ.1.3pF)lApplicationlHIGH FREQUENCY AMPLIFIER, FREQUENCY CONVERTERRF AMPLIFIER, LOCAL OSCILLATORlPackaging specifi

MCC2SC4097-PTMMicro Commercial Components20736 Marilla Street ChatsworthMicro Commercial Components2SC4097-QCA 91311Phone: (818) 701-49332SC4097-RFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) High Icmax. Icmax=0.5A NPN Silicon Low VCE(SAT). Optimal for low voltage operation.

MCC2SC4097-PTMMicro Commercial Components20736 Marilla Street ChatsworthMicro Commercial Components2SC4097-QCA 91311Phone: (818) 701-49332SC4097-RFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) High Icmax. Icmax=0.5A NPN Silicon Low VCE(SAT). Optimal for low voltage operation.

MCC2SC4097-PTMMicro Commercial Components20736 Marilla Street ChatsworthMicro Commercial Components2SC4097-QCA 91311Phone: (818) 701-49332SC4097-RFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) High Icmax. Icmax=0.5A NPN Silicon Low VCE(SAT). Optimal for low voltage operation.

2SC4097Features Low VCE(sat) Optimal for Low Voltage Operation Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1NPN Silicon Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSEpitaxial TransistorsCompliant. See Ordering Information)Maximum Ratings @ 25C Unless Otherwise Specified O

2SC4097 0.5A , 32V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURES High ICMax. ICMax=0.5A. Low VCE(sat). Optimal for low voltage operation. AL Complementary to 2SA1577 33Top View C B11 22K EMECHANICAL DATA D Terminals: Solderable per MIL-STD-202,

2SC4098 0.05A , 40V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-323 Low Collector Capacitance. High Gain. AL3 3Top View C B1CLASSIFICATION OF hFE 1 22K EProduct-Rank 2SC4098-N 2SC4098-P 2SC4098-QDRange 56~120 82~180 120~270H JF GMarking

2SC4097TRANSISTOR (NPN)SOT-323 3 FEATURES High ICMax. ICMax=0.5A 1 Low VCE(sat).Optimal for low voltage operation. 2 Complements the 2SA1577 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25unless otherwise noted) 3. COLLECTOR Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collec

2 SC4098TRANSISTOR (NPN)FEATURES SOT323 Low Collector Capacitance High Gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBO1. BASE V Collector-Emitter Voltage 25 V 2. EMITTER CEO3. COLLECTOR V Emitter-Base Voltage 5 V EBOI Collector Current 50 mA CP Collector Power Dissipation 200 m

2SC4097 SOT-323 Transistor(NPN)1. BASE SOT-3232. EMITTER 3. COLLECTOR Features High ICMax. ICMax=0.5A Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1577 MAXIMUM RATINGS (TA=25unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V Dimensions in inches and (millimeters)VEBO

SMD Type TransistorsNPN Transistors2SC4097 Features High ICMax.ICMax. = 0.5A Low VCE(sat). Complementary to 2SA15771 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 32 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 0.5 A

CHENMKO ENTERPRISE CO.,LTD2SC4097GPSURFACE MOUNT Medium Power NPN Transistor VOLTAGE 32 Volts CURRENT 0.5 AmpereAPPLICATION* Medium Power Amplifier .FEATURE* Surface mount package. (SC-70/SOT-323)SC-70/SOT-323* Low saturation voltage V* Low cob. Cob=6.0pF(Typ.)CE(sat)=0.4V(max.)(IC=500mA) * PC= 200mW (mounted on ceramic substrate).* High saturation current capability