2SC4119 Datasheet. Equivalente

 ..1. Size:38K  sanyo
 2sc4119.pdf

Ordering number EN2548B NPN Triple Diffused Planar Silicon Darlington Transistor 2SC4119 800V/15A Driver Applications Applications Package Dimensions Induction cookers. unit mm High-voltage , high-power switching. 2048A [2SC4119] Features High speed (adoption of MBIT process). High breakdown voltage (VCBO=1500V). On-chip damper diode. High reliability. E

 8.1. Size:213K  toshiba
 2sc4118.pdf

2SC4118 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4118 Audio Frequency Low Power Amplifier Applications Unit mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) Complementary to 2SA1588 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collec

 8.2. Size:334K  toshiba
 2sc4117.pdf

2SC4117 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4117 Audio Frequency General Purpose Amplifier Applications Unit mm High voltage VCEO = 120 V Excellent h linearity h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C High h h = 200 700 FE FE Low noise NF = 1dB (typ.), 10dB (max) Complementary to 2SA1587 Small package

 8.3. Size:726K  toshiba
 2sc4117gr 2sc4117bl.pdf

2SC4117 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4117 Audio Frequency General Purpose Amplifier Applications Unit mm AEC-Q101 Qualified (Note1) High voltage V = 120 V CEO Excellent h linearity h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C High h h = 200 to 700 FE FE Low noise NF = 1dB (typ.), 10dB (max) Complemen

 8.4. Size:318K  toshiba
 2sc4116.pdf

2SC4116 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4116 Audio Frequency General Purpose Amplifier Applications Unit mm High voltage and high current VCEO = 50 V, IC = 150 mA (max) Excellent hFE linearity hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) High hFE hFE = 70 700 Low noise NF = 1dB (typ.), 10dB (max) Complementary to 2SA1586

 8.5. Size:382K  toshiba
 2sc4116-o 2sc4116-y 2sc4116-gr 2sc4116-bl.pdf

2SC4116 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4116 Audio Frequency General Purpose Amplifier Applications Unit mm AEC-Q101 Qualified (Note1) High voltage and high current VCEO = 50 V, IC = 150 mA (max) Excellent h linearity h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C High h h = 70 to 700 FE FE Low noise NF = 1dB

 8.6. Size:88K  sanyo
 2sa1582 2sc4113.pdf

 8.7. Size:108K  sanyo
 2sc4110.pdf

Ordering number EN2475B NPN Triple Diffused Planar Silicon Transistor 2SC4110 400V/25A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed. 2022A Wide ASO. [2SC4110] Adoption of MBIT process. 15.6 3.2 4.8 14.0 2.0 1.6 1.4 2.0 0.6 1.0 1 2 3 1 Base 0.6 2 Collector 3 E

 8.8. Size:159K  rohm
 2sc4115s.pdf

Low Frequency Transistor (20V, 3A) 2SC4115S Features Dimensions(Unit mm) 1) Low VCE(sat). 2SC4115S VCE(sat) = 0.2V(Typ.) IC / IB = 2A / 0.1A 4 0.2 2 0.2 2) Excellent current gain characteristics. 3) Complements the 2SA1585S. Structure 0.45+0.15 -0.05 Epitaxial planar type NPN silicon transistor 0.45+0.15 2.5+0.4 0.5 -0.05 -0.1 5 Absolute maximum ratings (Ta

 8.9. Size:331K  mcc
 2sc4116-y.pdf

2SC4116-O MCC 2SC4116-Y Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SC4116-GR Micro Commercial Components CA 91311 Phone (818) 701-4933 2SC4116-BL Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN RoHS Compliant. See ordering information) Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisur

 8.10. Size:331K  mcc
 2sc4116-bl.pdf

2SC4116-O MCC 2SC4116-Y Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SC4116-GR Micro Commercial Components CA 91311 Phone (818) 701-4933 2SC4116-BL Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN RoHS Compliant. See ordering information) Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisur

 8.11. Size:331K  mcc
 2sc4116-o.pdf

2SC4116-O MCC 2SC4116-Y Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SC4116-GR Micro Commercial Components CA 91311 Phone (818) 701-4933 2SC4116-BL Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN RoHS Compliant. See ordering information) Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisur

 8.12. Size:307K  mcc
 2sc4115s-q.pdf

MCC 2SC4115S-Q Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SC4115S-R Micro Commercial Components CA 91311 Phone (818) 701-4933 2SC4115S-S Fax (818) 701-4939 Features Epoxy meets UL 94 V-0 flammability rating NPN Moisture Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates Plastic-Encapsulate RoHS Compliant. See orderin

 8.13. Size:331K  mcc
 2sc4116-gr.pdf

2SC4116-O MCC 2SC4116-Y Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SC4116-GR Micro Commercial Components CA 91311 Phone (818) 701-4933 2SC4116-BL Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN RoHS Compliant. See ordering information) Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisur

 8.14. Size:56K  panasonic
 2sc4111.pdf

Power Transistors 2SC4111 Silicon NPN triple diffusion planar type For horizontal deflection output Unit mm 3.3 0.2 20.0 0.5 5.0 0.3 3.0 Features High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) 1.5 Satisfactory linearity of foward current transfer ratio hFE 1.5 2.0 0.3 Absolute Maximum Ratings (TC=25 C) 2.7 0.3 3.0 0

 8.15. Size:71K  secos
 2sc4115.pdf

2SC4115 3A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES Small Flat Package 4 General Purpose Application Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) 1 2 3 B C A E CLASSIFICATION OF hFE(1) E C Product-Rank 2SC4115-Q 2SC4115-R 2SC411

 8.16. Size:160K  secos
 2sc4116.pdf

2SC4116 0.15A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURES High voltage and high current. A Excellent hFE linearity. L 3 High hFE. 3 Top View C B Low noise. 1 1 2 Complementary to 2SA1586 2 K E D CLASSIFICATION OF hFE H J F G P

 8.17. Size:1602K  jiangsu
 2sc4115.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SC4115 TRANSISTOR (NPN) SOT-89-3L FEATURES 1. BASE Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) 1 Excellent current gain characteristics. 2 2. COLLECTOR Complements to 2SA1585 3 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter

 8.18. Size:464K  jiangsu
 2sc4115s.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO 92S 2SC4115S TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR Low VCE(sat). 3. BASE Excellent Current Gain Characteristics. 1 2 3 Complements The 2SA1585S. Equivalent Circuit C4115S=Device code C4115 Solid dot = Green molding compound device, - if none, the norma

 8.19. Size:837K  jiangsu
 2sc4116.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC4116 TRANSISTOR (NPN) FEATURES High voltage and high current 1. BASE Excellent hFE linearity 2. EMITTER High hFE 3. COLLECTOR Low noise Complementary to 2SA1586 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V

 8.20. Size:1392K  htsemi
 2sc4115.pdf

2SC4115 TRANSISTOR (NPN) SOT-89 FEATURES Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) 1. BASE 1 Excellent current gain characteristics. 2 Complements to 2SA1585 2. COLLECTOR 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value Units VCBO 40 V Collector-Base Voltage VCEO 20 V Collector-Emitter Voltage VEBO 6 V

 8.21. Size:834K  htsemi
 2sc4116.pdf

2SC4116 TRANSISTOR (NPN) SOT-323 FEATURES High voltage and high current Excellent hFE linearity High hFE Low noise 1. BASE Complementary to 2SA1586 2. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Coll

 8.22. Size:1152K  lge
 2sc4115.pdf

2SC4115 SOT-89 Transistor(NPN) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 1.6 1.8 2 1.4 1.4 3. EMITTER 3 2.6 4.25 2.4 3.75 Features 0.8 MIN 0.53 Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 Excellent current gain characteristics. 1.5 3.0 Complements to 2SA1585 Dimensions in inches and (millimeter

 8.23. Size:276K  lge
 2sc4116 sot-323.pdf

2SC4116 SOT-323 Transistor(NPN) SOT-323 1. BASE 2. EMITTER 3. COLLECTOR Features High voltage and high current Excellent hFE linearity High hFE Low noise Complementary to 2SA1586 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50

 8.24. Size:202K  wietron
 2sc4116.pdf

2SC4116 General Purpose Transistor COLLECTOR 3 3 NPN Silicon P b Lead(Pb)-Free 1 1 2 BASE 2 SOT-323(SC-70) FEATURES EMITTER * High voltage and high current * Excellent hFE linearity * High hFE * Low noise * Complementary to 2SA1586 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage

 8.25. Size:249K  nell
 2sc4110b.pdf

RoHS 2SC4110B Series RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN triple diffusion planar transistor 25A/400V Switching Regulator Applications 15.6 0.4 4.8 0.2 9.6 2.0 0.1 3.2 0,1 TO-3P(B) 2 3 FEATURES +0.2 +0.2 0.65 1.05 -0.1 -0.1 High-speed switching High breakdown voltage and high reliability 5.45 0.1 5.45 0.1 1.4 Wide SOA (Safe Operation Area)

 8.26. Size:993K  kexin
 2sc4118.pdf

SMD Type Transistors NPN Transistors 2SC4118 Features Excellent hFE linearity hFE(2)=25(min) Complementary to 2SA1588 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 500 mA Ba

 8.27. Size:1663K  kexin
 2sc4117.pdf

SMD Type Transistors NPN Transistors 2SC4117 Features High voltage VCEO = 120 V High hFE hFE = 200 700 Low noise NF = 1dB (typ.), 10dB (max) Small package Complementary to 2SA1587 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 120

 8.28. Size:296K  kexin
 2sc4115.pdf

SMD Type Transistors NPN Transistors 2SC4115 1.70 0.1 Features Collector Current Capability IC=3A Collector Emitter Voltage VCEO=20V Complements to 2SA1585 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 20 V Emitter - Base

 8.29. Size:1131K  kexin
 2sc4116.pdf

SMD Type Transistors NPN Transistors 2SC4116 Features High voltage and high current High hFE hFE = 70 700 Low noise NF = 1dB (typ.), 10dB (max) Small package Complementary to 2SA1586 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50

 8.30. Size:386K  lzg
 2sc4115s-r.pdf

2SC4115S(3DG4115S) NPN /SILICON NPN TRANSISTOR /Purpose Low frequency amplifier. 2SA1585S(3CG1585S) Features Low V ,excellent current gain characteristics complementary pair with CE(sat) 2SA1585S(3CG1585S). /Absolute maximum ratings(Ta=25 )

 8.31. Size:386K  lzg
 2sc4115s-s.pdf

2SC4115S(3DG4115S) NPN /SILICON NPN TRANSISTOR /Purpose Low frequency amplifier. 2SA1585S(3CG1585S) Features Low V ,excellent current gain characteristics complementary pair with CE(sat) 2SA1585S(3CG1585S). /Absolute maximum ratings(Ta=25 )

 8.32. Size:157K  sunroc
 2sc4115c.pdf

SUNROC 2SC4115S TRANSISTOR (NPN) TO-92S FEATURES 1. EMITTER Power dissipation PD 0.3 W (Tamb=25 ) 2. COLLECTOR Collector current I CM 3 A 3. BASE Collector-base voltage V(BR)CBO 40 V Operating and storage junction temperature range 123 TJ, Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Sy

 8.33. Size:1290K  cn sps
 2sc4110t4tl.pdf

2SC4110T4TL Silicon NPN Power Transistor DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 500 V CBO V Collector-Emitter Volta

 8.34. Size:183K  cn sptech
 2sc4110l 2sc4110m 2sc4110n.pdf

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC4110 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 500 V

 8.35. Size:112K  inchange semiconductor
 2sc4110-f2.pdf

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4110 DESCRIPTION With TO-3 package Fast switching speed Wide area of safe operation High voltage,high reliability APPLICATIONS For switching regulator applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE

 8.36. Size:212K  inchange semiconductor
 2sc4116.pdf

isc Silicon NPN Power Transistor 2SC4116 DESCRIPTION With SOT-323 packaging High collector-base voltage High power dissipation Low saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO

 8.37. Size:211K  inchange semiconductor
 2sc4111.pdf

isc Silicon NPN Power Transistor 2SC4111 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

 8.38. Size:226K  inchange semiconductor
 2sc4110.pdf

isc Silicon NPN Power Transistor 2SC4110 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO