2SC4129 Datasheet. Equivalente

 ..1. Size:211K  inchange semiconductor
 2sc4129.pdf

isc Silicon NPN Power Transistor 2SC4129 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

 8.1. Size:89K  sanyo
 2sa1590 2sc4121.pdf

 8.2. Size:88K  sanyo
 2sc4125.pdf

 8.3. Size:93K  sanyo
 2sc4123.pdf

Ordering number EN2956 NPN Triple Diffused Planar Silicon Transistor 2SC4123 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SC4123] Adoption of MBIT process. 16.0 5.6 3.4 On-chip da

 8.4. Size:98K  sanyo
 2sc4124.pdf

Ordering number EN2962 NPN Triple Diffused Planar Silicon Transistor 2SC4124 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions Adoption of MBIT process. unit mm On-chip damper diode. 2039D High breakdown voltage (VCBO=1500V). [2SC4124] High speed (tf=100ns typ). 16.0 5.6 3.4 High reliability (Adoption of HV

 8.5. Size:47K  hitachi
 2sc4126.pdf

2SC4126 Silicon NPN Epitaxial Application VHF and UHF wide band amplifier Outline MPAK-4 2 3 1 1. Collector 4 2. Emitter 3. Base 4. Emitter 2SC4126 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 11 V Emitter to base voltage VEBO 2V Collector current IC 50 mA Collector power dissipation PC

 8.6. Size:216K  inchange semiconductor
 2sc4125.pdf

isc Silicon NPN Power Transistor 2SC4125 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for very high-definition color display horizontal deflection output applicaitions. ABSOLUTE MAXIMUM RATINGS(

 8.7. Size:215K  inchange semiconductor
 2sc4123.pdf

isc Silicon NPN Power Transistor 2SC4123 DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 8.8. Size:215K  inchange semiconductor
 2sc4124.pdf

isc Silicon NPN Power Transistor 2SC4124 DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a