2N2102 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N2102
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 120 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 60 MHz
Capacitancia de salida (Cc): 8 pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO5
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2N2102 Datasheet (PDF)
2n2102.pdf

2N2102EPITAXIAL PLANAR NPN GENERAL PURPOSE AMPLIFIER ANDSWITCHDESCRIPTION The 2N2102 is a silicon Planar Epitaxial NPNtransistor in Jedec TO-39 metal case. It isintended for a wide variety of small-signall andmedium power applications in military andindustrial equipments.TO-39INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collec
2n2102 .pdf

2N2102EPITAXIAL PLANAR NPN GENERAL PURPOSE AMPLIFIER ANDSWITCHDESCRIPTION The 2N2102 is a silicon Planar Epitaxial NPNtransistor in Jedec TO-39 metal case. It isintended for a wide variety of small-signall andmedium power applications in military andindustrial equipments.TO-39INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collec
2n2102.pdf

2N2102Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 65V dia.IC = 1A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3
Otros transistores... 2N2096 , 2N2097 , 2N2098 , 2N2099 , 2N21 , 2N2100 , 2N2100A , 2N2101 , 2SD1555 , 2N2102A , 2N2102L , 2N2102S , 2N2104 , 2N2104A , 2N2104S , 2N2105 , 2N2106 .
History: 2SD936 | DTA024EEB | ZTX454 | BF393 | DMC56603 | KRC407V
History: 2SD936 | DTA024EEB | ZTX454 | BF393 | DMC56603 | KRC407V



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