2SC4140 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SC4140 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol 2SC4140 Symbol Conditions 2SC4140 Unit Unit 0.2 4.8 0.4 15.6 0.1 9.6 2.0 VCBO 500 ICBO VCB=500V 100max

isc Silicon NPN Power Transistor 2SC4140 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

JMnic Product Specification Silicon NPN Power Transistors 2SC4149 DESCRIPTION With ITO-220 package Switching power transistor Low saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4148 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-e

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4149 DESCRIPTION With ITO-220 package Switching power transistor Low saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage

INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SC4148 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 40V(Min) CEO(SUS) Collector Current-I = 7A(Max.) C Low Collector Saturation Voltage V = 0.3V(Max.)@ I = 3.5A CE(sat) C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed f