2SC4143 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SC4143
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 50 W
   Tensión colector-base (Vcb): 1500 V
   Tensión colector-emisor (Vce): 800 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 160
Paquete / Cubierta: TO218

Búsqueda de reemplazo de transistor bipolar 2SC4143

2SC4143 Datasheet (PDF)

8.1. Size:148K jmnic
2sc4149.pdf

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4149 DESCRIPTION With ITO-220 package Switching power transistor Low saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 60 V

8.2. Size:190K jmnic
2sc4140.pdf

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4140 DESCRIPTION With TO-3PN package High voltage High speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=

8.3. Size:107K jmnic
2sc4148.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4148 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 60 V VCEO Collector-e

8.4. Size:25K sanken-ele
2sc4140.pdf

2SC4140Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol 2SC4140 Symbol Conditions 2SC4140 UnitUnit0.24.80.415.60.19.6 2.0VCBO 500 ICBO VCB=500V 100max

8.5. Size:116K inchange semiconductor
2sc4149.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4149 DESCRIPTION With ITO-220 package Switching power transistor Low saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage

8.6. Size:218K inchange semiconductor
2sc4140.pdf

isc Silicon NPN Power Transistor 2SC4140DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

8.7. Size:186K inchange semiconductor
2sc4148.pdf

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SC4148DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 40V(Min)CEO(SUS)Collector Current-I = 7A(Max.)CLow Collector Saturation Voltage: V = 0.3V(Max.)@ I = 3.5ACE(sat) C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned f

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: KSD13003ER | 2N6467

Liste

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