2N2102A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N2102A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 120 V
Tensión colector-emisor (Vce): 65 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 120 MHz
Capacitancia de salida (Cc): 8 pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO5
Búsqueda de reemplazo de transistor bipolar 2N2102A
2N2102A Datasheet (PDF)
2n2102.pdf
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2N2102EPITAXIAL PLANAR NPN GENERAL PURPOSE AMPLIFIER ANDSWITCHDESCRIPTION The 2N2102 is a silicon Planar Epitaxial NPNtransistor in Jedec TO-39 metal case. It isintended for a wide variety of small-signall andmedium power applications in military andindustrial equipments.TO-39INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collec
2n2102 .pdf
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2N2102EPITAXIAL PLANAR NPN GENERAL PURPOSE AMPLIFIER ANDSWITCHDESCRIPTION The 2N2102 is a silicon Planar Epitaxial NPNtransistor in Jedec TO-39 metal case. It isintended for a wide variety of small-signall andmedium power applications in military andindustrial equipments.TO-39INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collec
2n2102-a.pdf
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145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n2102.pdf
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2N2102Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 65V dia.IC = 1A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3
2n2102.pdf
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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR TRANSISTOR 2N2102TO-39Metal Can PackageAmplifier TransistorABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITVCEOCollector Emitter Voltage 65 VCollector Emitter Voltage, RBE
Otros transistores... 2N2097 , 2N2098 , 2N2099 , 2N21 , 2N2100 , 2N2100A , 2N2101 , 2N2102 , BD135 , 2N2102L , 2N2102S , 2N2104 , 2N2104A , 2N2104S , 2N2105 , 2N2106 , 2N2107 .
History: TI801
History: TI801
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