2SC4148 Datasheet. Equivalente

 ..1. Size:107K  jmnic
 2sc4148.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4148 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-e

 ..2. Size:186K  inchange semiconductor
 2sc4148.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SC4148 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 40V(Min) CEO(SUS) Collector Current-I = 7A(Max.) C Low Collector Saturation Voltage V = 0.3V(Max.)@ I = 3.5A CE(sat) C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed f

 8.1. Size:148K  jmnic
 2sc4149.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC4149 DESCRIPTION With ITO-220 package Switching power transistor Low saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V

 8.2. Size:190K  jmnic
 2sc4140.pdf

 8.3. Size:25K  sanken-ele
 2sc4140.pdf

2SC4140 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol 2SC4140 Symbol Conditions 2SC4140 Unit Unit 0.2 4.8 0.4 15.6 0.1 9.6 2.0 VCBO 500 ICBO VCB=500V 100max

 8.4. Size:116K  inchange semiconductor
 2sc4149.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4149 DESCRIPTION With ITO-220 package Switching power transistor Low saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage

 8.5. Size:218K  inchange semiconductor
 2sc4140.pdf

isc Silicon NPN Power Transistor 2SC4140 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER