2SC4156S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Ordering number EN2535 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1606/2SC4159 High-Voltage Switching, AF 100W Driver Applications Applications Package Dimensions High-voltage switching, AF power amplifier, 100W unit mm output predrivers. 2041 [2SA1606/2SC4159] Features Micaless package facilitating mounting. E Emitter C Collector B Base ( ) 2SA1606 SANYO

Power Transistors 2SC4152 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 High-speed switching High collector to base voltage VCBO 3.1 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to th

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JMnic Product Specification Silicon NPN Power Transistors 2SC4150 DESCRIPTION With ITO-220 package Switching power transistor Low saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V

JMnic Product Specification Silicon NPN Power Transistors 2SC4151 DESCRIPTION With ITO-220 package Switching power transistor Low saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V

JMnic Product Specification Silicon NPN Power Transistors 2SC4153 DESCRIPTION With TO-220F package Switching transistor APPLICATIONS For humidifier ,DC-DC converter and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) S

JMnic Product Specification Silicon NPN Power Transistors 2SC4157 DESCRIPTION With TO-3P(I) package High VCEO High speed switching APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and sym

2SC4153 Silicon NPN Triple Diffused Planar Transistor ( Switchihg Transistor) Application Humidifier, DC-DC Converter, and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SC4153 Symbol Conditions 2SC4153 Unit 4.2 Unit 0.2 0.2 10.1 c0.5 2.8 VCBO 200 ICBO VCB=200V 100max A V VCEO 120 IEBO VEB=

2SC4155(3DG4155) 2SC4155A(3DG4155A) NPN /SILICON NPN TRANSISTOR /Purpose For hybrid IC,small type machine low frequency voltage amplify application. - Vce sat =0.3Vmax SOT-23 ( ) /Feature Small collectoe to e

INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SC4150 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 40V(Min) CEO(SUS) Collector Current-I = 12A(Max.) C Low Collector Saturation Voltage V = 0.3V(Max.)@ I = 6A CE(sat) C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed fo

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4159 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 160V (Min) (BR)CEO Large Current Capacity Complement to Type 2SA1606 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage switching, AF power amplifier, 100W o

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4151 DESCRIPTION With ITO-220 package Switching power transistor Low saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4153 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I =3A CE(sat) C Collector-Emitter Breakdown Voltage- V = 120V (Min) (BR)CEO Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humid

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4157 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 450V(Min) (BR)CEO High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter app