2SC4157 Datasheet. Equivalente

 ..1. Size:125K  toshiba
 2sc4157.pdf

 ..2. Size:148K  jmnic
 2sc4157.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC4157 DESCRIPTION With TO-3P(I) package High VCEO High speed switching APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and sym

 ..3. Size:186K  inchange semiconductor
 2sc4157.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4157 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 450V(Min) (BR)CEO High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter app

 8.1. Size:104K  sanyo
 2sa1606 2sc4159.pdf

Ordering number EN2535 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1606/2SC4159 High-Voltage Switching, AF 100W Driver Applications Applications Package Dimensions High-voltage switching, AF power amplifier, 100W unit mm output predrivers. 2041 [2SA1606/2SC4159] Features Micaless package facilitating mounting. E Emitter C Collector B Base ( ) 2SA1606 SANYO

 8.2. Size:76K  sanyo
 2sc4156.pdf

 8.3. Size:59K  panasonic
 2sc4152.pdf

Power Transistors 2SC4152 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 High-speed switching High collector to base voltage VCBO 3.1 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to th

 8.4. Size:93K  isahaya
 2sc4155.pdf

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

 8.5. Size:153K  isahaya
 2sc4154.pdf

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION

 8.6. Size:148K  jmnic
 2sc4150.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC4150 DESCRIPTION With ITO-220 package Switching power transistor Low saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V

 8.7. Size:148K  jmnic
 2sc4151.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC4151 DESCRIPTION With ITO-220 package Switching power transistor Low saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V

 8.8. Size:180K  jmnic
 2sc4153.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC4153 DESCRIPTION With TO-220F package Switching transistor APPLICATIONS For humidifier ,DC-DC converter and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) S

 8.9. Size:24K  sanken-ele
 2sc4153.pdf

2SC4153 Silicon NPN Triple Diffused Planar Transistor ( Switchihg Transistor) Application Humidifier, DC-DC Converter, and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SC4153 Symbol Conditions 2SC4153 Unit 4.2 Unit 0.2 0.2 10.1 c0.5 2.8 VCBO 200 ICBO VCB=200V 100max A V VCEO 120 IEBO VEB=

 8.10. Size:249K  blue-rocket-elect
 2sc4155a.pdf

2SC4155(3DG4155) 2SC4155A(3DG4155A) NPN /SILICON NPN TRANSISTOR /Purpose For hybrid IC,small type machine low frequency voltage amplify application. - Vce sat =0.3Vmax SOT-23 ( ) /Feature Small collectoe to e

 8.11. Size:184K  inchange semiconductor
 2sc4150.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SC4150 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 40V(Min) CEO(SUS) Collector Current-I = 12A(Max.) C Low Collector Saturation Voltage V = 0.3V(Max.)@ I = 6A CE(sat) C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed fo

 8.12. Size:189K  inchange semiconductor
 2sc4159.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4159 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 160V (Min) (BR)CEO Large Current Capacity Complement to Type 2SA1606 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage switching, AF power amplifier, 100W o

 8.13. Size:116K  inchange semiconductor
 2sc4151.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4151 DESCRIPTION With ITO-220 package Switching power transistor Low saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage

 8.14. Size:191K  inchange semiconductor
 2sc4153.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4153 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I =3A CE(sat) C Collector-Emitter Breakdown Voltage- V = 120V (Min) (BR)CEO Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humid