2SC4171 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC4171
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40 W
Tensión colector-base (Vcb): 800 V
Tensión colector-emisor (Vce): 500 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 18 MHz
Capacitancia de salida (Cc): 40 pF
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta: DPAK
Búsqueda de reemplazo de transistor bipolar 2SC4171
2SC4171 Datasheet (PDF)
2sc4172.pdf
Ordering number:EN2546ANPN Triple Diffused Planar Silicon Transistor2SC4172500V/5A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 800V).unit:mm Fast switching speed.2049C Wide ASO.[2SC4172] Suitable for sets whose height is restricted.10.24.51.31.20.80.41 2 3 1 : Base2 : Collector3 : Emitter2.55 2
2sc4177.pdf
2SC4177 0.1A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323FEATURES High DC Current Gain. AL High Voltage. 33 Complementary to 2SA1611 Top View C B 11 22K EAPPLICATIONS General Purpose Amplification DH JF GCLASSIFICATION OF hFE M
2sc4177.pdf
2SC4177TRANSISTOR (NPN)FEATURES High DC Current Gain SOT323 Complementary to 2SA1611 High Voltage APPLICATIONS General Purpose Amplification MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 60 V CBO3. COLLECTOR V Collector-Emitter Voltage 50 V CEOV Emitter-Base Voltage
2sc4177.pdf
SMD Type TransistorsNPN Transistors2SC4177 Features High DC Current Gain:hFE=200(typ) High Voltage:VCEO=50V Complementary to 2SA16111 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 5 Collector Current - Conti
2sc4177l4 2sc4177l5 2sc4177l6 2sc4177l7.pdf
2SC4177NPN Plastic-Encapsulate TransistorsEncapsulate Transistors FEATURES High DC Current Gain Complementary to 2SA1611 High Voltage APPLICATIONS General Purpose Amplification MAXIMUM RATINGS (Ta=25 unless otherwise noted) unless otherwise noted)ELECTRICAL CHARACTERISTICS (Ta=25ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) *Pulse test
2sc4177l4 2sc4177l5 2sc4177l6 2sc4177l7.pdf
2SC41772SC41772SC41772SC4177TRANSISTOR(NPN)2SC417 7FEATURESSOT323 3 High DC Current Gain Complementary to 2SA1611 High Voltage 1. BASE 12. EMITTER APPLICATIONS23. COLLECTOR General Purpose Amplification MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBOV Collector-Emitter Vo
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SC1851 | 2N3184
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050