2SC4187 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC4187
Código: R6A_R6B_R6C
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.08 W
Tensión colector-base (Vcb): 15 V
Corriente del colector DC máxima (Ic): 0.005 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3000 MHz
Ganancia de corriente contínua (hfe): 350
Paquete / Cubierta: TO236
Búsqueda de reemplazo de transistor bipolar 2SC4187
2SC4187 Datasheet (PDF)
2sc4187.pdf
DATA SHEET SILICON TRANSISTOR 2SC4187 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4187 is designed primarily for use in low voltage and low PACKAGE DIMENSIONS current application up to UHF band. The 2SC4187 is ideal for pagers, in millimeters electro-optic detector postamplifier applications, and other battery pow- 2.1 0.1 er
2sc4188.pdf
Ordering number EN2557B NPN Epitaxial Planar Silicon Transistor 2SC4188 Ultrahigh-Definition CRT Display Video Output Applications Features Package Dimensions High breakdown voltage VCEO 200V. unit mm Small reverse transfer capacitance and excellent high 2010C frequency characteristic Cre=1.3pF typ. [2SC4188] Adoption of FBET process. JEDEC TO220AB 1 Base EI
2sc4183.pdf
DATA SHEET SILICON TRANSISTOR 2SC4183 RF AMPLIFIER FOR UHF TV TUNER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4183 is specifically designed for UHF RF amplifier applica- PACKAGE DIMENSIONS tions. The 2SC4183 features high gain, low noise, and excellent forward in millimeters AGC characteristics in tiny plastic super mini mold package makes it 2.1 0.1 1.25
Otros transistores... 2SC4179 , 2SC4180 , 2SC4181 , 2SC4181A , 2SC4182 , 2SC4183 , 2SC4185 , 2SC4186 , TIP41 , 2SC4188 , 2SC4188C , 2SC4188D , 2SC4188E , 2SC4188F , 2SC4189 , 2SC4190 , 2SC4191 .
History: NB113F | KTD2854 | DCX114TH
History: NB113F | KTD2854 | DCX114TH
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