2SC4215 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC4215
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 30 V
Corriente del colector DC máxima (Ic): 0.02 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 550 MHz
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO236
Búsqueda de reemplazo de transistor bipolar 2SC4215
2SC4215 Datasheet (PDF)
2sc4215.pdf
2SC4215 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4215 High Frequency Amplifier Applications Unit: mm FM, RF, MIX, IF Amplifier Applications Small reverse transfer capacitance: Cre = 0.55 pF (typ.) Low noise figure: NF = 2dB (typ.) (f = 100 MHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 40 VCo
2sc4215.pdf
2SC4215 0.02A , 40V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-323 Small reverse transfer capacitanceCre = 0.55pF (typ.). A Low noise figureNF=2dB (typ.) (f=100 MHz) L3 3Top View C B1CLASSIFICATION OF hFE 1 22K EProduct-Rank 2SC4215-R 2SC42
2sc4215.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC4215 TRANSISTOR (NPN) FEATURES 1. BASE Small reverse transfer capacitance: Cre= 0.55pF(typ.) 2. EMITTER Low noise figure: NF=2dB (typ.) (f=100 MHz) 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base
2sc4215.pdf
2SC4215 TRANSISTOR (NPN) SOT-323 FEATURES Small reverse transfer capacitance: Cre= 0.55pF(typ.) Low noise figure: NF=2dB (typ.) (f=100 MHz) 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 4 VIC Collector Curre
2sc4215 sot-323.pdf
2SC4215 SOT-323 Transistor(NPN)SOT-3231. BASE 2. EMITTER 3. COLLECTOR Features Small reverse transfer capacitance: Cre= 0.55pF(typ.) Low noise figure: NF=2dB (typ.) (f=100 MHz) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 30 VVEBO
2sc4215.pdf
2SC4215NPN Silicon TransistorP b Lead(Pb)-Free3121. BASE2. EMITTERFEATURES:3. COLLECTORSOT-323(SC-70)* Power dissipationSOT-323 Outline Demensions Unit:mmASOT-323Dim Min MaxA 0.30 0.40B CTOP VIEWB 1.15 1.35C 2.00 2.40D - 0.65DE 0.30 0.40GEG 1.20 1.40HH 1.80 2.20J 0.00 0.10KK 0.80 1.00L 0.42 0.53LM 0.10 0.25J MWEITRON1/4 2
2sc4215-y.pdf
MCC2SC4215-RMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SC4215-OMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4215-YFax: (818) 701-4939Features Small reverse transfer capacitance: Cre= 0.55pF(typ.) Low V oise figure: NF=2dB (typ.) (f=100 MHz) NPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Complian
2sc4215-o.pdf
MCC2SC4215-RMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SC4215-OMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4215-YFax: (818) 701-4939Features Small reverse transfer capacitance: Cre= 0.55pF(typ.) Low V oise figure: NF=2dB (typ.) (f=100 MHz) NPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Complian
2sc4215-r.pdf
MCC2SC4215-RMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SC4215-OMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4215-YFax: (818) 701-4939Features Small reverse transfer capacitance: Cre= 0.55pF(typ.) Low V oise figure: NF=2dB (typ.) (f=100 MHz) NPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Complian
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: BDT85F | 2N6591
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050