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2SC4220 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC4220

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 50 W

Tensión colector-base (Vcb): 500 V

Tensión colector-emisor (Vce): 400 V

Corriente del colector DC máxima (Ic): 7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 50

Empaquetado / Estuche: TO218

Búsqueda de reemplazo de transistor bipolar 2SC4220

 

2SC4220 Datasheet (PDF)

1.1. 2sc4220.pdf Size:106K _sanyo

2SC4220
2SC4220

Ordering number:EN2825A NPN Triple Diffused Planar Silicon Transistor 2SC4220 400V/7A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit:mm Fast switching speed (tf=0.1 s typ). 2049C Wide ASO. [2SC4220] Adoption of MBIT process. 10.2 4.5 1.3 Suitable for sets whose height is restricted. 1.2 0.8 0.4 1 2 3 1

4.1. l2sc4226t1g.pdf Size:191K _upd

2SC4220
2SC4220

LESHAN RADIO COMPANY, LTD. L2SC4226T1G S-L2SC4226T1G 3 1 2 SC-70/SOT-323 DESCRIPTION The L2SC4226T1G is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied small mini mold package. We declare that the material of product compliance with RoHS requirements. S- Prefix

4.2. 2sc4222.pdf Size:95K _sanyo

2SC4220
2SC4220

Ordering number:EN2761A NPN Triple Diffused Planar Silicon Transistor 2SC4222 500V/5A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit:mm Fast switching speed (tf=0.1 s typ). 2049C Wide ASO. [2SC4222] Adoption of MBIT process. 10.2 4.5 1.3 Suitable for sets whose height is restricted. 1.2 0.8 0.4 1 2 3 1

 4.3. 2sc4223.pdf Size:93K _sanyo

2SC4220
2SC4220

Ordering number:EN2762A NPN Triple Diffused Planar Silicon Transistor 2SC4223 800V/1.5A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit:mm Fast switching speed (tf=0.1 s typ). 2049C Wide ASO. [2SC4223] Adoption of MBIT process. 10.2 4.5 1.3 Suitable for sets whose height is restricted. 1.2 0.8 0.4 1 2 3

4.4. 2sc4224.pdf Size:97K _sanyo

2SC4220
2SC4220

Ordering number:EN2763A NPN Triple Diffused Planar Silicon Transistor 2SC4224 800V/3A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit:mm Fast switching speed (tf=0.1 s typ). 2049C Wide ASO. [2SC4224] Adoption of MBIT process. 10.2 4.5 1.3 Suitable for sets whose height is restricted. 1.2 0.8 0.4 1 2 3 1

 4.5. 2sc4221.pdf Size:107K _sanyo

2SC4220
2SC4220

Ordering number:EN2816B NPN Triple Diffused Planar Silicon Transistor 2SC4221 500V/3A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit:mm Fast switching speed (tf=0.1 s typ). 2049C Wide ASO. [2SC4221] Adoption of MBIT process. 10.2 4.5 1.3 Suitable for sets whose height is restricted. 1.2 0.8 0.4 1 2 3 1

4.6. 2sc4226.pdf Size:105K _nec

2SC4220
2SC4220

DATA SHEET NPN SILICON RF TRANSISTOR 2SC4226 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold package. FEATURES

4.7. ne680xx 2sc5013 2sc5008 2sc4228 2sc3585 2sc3587 2sc4095.pdf Size:247K _nec

2SC4220
2SC4220

NEC's NPN SILICON HIGH NE680 FREQUENCY TRANSISTOR SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE 00 (CHIP) 35 (MICRO-X) LOW CURRENT PERFORMANCE DESCRIPTION NEC's NE680 series of NPN epitaxial silicon transistors is designed for l

4.8. 2sc4228.pdf Size:51K _nec

2SC4220
2SC4220

DATA SHEET SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4228 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier. It is suitable for a high density surface mount assembly since the 2.1 0.1 transistor has been applied super mini mold packag

4.9. 2sc5012 2sc5007 2sc4227 2sc3583 2sc3604 2sc4094 ne681.pdf Size:218K _nec

2SC4220
2SC4220

NEC's NPN SILICON HIGH NE681 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz LOW COST 00 (CHIP) 35 (MICRO-X) DESCRIPTION NEC's NE681 series of NPN epitaxial silicon transistors are designed for low noise, high gain, low cost amplifier applica- ti

4.10. 2sc4225.pdf Size:41K _nec

2SC4220
2SC4220

DATA SHEET SILICON TRANSISTOR 2SC4225 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4225 is an NPN silicon epitaxial transistor designed for low in millimeters noise amplifier at VHF through UHF band. 2.1 0.1 It has large dynamic range and good current characteristics. 1.25 0.1 FEATURES 2 Low Noise and Hig

4.11. ne856 2sc5011 2sc5006 2sc4226 2sc3355 2sc3603 2sc3356 2sc3357 2sc3603 2sc4093.pdf Size:257K _nec

2SC4220
2SC4220

NEC's NPN SILICON HIGH NE856 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz LOW NOISE FIGURE: 1.1 dB at 1 GHz HIGH COLLECTOR CURRENT: 100 mA HIGH RELIABILITY METALLIZATION 35 (MICRO-X) 00 (CHIP) LOW COST DESCRIPTION NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator applications. Low noise

4.12. 2sc4227.pdf Size:50K _nec

2SC4220
2SC4220

DATA SHEET SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier. 2.1 0.1 It is suitable for a high density surface mount assembly since the 1.25 0.1 transistor has been applied small mini

4.13. 2sc4226.pdf Size:252K _secos

2SC4220
2SC4220

2SC4226 0.1A , 20V NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE SOT-323 ? Low noise A ? High gain L 3 ? Power dissipation.(PC=150mW) 3 Top View C B 1 1 2 2 K E APPLICATIONS ? High frequency low noise amplifier. D H J F G CLASSIFICATION OF hFE Product-Rank 2

4.14. 2sc4226.pdf Size:933K _kexin

2SC4220
2SC4220

SMD Type Transistors NPN Transistors 2SC4226 ■ Features ● Collector Current Capability IC=100mA ● Collector Emitter Voltage VCEO=12V 1.Base 2.Emitter 3.Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage VEBO 3 Collector Current - Continuous IC 100 m

Otros transistores... 2SC4212 , 2SC4213 , 2SC4214 , 2SC4215 , 2SC4216 , 2SC4217 , 2SC4218 , 2SC4219 , 5609 , 2SC4221 , 2SC4222 , 2SC4223 , 2SC4224 , 2SC4229 , 2SC423 , 2SC4230 , 2SC4231 .

 
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