2SC4284 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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2SC4284 Datasheet (PDF)

4.1. 2sc4288a.pdf Size:40K _no

5.1. 2sc4215-o.pdf Size:269K _update

MCC 2SC4215-R Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SC4215-O Micro Commercial Components CA 91311 Phone: (818) 701-4933 2SC4215-Y Fax: (818) 701-4939 Features • Small reverse transfer capacitance: Cre= 0.55pF(typ.) • Low V oise figure: NF=2dB (typ.) (f=100 MHz) NPN Silicon • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Complian

5.2. 2sc4215-y.pdf Size:269K _update

MCC 2SC4215-R Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SC4215-O Micro Commercial Components CA 91311 Phone: (818) 701-4933 2SC4215-Y Fax: (818) 701-4939 Features • Small reverse transfer capacitance: Cre= 0.55pF(typ.) • Low V oise figure: NF=2dB (typ.) (f=100 MHz) NPN Silicon • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Complian

 5.3. 2sc4250fv.pdf Size:124K _update

2SC4250FV TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4250FV TV VHF Mixer Applications Unit: mm 1.2±0.05 • Low reverse transfer capacitance: Cre = 0.45 pF (typ.) 0.8±0.05 Absolute Maximum Ratings (Ta = 25°C) 1 Characteristic Symbol Rating Unit 2 3 Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 3 V Coll

5.4. 2sc4215-r.pdf Size:269K _update

MCC 2SC4215-R Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SC4215-O Micro Commercial Components CA 91311 Phone: (818) 701-4933 2SC4215-Y Fax: (818) 701-4939 Features • Small reverse transfer capacitance: Cre= 0.55pF(typ.) • Low V oise figure: NF=2dB (typ.) (f=100 MHz) NPN Silicon • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Complian

 5.5. l2sc4226t1g.pdf Size:191K _upd

LESHAN RADIO COMPANY, LTD. L2SC4226T1G S-L2SC4226T1G 3 1 2 SC-70/SOT-323 DESCRIPTION The L2SC4226T1G is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied small mini mold package. We declare that the material of product compliance with RoHS requirements. S- Prefix

5.6. 2sc4203.pdf Size:248K _toshiba

2SC4203 TOSHIBA Transistor Silicon Epitaxial Planar Type 2SC4203 Video Output for High Definition VDT Unit: mm High Speed Switching Applications • High transition frequency: fT = 400 MHz (typ.) (V = 10 V, I = 70 mA) CE C • Low output capacitance: C < 5 pF (max) (V = 30 V) ob CB • High voltage: V = 150 V CEO • High power dissipation: P = 10 W C Maximum Ratings

5.7. 2sc4246.pdf Size:305K _toshiba

2SC4246 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4246 TV Tuner, UHF Oscillator Applications (common base) Unit: mm TV Tuner, UHF Converter Applications (common base) • Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter vo

5.8. 2sc4207.pdf Size:242K _toshiba

2SC4207 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4207 Audio Frequency General Purpose Amplifier Applications Unit: mm • Small package (dual type) • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • High hFE: hFE = 120~700 • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • Complementary to 2SA1618 Absolut

5.9. 2sc4248.pdf Size:300K _toshiba

2SC4248 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4248 TV Tuner, UHF Oscillator Applications Unit: mm (common collector) • Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V

5.10. 2sc4249.pdf Size:262K _toshiba

2SC4249 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4249 TV VHF RF Amplifier Applications Unit: mm • High gain: Gpe = 24dB (typ.) (f = 200 MHz) • Low noise: NF = 2.0dB (typ.) (f = 200 MHz) • Excellent forward AGC characteristics Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter volta

5.11. 2sc4214.pdf Size:279K _toshiba

2SC4214 TOSHIBA Transistor Silicon NPN Planar Type 2SC4214 UHF TV Tuner RF Amplifier Applications Unit: mm • Low noise figure: NF = 2.8dB (typ.) • High power gain V = 4.5 V: G = 15dB (typ.) CC pb • Excellent forward AGC characteristics Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 25 V Collector-emitter voltage V

5.12. 2sc4251.pdf Size:296K _toshiba

2SC4251 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4251 TV Tuner, VHF Oscillator Applications Unit: mm Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 3 V Collector current IC 50 mA Base current IB 25 mA Collector power dissipation PC 100 mW Ju

5.13. 2sc4244.pdf Size:273K _toshiba

2SC4244 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4244 UHF TV Tuner RF Amplifier Applications Unit: mm • Low noise figure: NF = 4dB (typ.) • High power gain: Gpb = 17dB (typ.) • Excellent forward AGC characteristics Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 25 V Collector-emitter voltage VCEO 20

5.14. 2sc4247.pdf Size:302K _toshiba

2SC4247 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4247 TV Tuner, UHF Oscillator Applications Unit: mm (common collector) • Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V

5.15. 2sc4245.pdf Size:335K _toshiba

2SC4245 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4245 TV Tuner, UHF Mixer Applications Unit: mm VHF~UHF Band RF Amplifier Applications Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 3 V Collector current IC 50 mA Base current IB 25 mA Colle

5.16. 2sc4253.pdf Size:303K _toshiba

2SC4253 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4253 TV Final Picture IF Amplifier Applications Unit: mm • Good linearity of fT Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 4 V Collector current IC 50 mA Base current IB 25 mA Collector

5.17. 2sc4210.pdf Size:195K _toshiba

2SC4210 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4210 Audio Power Amplifier Applications Unit: mm • High DC current gain: hFE = 100~320 • Complementary to 2SA1621 Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 5 V Collector curre

5.18. 2sc4200.pdf Size:239K _toshiba



5.19. 2sc4250.pdf Size:347K _toshiba

2SC4250 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4250 TV VHF Mixer Applications Unit: mm • High conversion gain: Gce = 25dB (typ.) • Low reverse transfer capacitance: C = 0.45 pF (typ.) re Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO

5.20. 2sc4252.pdf Size:301K _toshiba

2SC4252 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4252 TV Tuner, VHF Oscillator Applications Unit: mm (common collector) • Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V

5.21. 2sc4213.pdf Size:289K _toshiba

2SC4213 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 For Muting and Switching Applications Unit: mm • High emitter-base voltage: VEBO = 25 V (min) • High reverse h : Reverse h = 150 (typ.) (V = -2 V, I = -4 mA) FE FE CE C • Low on resistance: R = 1 ? (typ.) (I = 5 mA) ON B • High DC current gain: hFE = 200~1200 • Small package Maximum Rati

5.22. 2sc4209.pdf Size:187K _toshiba

2SC4209 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4209 Driver Stage Amplifier Applications Unit: mm Voltage Amplifier Applications • Complementary to 2SA1620 Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 5 V Collector current IC 30

5.23. 2sc4215.pdf Size:290K _toshiba

2SC4215 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4215 High Frequency Amplifier Applications Unit: mm FM, RF, MIX, IF Amplifier Applications • Small reverse transfer capacitance: Cre = 0.55 pF (typ.) • Low noise figure: NF = 2dB (typ.) (f = 100 MHz) Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Co

5.24. 2sc4271.pdf Size:78K _sanyo

Ordering number:EN2710A NPN Epitaxial Planar Silicon Transistor 2SC4271 High-Definition CRT Display Video Output Applications Applications Package Dimensions � Wide-band amplifiers. unit:mm � High frequency drivers. 2009B [2SC7271] Features � High fT (fT=2.2GHz typ) � High current (IC=300mA) � Adoption of FBET process. 1 : Emitter JEDEC : TO-126 2 : Collector 3 : Base Speci

5.25. 2sc4217.pdf Size:88K _sanyo

Ordering number:EN2968 NPN Triple Diffused Planar Silicon Transistor 2SC4217 Color TV Chroma Output and Audio Output Applications Features Package Dimensions � High breakdown voltage (VCEO? 300V). unit:mm � Micaless package facilitating easy mounting. 2042A [2SC4217] B : Base C : Collector E : Emitter SANYO : TO-126ML Specifications Absolute Maximum Ratings at Ta = 25?C Paramete

5.26. 2sc4219.pdf Size:92K _sanyo

Ordering number:EN2709 NPN Triple Diffused Planar Silicon Transistor 2SC4219 400V/4A Switching Regulator Applications Features Package Dimensions � High breakdown voltage, high reliability unit:mm (VCEO? 400V). 2049C � Fast switching speed (tf=0.1� s typ). [2SC4219] � Wide ASO. 10.2 4.5 1.3 � Adoption of MBIT process. � Suitable for sets whose height is restricted. 1.2 0.8

5.27. 2sc4256.pdf Size:80K _sanyo

Ordering number:EN2924A NPN Triple Diffused Planar Silicon Transistor 2SC4256 1200V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions � High breakdown voltage. unit:mm � Small Cob. 2010C � Wide ASO. [2SC4256] � High reliability (Adoption of HVP process). 10.2 4.5 3.6 5.1 1.3 1.2 0.8 1 : Base 0.4 2 : Collector 1 2 3 3 : Emitter

5.28. 2sc4292.pdf Size:53K _sanyo

5.29. 2sc4221.pdf Size:107K _sanyo

Ordering number:EN2816B NPN Triple Diffused Planar Silicon Transistor 2SC4221 500V/3A Switching Regulator Applications Features Package Dimensions � High breakdown voltage, high reliability. unit:mm � Fast switching speed (tf=0.1� s typ). 2049C � Wide ASO. [2SC4221] � Adoption of MBIT process. 10.2 4.5 1.3 � Suitable for sets whose height is restricted. 1.2 0.8 0.4 1 2 3 1

5.30. 2sc4291.pdf Size:39K _sanyo

Ordering number:EN2679A NPN Triple Diffused Planar Silicon Transistor 2SC4291 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions � High speed (tf=0.3�s max). unit:mm � High breakdown voltage (VCBO=1500V). 2022A � High reliability (adoption of HVP process). [2SC4291] � Adoption of MBIT process. 15.6 3.2 4.8 14.0 2.0 � On-c

5.31. 2sc4269.pdf Size:107K _sanyo

Ordering number:EN2969A NPN Epitaxial Planar Silicon Transistor 2SC4269 VHF Converter, Local Oscillator Applications Features Package Dimensions � High power gain : PG=15dB typ (f=0.4GHz) unit:mm � High cutoff frequency : fT=1.2GHz typ 2018B [2SC4269] 0.4 0.16 3 0~0.1 1 0.95 2 0.95 1.9 2.9 1 : Base 2 : Emitter 3 : Collector SANYO : CP Specifications Absolute Maximum Ratin

5.32. 2sc4220.pdf Size:106K _sanyo

Ordering number:EN2825A NPN Triple Diffused Planar Silicon Transistor 2SC4220 400V/7A Switching Regulator Applications Features Package Dimensions � High breakdown voltage, high reliability. unit:mm � Fast switching speed (tf=0.1� s typ). 2049C � Wide ASO. [2SC4220] � Adoption of MBIT process. 10.2 4.5 1.3 � Suitable for sets whose height is restricted. 1.2 0.8 0.4 1 2 3 1

5.33. 2sc4272.pdf Size:94K _sanyo

Ordering number:EN2970 NPN Epitaxial Planar Silicon Transistor 2SC4272 27MHz CB Transceiver Driver Applications Features Package Dimensions � Small size making it easy to provide high-density, unit:mm small-sized hybrid ICs. 2038A [2SC4272] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Base 0.75 2 : Collector 3 : Emitter SANYO : PCP (Bottom view) Specifications Absolute Maximu

5.34. 2sc4224.pdf Size:97K _sanyo

Ordering number:EN2763A NPN Triple Diffused Planar Silicon Transistor 2SC4224 800V/3A Switching Regulator Applications Features Package Dimensions � High breakdown voltage, high reliability. unit:mm � Fast switching speed (tf=0.1� s typ). 2049C � Wide ASO. [2SC4224] � Adoption of MBIT process. 10.2 4.5 1.3 � Suitable for sets whose height is restricted. 1.2 0.8 0.4 1 2 3 1

5.35. 2sc4223.pdf Size:93K _sanyo

Ordering number:EN2762A NPN Triple Diffused Planar Silicon Transistor 2SC4223 800V/1.5A Switching Regulator Applications Features Package Dimensions � High breakdown voltage, high reliability. unit:mm � Fast switching speed (tf=0.1� s typ). 2049C � Wide ASO. [2SC4223] � Adoption of MBIT process. 10.2 4.5 1.3 � Suitable for sets whose height is restricted. 1.2 0.8 0.4 1 2 3

5.36. 2sc4204.pdf Size:106K _sanyo

Ordering number:EN2531A NPN Epitaxial Planar Silicon Transistor 2SC4204 High-hFE, AF Amplifier Applications Applications Package Dimensions � AF amplifier, various drivers. unit:mm 2003B Features [2SC4204] 5.0 � Adoption of MBIT process. 4.0 4.0 � High DC current gain (hFE=800 to 3200). � Large current capacity (IC=0.7A). � Low collector-to-emitter saturation voltage 0.45 (VCE

5.37. 2sc4293.pdf Size:92K _sanyo

Ordering number:EN2963 NPN Triple Diffused Planar Silicon Transistor 2SC4293 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions � High speed (tf=300ns max). unit:mm � High breakdown voltage (VCBO=1500V). 2039D � High reliability (adoption of HVP process). [2SC4293] � Adoption of MBIT process. 16.0 5.6 3.4 � On-chip damper d

5.38. 2sc4218.pdf Size:127K _sanyo

5.39. 2sc4222.pdf Size:95K _sanyo

Ordering number:EN2761A NPN Triple Diffused Planar Silicon Transistor 2SC4222 500V/5A Switching Regulator Applications Features Package Dimensions � High breakdown voltage, high reliability. unit:mm � Fast switching speed (tf=0.1� s typ). 2049C � Wide ASO. [2SC4222] � Adoption of MBIT process. 10.2 4.5 1.3 � Suitable for sets whose height is restricted. 1.2 0.8 0.4 1 2 3 1

5.40. 2sc4270.pdf Size:106K _sanyo

Ordering number:EN2971 NPN Epitaxial Planar Silicon Transistor 2SC4270 UHF Converter, Local Oscillator Applications Features Package Dimensions � Small noise figure : NF=3.0dB typ (f=0.9GHz) unit:mm � High power gain : PG=12dB typ (f=0.9GHz) 2018B � High cutoff frequency : fT=3.0GHz typ [2SC4270] 0.4 0.16 3 0~0.1 1 0.95 2 0.95 1.9 2.9 1 : Base 2 : Emitter 3 : Collector SA

5.41. 2sc4257.pdf Size:81K _sanyo

Ordering number:EN2925A NPN Triple Diffused Planar Silicon Transistor 2SC4257 1200V/30mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions � High breakdown voltage. unit:mm � Small Cob. 2010C � Wide ASO. [2SC4257] � High reliability (Adoption of HVP process). 10.2 4.5 3.6 5.1 1.3 1.2 1 : Base 0.8 0.4 2 : Collector 1 2 3 3 : Emitter

5.42. 2sc4227.pdf Size:50K _nec

DATA SHEET SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier. 2.1 � 0.1 It is suitable for a high density surface mount assembly since the 1.25 � 0.1 transistor has been applied small mini

5.43. 2sc4226.pdf Size:105K _nec

DATA SHEET NPN SILICON RF TRANSISTOR 2SC4226 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold package. FEATURES

5.44. 2sc4228.pdf Size:51K _nec

DATA SHEET SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4228 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier. It is suitable for a high density surface mount assembly since the 2.1 � 0.1 transistor has been applied super mini mold packag

5.45. ne856 2sc5011 2sc5006 2sc4226 2sc3355 2sc3603 2sc3356 2sc3357 2sc3603 2sc4093.pdf Size:257K _nec

NEC's NPN SILICON HIGH NE856 FREQUENCY TRANSISTOR SERIES FEATURES � HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz � LOW NOISE FIGURE: 1.1 dB at 1 GHz � HIGH COLLECTOR CURRENT: 100 mA � HIGH RELIABILITY METALLIZATION 35 (MICRO-X) 00 (CHIP) � LOW COST DESCRIPTION NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator applications. Low noise

5.46. 2sc5012 2sc5007 2sc4227 2sc3583 2sc3604 2sc4094 ne681.pdf Size:218K _nec

NEC's NPN SILICON HIGH NE681 FREQUENCY TRANSISTOR SERIES FEATURES � HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz � LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz � HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz � LOW COST 00 (CHIP) 35 (MICRO-X) DESCRIPTION NEC's NE681 series of NPN epitaxial silicon transistors are designed for low noise, high gain, low cost amplifier applica- ti

5.47. ne680xx 2sc5013 2sc5008 2sc4228 2sc3585 2sc3587 2sc4095.pdf Size:247K _nec

NEC's NPN SILICON HIGH NE680 FREQUENCY TRANSISTOR SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE 00 (CHIP) 35 (MICRO-X) LOW CURRENT PERFORMANCE DESCRIPTION NEC's NE680 series of NPN epitaxial silicon transistors is designed for l

5.48. 2sc4225.pdf Size:41K _nec

DATA SHEET SILICON TRANSISTOR 2SC4225 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4225 is an NPN silicon epitaxial transistor designed for low in millimeters noise amplifier at VHF through UHF band. 2.1 � 0.1 It has large dynamic range and good current characteristics. 1.25 � 0.1 FEATURES 2 � Low Noise and Hig

5.49. 2sc4208.pdf Size:47K _panasonic

Transistor 2SC4208, 2SC4208A Silicon NPN epitaxial planer type For low-frequency output amplification and driver amplification Unit: mm Complementary to 2SA1619 and 2SA1619A 5.0� 0.2 4.0� 0.2 Features Low collector to emitter saturation voltage VCE(sat). Output of 1W is obtained with a complementary pair with 2SA1619 and 2SA1619A. Allowing supply with the radial taping. 0.7� 0.1 Absol

5.50. 2sc4208 e.pdf Size:51K _panasonic

Transistor 2SC4208, 2SC4208A Silicon NPN epitaxial planer type For low-frequency output amplification and driver amplification Unit: mm Complementary to 2SA1619 and 2SA1619A 5.0� 0.2 4.0� 0.2 Features Low collector to emitter saturation voltage VCE(sat). Output of 1W is obtained with a complementary pair with 2SA1619 and 2SA1619A. Allowing supply with the radial taping. 0.7� 0.1 Absol

5.51. 2sc4212.pdf Size:60K _panasonic

Power Transistors 2SC4212 2SC4212 2SC4212 2SC4212 2SC4212 Silicon NPN triple diffusion planar type Unit: mm For color TV horizontal deflection driver 8.0+0.5 �0.1 3.2�0.2 ? 3.16�0.1 Features � High collector to emitter voltage VCEO � TO-126B package which requires no insulation plate for installa- tion to the heat sink Absolute Maximum Ratings TC = 25�C Parameter Symbol Rating

5.52. 2sc4238.pdf Size:63K _panasonic

5.53. 2sc4242.pdf Size:139K _utc

UNISONIC TECHNOLOGIES CO., LTD 2SC4242 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN POWER TRANSISTORS DESCRIPTION The UTC 2SC4242 is a high-voltage, high-speed switching power transistor and designed particularly for 115 and 220V switch mode applications, such as switching regulators, inverters, DC-DC converter and general purpose power amplifiers. FEATURES * Low saturatio

5.54. 2sc4273.pdf Size:111K _fuji

5.55. 2sc4275.pdf Size:113K _fuji

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

5.56. 2sc4274.pdf Size:116K _fuji

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

5.57. 2sc4276.pdf Size:111K _fuji

FUJI POWER TRANSISTOR 2SC4276 TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3P Features High voltage,High speed switching Low saturation voltage High reliability Applications Switching regulators DC-DC convertor JEDEC - Solid state relay EIAJ SC-65 General purpose power amplifiers Maximum ratings and characteristics Absolute maximum ratings (T

5.58. 2sc4264.pdf Size:24K _hitachi

2SC4264 Silicon NPN Epitaxial Application VHF / UHF RF amplifier, Local oscillator, Mixer Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4264 Absolute Maximum Ratings (Ta = 25�C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 11 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipation PC 100

5.59. 2sc4261.pdf Size:24K _hitachi

2SC4261 Silicon NPN Epitaxial Application UHF Local oscillator Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4261 Absolute Maximum Ratings (Ta = 25�C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 15 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipation PC 100 mW Junction temperature T

5.60. 2sc4262.pdf Size:24K _hitachi

2SC4262 Silicon NPN Epitaxial Application UHF / VHF Local oscillator Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4262 Absolute Maximum Ratings (Ta = 25�C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 15 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipation PC 100 mW Junction tempera

5.61. 2sc4260.pdf Size:24K _hitachi

2SC4260 Silicon NPN Epitaxial Application UHF frequency converter, Wide band amplifier Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4260 Absolute Maximum Ratings (Ta = 25�C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 13 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipation PC 100 mW

5.62. 2sc4265.pdf Size:24K _hitachi

2SC4265 Silicon NPN Epitaxial Application VHF RF amplifier, Local oscillator, Mixer Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4265 Absolute Maximum Ratings (Ta = 25�C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipation PC 100 mW J

5.63. 2sc4240.pdf Size:95K _mitsubishi

5.64. 2sc4242.pdf Size:120K _mospec

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5.65. 2sc4226.pdf Size:252K _secos

2SC4226 0.1A , 20V NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE SOT-323 ? Low noise A ? High gain L 3 ? Power dissipation.(PC=150mW) 3 Top View C B 1 1 2 2 K E APPLICATIONS ? High frequency low noise amplifier. D H J F G CLASSIFICATION OF hFE Product-Rank 2

5.66. 2sc4215.pdf Size:189K _secos

2SC4215 0.02A , 40V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-323 ? Small reverse transfer capacitance:Cre = 0.55pF (typ.). A ? Low noise figure:NF=2dB (typ.) (f=100 MHz) L 3 3 Top View C B 1 CLASSIFICATION OF hFE 1 2 2 K E Product-Rank 2SC4215-R 2SC4215-O 2SC421

5.67. 2sc4258.pdf Size:314K _isahaya

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http://www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN ??Keep safety in your circuit designs ! ? Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more re

5.68. 2sc4297.pdf Size:237K _jmnic

JMnic Product Specification Silicon NPN Power Transistors 2SC4297 DESCRIPTION ·With TO-3PML package ·High voltage ,high speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALU

5.69. 2sc4278.pdf Size:121K _jmnic

Power Transistors www.jmnic.com 2SC4278 Silicon NPN Transistors B C E Features With TO-247 package Complement to type 2SA1633 Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 150 V VCEO Collector to emitter voltage 150 V VCER Emitter to base voltage VEB Emitter to base voltage 5 V IB Base Current IC Collector current-Continuou

5.70. 2sc4299.pdf Size:237K _jmnic

JMnic Product Specification Silicon NPN Power Transistors 2SC4299 DESCRIPTION ·With TO-3PML package ·High voltage ,high switching speed ·Wide area of safe operation APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25?)

5.71. 2sc4298.pdf Size:233K _jmnic

JMnic Product Specification Silicon NPN Power Transistors 2SC4298 DESCRIPTION ·With TO-3PML package ·High voltage ,high speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALU

5.72. 2sc4297.pdf Size:25K _sanken-ele

2SC4297 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25�C) Electrical Characteristics (Ta=25�C) Symbol 2SC4297 Unit Symbol Conditions 2SC4297 Unit �0.2 �0.2 5.5 15.6 �0.2 3.45 VCBO V ICBO VCB=500V 100max � A 500 VCEO V

5.73. 2sc4299.pdf Size:25K _sanken-ele

2SC4299 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25�C) Electrical Characteristics (Ta=25�C) Symbol 2SC4299 Symbol Conditions 2SC4299 Unit Unit �0.2 �0.2 5.5 15.6 �0.2 3.45 VCBO 900 ICBO VCB=800V 100max � A V VCEO 800 IEBO VEB=7V

5.74. 2sc4296.pdf Size:25K _sanken-ele

2SC4296 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25�C) Electrical Characteristics (Ta=25�C) Symbol 2SC4296 Symbol Conditions 2SC4296 Unit Unit �0.2 �0.2 5.5 15.6 �0.2 3.45 VCBO 500 ICBO VCB=500V 100max V � A VCEO

5.75. 2sc4298.pdf Size:26K _sanken-ele

2SC4298 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25�C) Electrical Characteristics (Ta=25�C) 2SC4298 Symbol 2SC4298 Symbol Conditions Unit Unit �0.2 �0.2 5.5 15.6 �0.2 3.45 100max VCBO 500 ICBO VCB=500V � A V 100

5.76. 2sc4264.pdf Size:134K _inchange_semiconductor

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4264 DESCRIPTION ·Low Noise ·High Gain APPLICATIONS ·Designed for use in UHF ~VHF RF amplifier, local oscillator, mixer. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 11 V VEBO Emitter-Base Voltage 3.0 V IC C

5.77. 2sc4246.pdf Size:155K _inchange_semiconductor

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4246 DESCRIPTION ·High Current-Gain Bandwidth Product fT= 1500MHz TYP. @VCE = 10 V, IC = 8 mA ·Low Noise APPLICATIONS ·TV tuner , UHF oscillator applications ·TV tuner , UHF converter applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V

5.78. 2sc4273.pdf Size:116K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4273 DESCRIPTION · ·With TO-220C package · High voltage,high speed · Low saturation voltage · High reliability APPLICATIONS ·Switching regulators ·DC-DC convertor ·Solid state relay ·General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting

5.79. 2sc4261.pdf Size:210K _inchange_semiconductor

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4261 DESCRIPTION ·Low Noise ·High Gain APPLICATIONS ·Designed for use in UHF local oscillator. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current-Continuous

5.80. 2sc4227.pdf Size:207K _inchange_semiconductor

isc Silicon NPN RF Transistor 2SC4227 DESCRIPTION ·Low Noise NF = 1.4 dB TYP., @V = 3 V, I = 7 mA, f = 1.0 GHz CE C ·High Gain ︱S ︱2 = 12 dB TYP. @V = 3 V, I = 7 mA, f = 1.0 GHz 21e CE C ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for VHF, UHF low noise amplifier. ABSOLUTE MAXIMUM RATINGS(T =25℃)

5.81. 2sc4233.pdf Size:59K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4233 DESCRIPTION · ·With TO-220C package ·High breakdown voltage ·Switching power transistor PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1200 V

5.82. 2sc4226.pdf Size:861K _inchange_semiconductor

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4226 DESCRIPTION ·Low Collector Curren -I = 0.1A C ·Low Collector Power—Pc=0.1W With SOT-323 Package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for broadband low noise amplifier ; wideband low noise amplifie ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PA

5.83. 2sc4228.pdf Size:590K _inchange_semiconductor

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4228 DESCRIPTION ·High f T 8.0GHz TYP. @V = 3 V, I = 5 mA, f = 2 GHz CE C ·Low C re 0.3pF TYP., @V = 3 V, I = 0, f = 1 MHz CB E ·High ︱S ︱2 21e 7.5 dB TYP. @V = 3 V, I = 5 mA, f = 2 GHz CE C ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed f

5.84. 2sc4297.pdf Size:179K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3PML package Ў¤ High voltage ,high speed switching APPLICATIONS 2SC4297 Ў¤ For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL

5.85. 2sc4262.pdf Size:96K _inchange_semiconductor

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4262 DESCRIPTION ·Low Noise ·High Gain APPLICATIONS ·Designed for use in UHF~ VHF local oscillator. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current-Contin

5.86. 2sc4251.pdf Size:152K _inchange_semiconductor

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4251 DESCRIPTION ·High fT- fT = 1100 MHz TYP. ·Low Output Capacitance- COB = 0.9 pF TYP. APPLICATIONS ·Designed for TV tuner ,VHF oscillator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V

5.87. 2sc4275.pdf Size:260K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4275 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability ·Low Collector Saturation Voltage APPLICATIONS ·Switching regulators ·DC-DC converter ·Solid state relay ·General purpose power amplifiers ABSOLUTE MAXIMUM RA

5.88. 2sc4274.pdf Size:119K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4274 DESCRIPTION · ·With TO-220C package ·High voltage,high speed ·Low saturation voltage ·High reliability APPLICATIONS ·Switching regulators ·DC-DC convertor ·Solid state relay ·General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting bas

5.89. 2sc4234.pdf Size:309K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4234 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V(Min) ·Fast Switching speed APPLICATIONS ·Electronic ballasts for fluorescent lighting ·Switch mode power supplies ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCE

5.90. 2sc4247.pdf Size:157K _inchange_semiconductor

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4247 DESCRIPTION ·High Current-Gain Bandwidth Product fT= 4 GHz TYP. @VCE = 10 V, IC = 10 mA ·Low Noise APPLICATIONS ·Designed for TV tuner , UHF oscillator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Vol

5.91. 2sc4278.pdf Size:126K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4278 DESCRIPTION Ў¤ With TO-247 package Ў¤ Complement to type 2SA1633 Ў¤ High current and high power capability APPLICATIONS Ў¤ For audio output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-247) and symbol DESCRIPTION Ў¤ Absolut

5.92. 2sc4260.pdf Size:220K _inchange_semiconductor

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4260 DESCRIPTION ·Low Noise ·High Gain APPLICATIONS ·Designed for use in UHF frequency converter , wide band amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 13 V VEBO Emitter-Base Voltage 3.0 V IC C

5.93. 2sc4276.pdf Size:150K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4276 DESCRIPTION ·With TO-3PN package ·High voltage ,high speed ·Low collector saturation voltage ·High reliability APPLICATIONS ·Switching regulators ·DC-DC convertor ·Solid state relay ·General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 moun

5.94. 2sc4245.pdf Size:192K _inchange_semiconductor

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4245 DESCRIPTION ·High Current-Gain Bandwidth Product fT= 2400MHz TYP. @VCE = 10 V, IC = 2 mA ·Low Noise APPLICATIONS ·TV tuner , UHF mixer applications ·VHF~UHF band RF amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V

5.95. 2sc4299.pdf Size:180K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3PML package Ў¤ High voltage ,high switching speed Ў¤ Wide area of safe operation APPLICATIONS 2SC4299 Ў¤ For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION Absolute ma

5.96. 2sc4236.pdf Size:288K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4236 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V(Min) ·Fast Switching speed APPLICATIONS ·Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V

5.97. 2sc4205.pdf Size:56K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4205 DESCRIPTION · ·With TO-220C package ·High voltage ;high speed APPLICATIONS ·For use in high voltage and power switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNI

5.98. 2sc4230.pdf Size:268K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4230 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V(Min) ·Fast Switching speed APPLICATIONS ·Electronic ballasts for fluorescent lighting ·Switch mode power supplies ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCE

5.99. 2sc4265.pdf Size:139K _inchange_semiconductor

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4265 DESCRIPTION ·Low Noise ·High Gain APPLICATIONS ·Designed for use in VHF RF amplifier, local oscillator, mixer. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 3.0 V IC Collecto

5.100. 2sc4232.pdf Size:77K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4232 DESCRIPTION · ·With TO-247 package ·Switching power transistor ·High breakdown voltage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 Emitter Absolute maximum ratings(Tc=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT V

5.101. 2sc4250.pdf Size:195K _inchange_semiconductor

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4250 DESCRIPTION ·High Conversion Gain- Gce = 25 dB TYP. ·Low Reverse Transfer Capacitance- Cre = 0.45 pF TYP. APPLICATIONS ·Designed for TV VHF mixer applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Volta

5.102. 2sc4296.pdf Size:234K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4296 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collecto

5.103. 2sc4252.pdf Size:156K _inchange_semiconductor

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4252 DESCRIPTION ·High Current-Gain Bandwidth Product fT = 2.1 GHz TYP. ·Low Output Capacitance- COB = 1.1 pF TYP. APPLICATIONS ·Designed for TV tuner ,VHF oscillator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collect

5.104. 2sc4298.pdf Size:180K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3PML package Ў¤ High voltage ,high speed switching APPLICATIONS 2SC4298 Ў¤ For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL

5.105. 2sc4237.pdf Size:286K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4237 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V(Min) ·Fast Switching speed APPLICATIONS ·Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V

5.106. 2sc4235.pdf Size:327K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4235 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V(Min) ·Fast Switching speed APPLICATIONS ·Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V

5.107. 2sc4294.pdf Size:235K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4294 DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 1500V(Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Ultrahigh-definition color display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCB

5.108. 2sc4242.pdf Size:267K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4242 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·Fast Switching Speed ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max.)@ IC= 4.0A APPLICATIONS ·Designed for use in high-voltage, high-speed , power switching in inductive circuit , they are particul

5.109. 2sc4231.pdf Size:126K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4231 DESCRIPTION ·With ITO-220 package ·Switching power transistor ·High voltage ,high speed PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Ope

5.110. 2sc4215.pdf Size:882K _htsemi

2SC4215 TRANSISTOR (NPN) SOT-323 FEATURES Small reverse transfer capacitance: Cre= 0.55pF(typ.) Low noise figure: NF=2dB (typ.) (f=100 MHz) 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25? unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Current -C

5.111. 2sc4215 sot-323.pdf Size:265K _lge

2SC4215 SOT-323 Transistor(NPN) SOT-323 1. BASE 2. EMITTER 3. COLLECTOR Features Small reverse transfer capacitance: Cre= 0.55pF(typ.) Low noise figure: NF=2dB (typ.) (f=100 MHz) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitt

5.112. 2sc4215.pdf Size:649K _wietron

2SC4215 NPN Silicon Transistor P b Lead(Pb)-Free 3 1 2 1. BASE 2. EMITTER FEATURES: 3. COLLECTOR SOT-323(SC-70) * Power dissipation SOT-323 Outline Demensions Unit:mm A SOT-323 Dim Min Max A 0.30 0.40 B C TOP VIEW B 1.15 1.35 C 2.00 2.40 D - 0.65 D E 0.30 0.40 G E G 1.20 1.40 H H 1.80 2.20 J 0.00 0.10 K K 0.80 1.00 L 0.42 0.53 L M 0.10 0.25 J M WEITRON 1/4 20-J

5.113. 2sc4226.pdf Size:933K _kexin

SMD Type Transistors NPN Transistors 2SC4226 ■ Features ● Collector Current Capability IC=100mA ● Collector Emitter Voltage VCEO=12V 1.Base 2.Emitter 3.Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage VEBO 3 Collector Current - Continuous IC 100 m

5.114. 2sc4269.pdf Size:886K _kexin

SMD Type Transistors NPN Transistors 2SC4269 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=50mA 1 2 ● Collector Emitter Voltage VCEO=15V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect

5.115. 2sc4272.pdf Size:1285K _kexin

SMD Type Transistors NPN Transistors 2SC4272 1.70 0.1 ■ Features ● Collector Current Capability IC=1A ● Collector Emitter Voltage VCEO=45V 0.42 0.1 0.46 0.1 ● Small Size Making It Easy To Provide High-Density, To Provide High-Density, 1.Base ● 27MHz CB Transceiver Driver Applications 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Ra

5.116. 2sc4210.pdf Size:889K _kexin

SMD Type Transistors NPN Transistors 2SC4210 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=800mA ● Collector Emitter Voltage VCEO=30V 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 ● Complementary to 2SA1621 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector -

5.117. 2sc4209.pdf Size:879K _kexin

SMD Type Transistors NPN Transistors 2SC4209 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=300mA 1 2 ● Collector Emitter Voltage VCEO=80V +0.05 0.95+0.1 -0.1 0.1 -0.01 ● Complementary to 2SA1620 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector

5.118. 2sc4270.pdf Size:1208K _kexin

SMD Type Transistors NPN Transistors 2SC4270 SOT-23 Unit: mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 ■ Features ● Collector Current Capability IC=50mA 1 2 ● Collector Emitter Voltage VCEO=15V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collect

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: UPA805T | UPA801TC-GB | UPA801TC-FB | MJB32B | KT8232B | KT8232A | FJL6820 | BUL1203E | BUF405AF | BU459 | BU458 | BU457 | BU415 | BU305F | BU304F | BFP420W | BD912I | A0718 | 3DK104F | 3DK104E |