2SC4290
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC4290
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 200
W
Tensión colector-base (Vcb): 1400
V
Tensión colector-emisor (Vce): 600
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 20
A
Temperatura operativa máxima (Tj): 175
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3
MHz
Capacitancia de salida (Cc): 400
pF
Ganancia de corriente contínua (hfe): 8
Paquete / Cubierta:
TO264
Búsqueda de reemplazo de transistor bipolar 2SC4290
2SC4290
Datasheet (PDF)
8.3. Size:92K sanyo
2sc4293.pdf 

Ordering number EN2963 NPN Triple Diffused Planar Silicon Transistor 2SC4293 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=300ns max). unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (adoption of HVP process). [2SC4293] Adoption of MBIT process. 16.0 5.6 3.4 On-chip
8.4. Size:39K sanyo
2sc4291.pdf 

Ordering number EN2679A NPN Triple Diffused Planar Silicon Transistor 2SC4291 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=0.3 s max). unit mm High breakdown voltage (VCBO=1500V). 2022A High reliability (adoption of HVP process). [2SC4291] Adoption of MBIT process. 15.6 3.2 4.8 14.0 2.0
8.5. Size:237K jmnic
2sc4297.pdf 

JMnic Product Specification Silicon NPN Power Transistors 2SC4297 DESCRIPTION With TO-3PML package High voltage ,high speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS
8.7. Size:233K jmnic
2sc4298.pdf 

JMnic Product Specification Silicon NPN Power Transistors 2SC4298 DESCRIPTION With TO-3PML package High voltage ,high speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS
8.8. Size:25K sanken-ele
2sc4296.pdf 

2SC4296 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4296 Symbol Conditions 2SC4296 Unit Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 500 ICBO VCB=500V 100max V
8.9. Size:25K sanken-ele
2sc4297.pdf 

2SC4297 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4297 Unit Symbol Conditions 2SC4297 Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO V ICBO VCB=500V 100max A 50
8.10. Size:25K sanken-ele
2sc4299.pdf 

2SC4299 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application Switching Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4299 Symbol Conditions 2SC4299 Unit Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 900 ICBO VCB=800V 100max A V VCEO 800 IE
8.11. Size:26K sanken-ele
2sc4298.pdf 

2SC4298 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) 2SC4298 Symbol 2SC4298 Symbol Conditions Unit Unit 0.2 0.2 5.5 15.6 0.2 3.45 100max VCBO 500 ICBO VCB=500V
8.13. Size:188K inchange semiconductor
2sc4293.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4293 DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed Built-in Damper Diode Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition color display horizontal deflection output applications ABSOLU
8.16. Size:222K inchange semiconductor
2sc4298.pdf 

isc Silicon NPN Power Transistor 2SC4298 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
8.17. Size:188K inchange semiconductor
2sc4294.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4294 DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability Built-in Damper Diode Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition color display horizontal deflection output
Otros transistores... 2SC4285
, 2SC4286
, 2SC4287
, 2SC4288
, 2SC4288A
, 2SC4289
, 2SC4289A
, 2SC429
, D882
, 2SC4290A
, 2SC4291
, 2SC4292
, 2SC4293
, 2SC4294
, 2SC4295M
, 2SC4296
, 2SC4297
.
History: UMB3N
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