2SC4305 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Ordering number:EN2930ANPN Epitaxial Planar Silicon Transistor2SC4306High-Current Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm Low saturation voltage.2045B Fast switching speed.[2SC4306] Large current capacity.6.52.35.0 Small and slim package making it easy to make0.542SC4306-used set smaller.0.85

2SC4308Silicon NPN Epitaxial PlanarApplicationVHF Wide band amplifierOutlineTO-92 (2)1. Base2. Emitter3. Collector3212SC4308Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 3VCollector current IC 300 mACollector peak current iC (peak) 500 mAC

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4303 DESCRIPTION With TO-3PML package High voltage switchihg transistor APPLICATIONS Switching Regulator, Lighting Inverter and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITI

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4300 DESCRIPTION With TO-3PML package High voltage switchihg transistor APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4301 DESCRIPTION With TO-3PML package High voltage switchihg transistor APPLICATIONS Switching Regulator, Lighting Inverter and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITI

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4304 DESCRIPTION With TO-220F package High voltage High speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITI

2SC4300Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)Application : Switching Regulator and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC4300 Symbol Conditions 2SC4300 UnitUnit0.20.2 5.515.60.23.45VCBO 900 ICBO VCB=800V 100max AVVCEO 800 IE

2SC4301Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)Application : Switching Regulator, Lighting Inverter and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC4301 Unit Symbol Conditions 2SC4301 Unit0.20.2 5.515.60.23.45VCBO 900 V VCB=800V 100max A

2SC4304Silicon NPN Triple Diffused Planar Transistor (High Voltage High Speed Switchihg Transistor)Application : Switching Regulator and General PurposeExternal Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC4304 Symbol Conditions 2SC4304 UnitUnit0.24.20.210.1c0.52.8VCBO 900 ICBO VCB=800V 100max AVV

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4303DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4308DESCRIPTIONLow NoiseHigh Gain Bandwidth Product100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in VHF wide band amplifiers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 30 VCBO

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4300DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching Speed100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4301DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4304DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25