2SC4305 Todos los transistores

 8.1. Size:155K  1
 2sc4309.pdf

 8.2. Size:100K  sanyo
 2sc4306.pdf

Ordering number EN2930A NPN Epitaxial Planar Silicon Transistor 2SC4306 High-Current Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm Low saturation voltage. 2045B Fast switching speed. [2SC4306] Large current capacity. 6.5 2.3 5.0 Small and slim package making it easy to make 0.5 4 2SC4306-used set smaller. 0.85

 8.3. Size:30K  hitachi
 2sc4308.pdf

2SC4308 Silicon NPN Epitaxial Planar Application VHF Wide band amplifier Outline TO-92 (2) 1. Base 2. Emitter 3. Collector 3 2 1 2SC4308 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3V Collector current IC 300 mA Collector peak current iC (peak) 500 mA C

 8.4. Size:151K  jmnic
 2sc4303.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC4303 DESCRIPTION With TO-3PML package High voltage switchihg transistor APPLICATIONS Switching Regulator, Lighting Inverter and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITI

 8.5. Size:188K  jmnic
 2sc4300.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC4300 DESCRIPTION With TO-3PML package High voltage switchihg transistor APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS

 8.6. Size:194K  jmnic
 2sc4301.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC4301 DESCRIPTION With TO-3PML package High voltage switchihg transistor APPLICATIONS Switching Regulator, Lighting Inverter and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITI

 8.7. Size:182K  jmnic
 2sc4304.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC4304 DESCRIPTION With TO-220F package High voltage High speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITI

 8.8. Size:26K  sanken-ele
 2sc4300.pdf

2SC4300 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application Switching Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4300 Symbol Conditions 2SC4300 Unit Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 900 ICBO VCB=800V 100max A V VCEO 800 IE

 8.9. Size:25K  sanken-ele
 2sc4301.pdf

2SC4301 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application Switching Regulator, Lighting Inverter and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4301 Unit Symbol Conditions 2SC4301 Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 900 V VCB=800V 100max A

 8.10. Size:25K  sanken-ele
 2sc4304.pdf

2SC4304 Silicon NPN Triple Diffused Planar Transistor (High Voltage High Speed Switchihg Transistor) Application Switching Regulator and General Purpose External Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4304 Symbol Conditions 2SC4304 Unit Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 900 ICBO VCB=800V 100max A V V

 8.11. Size:188K  inchange semiconductor
 2sc4303.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4303 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

 8.12. Size:176K  inchange semiconductor
 2sc4308.pdf

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4308 DESCRIPTION Low Noise High Gain Bandwidth Product 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in VHF wide band amplifiers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 30 V CBO

 8.13. Size:221K  inchange semiconductor
 2sc4300.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4300 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

 8.14. Size:191K  inchange semiconductor
 2sc4301.pdf

 8.15. Size:185K  inchange semiconductor
 2sc4304.pdf