2SC4320
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC4320
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1
W
Tensión colector-base (Vcb): 20
V
Tensión colector-emisor (Vce): 10
V
Corriente del colector DC máxima (Ic): 0.065
A
Temperatura operativa máxima (Tj): 125
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 10000
MHz
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: SP1
Búsqueda de reemplazo de transistor bipolar 2SC4320
2SC4320
Datasheet (PDF)
..1. Size:467K toshiba
2sc4320.pdf
2SC4320 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4320 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 15dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V
8.1. Size:467K toshiba
2sc4324.pdf
2SC4324 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4324 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 9.5dB (f = 2 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V
8.2. Size:464K toshiba
2sc4322.pdf
2SC4322 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4322 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 7.5dB (f = 2 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V
8.3. Size:466K toshiba
2sc4325.pdf
2SC4325 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4325 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 7.5dB (f = 2 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V
8.4. Size:468K toshiba
2sc4321.pdf
2SC4321 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4321 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V
8.5. Size:1773K kexin
2sc4322.pdf
SMD Type TransistorsNPN Transistors2SC4322SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=15mA1 2 Collector Emitter Voltage VCEO=10V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Colle
8.6. Size:1780K kexin
2sc4325.pdf
SMD Type TransistorsNPN Transistors2SC4325 Features Collector Current Capability IC=15mA Collector Emitter Voltage VCEO=10V1.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 10 V Emitter - Base Voltage VEBO 1.5 Collector Current - Continuous IC 15
8.7. Size:1808K kexin
2sc4321.pdf
SMD Type TransistorsNPN Transistors2SC4321 Features Collector Current Capability IC=40mA Collector Emitter Voltage VCEO=10V1.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 10 V Emitter - Base Voltage VEBO 1.5 Collector Current - Continuous IC 40
8.8. Size:183K inchange semiconductor
2sc4327.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4327DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 35V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 0.5V(Max)@ (I = 5A, I = 0.3A)CE(sat) C BComplement to Type 2SA1643100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned
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