2SC4349 Todos los transistores

 

2SC4349 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC4349

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-base (Vcb): 100 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 10000

Empaquetado / Estuche: X104

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2SC4349 Datasheet (PDF)

4.1. 2sc4346.pdf Size:112K _nec

2SC4349
2SC4349

DATA SHEET SILICON POWER TRANSISTOR 2SC4346,4346-Z NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH SPEED SWITCHING, HIGH VOLTAGE SWITCHING ORDERING INFORMATION DESCRIPTION The 2SC4346 is a mold power transistor developed for PART NUMBER PACKAGE high-speed switching, high voltage switching, and is ideal 2SC4346 TO-251 (MP-3) for use as a driver in devices such as switching regul

4.2. 2sc4342.pdf Size:166K _nec

2SC4349
2SC4349

DATA SHEET SILICON POWER TRANSISTOR 2SC4342 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING ORDERING INFORMATION DESCRIPTION The 2SC4342 is a high-speed Darlington power transistor. PART NUMBER PACKAGE This transistor is ideal for high-precision control such as PWM 2SC4342 TO-126 (MP-5) control for pulse motors or blushless of OA and FA equipme

 5.1. 2sc4332-z.pdf Size:179K _update

2SC4349
2SC4349

IC SMD Type Transistors SMD Type Transistors SMD Type ICIC SMD Type Transistors SMD Type Transistors SMDType Transistors SMDType Transistors Product specification 2SC4332-Z TO-252 Unit: mm +0.15 +0.1 Features 6.50-0.15 2.30-0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 Low collector saturation voltage. Fast switching speed. High DC current gain. 0.127 +0.1 max 0.80-0.1 +0.1 2.3 0.60-0

5.2. 2sc4331-z.pdf Size:267K _update

2SC4349
2SC4349

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 5.3. 2sc4331-zk.pdf Size:267K _update

2SC4349
2SC4349

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.4. 2sc4322.pdf Size:464K _toshiba

2SC4349
2SC4349

2SC4322 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4322 VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Low noise figure, high gain. • NF = 1.8dB, |S |2 = 7.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V

 5.5. 2sc4317.pdf Size:467K _toshiba

2SC4349
2SC4349

2SC4317 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4317 VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Low noise figure, high gain. • NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V

5.6. 2sc4315.pdf Size:463K _toshiba

2SC4349
2SC4349

2SC4315 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4315 VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Low noise figure, high gain. • NF = 1.1dB, |S |2 = 14dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V C

5.7. 2sc4324.pdf Size:467K _toshiba

2SC4349
2SC4349

2SC4324 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4324 VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Low noise figure, high gain. • NF = 1.8dB, |S |2 = 9.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V

5.8. 2sc4393.pdf Size:318K _toshiba

2SC4349
2SC4349

2SC4393 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4393 VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Low noise figure. • NF = 1.5dB, |S |2 = 16dB (f = 500 MHz) 21e • NF = 1.7dB, |S |2 = 10.5dB (f = 1000 MHz) 21e Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 17 V Collector-emitter voltage

5.9. 2sc4320.pdf Size:467K _toshiba

2SC4349
2SC4349

2SC4320 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4320 VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Low noise figure, high gain. • NF = 1.1dB, |S |2 = 15dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V

5.10. 2sc4394.pdf Size:465K _toshiba

2SC4349
2SC4349

2SC4394 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4394 VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Low noise figure, high cain. • NF = 1.1dB, |S |2 = 11dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V C

5.11. 2sc4325.pdf Size:466K _toshiba

2SC4349
2SC4349

2SC4325 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4325 VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Low noise figure, high gain. • NF = 1.8dB, |S |2 = 7.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V

5.12. 2sc4321.pdf Size:468K _toshiba

2SC4349
2SC4349

2SC4321 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4321 VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Low noise figure, high gain. • NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V

5.13. 2sc4361.pdf Size:88K _sanyo

2SC4349
2SC4349

5.14. 2sc4306.pdf Size:100K _sanyo

2SC4349
2SC4349

Ordering number:EN2930A NPN Epitaxial Planar Silicon Transistor 2SC4306 High-Current Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit:mm Low saturation voltage. 2045B Fast switching speed. [2SC4306] Large current capacity. 6.5 2.3 5.0 Small and slim package making it easy to make 0.5 4 2SC4306-used set smaller. 0.85 0.7 1

5.15. 2sc4365.pdf Size:147K _sanyo

2SC4349
2SC4349

Ordering number:EN3007 NPN Epitaxial Planar Silicon Transistor 2SC4365 VHF, UHF/MIX. OSC. Low-Voltage High-Frequency Amplifier Applications Features Package Dimensions Low-voltage operation unit:mm : fT=3.0GHz typ (VCE=3V) 2018B : MAG=12dB typ (VCE=3V, IC=10mA) [2SC4365] : NF=1.5dB typ (VCE=3V, IC=5mA) 0.4 0.16 3 0~0.1 1 0.95 2 0.95 1.9 2.9 1 : Base 2 : Emitter 3 : Collec

5.16. 2sc4399.pdf Size:153K _sanyo

2SC4349
2SC4349

Ordering number:EN3020 NPN Epitaxial Planar Silicon Transistor 2SC4399 High-Frequency General-Purpose Amplifier Applications Features Package Dimensions High power gain : PG=25dB typ (f=100MHz). unit:mm Very small-sized package permitting the 2SC4399- 2059B applied sets to be made small and slim. [2SC4399] 0.3 0.15 3 0~0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 : Base 2 : Emit

5.17. 2sc4390.pdf Size:91K _sanyo

2SC4349
2SC4349

Ordering number:EN2958A NPN Epitaxial Planar Silicon Transistor 2SC4390 High-hFE, AF Amplifier Applications Features Package Dimensions Adoption of MBIT process. unit:mm High DC current gain (hFE=800 to 3200). 2038A Large current capacity (IC=2A). [2SC4390] Low collector-to-emitter saturation voltage 4.5 (VCE(sat)? 0.3V). 1.5 1.6 High VEBO (VEBO? 15V). 0.4 0.5 3 2 1

5.18. 2sc4363.pdf Size:88K _sanyo

2SC4349
2SC4349

5.19. 2sc4364.pdf Size:118K _sanyo

2SC4349
2SC4349

Ordering number:EN3008 NPN Epitaxial Planar Silicon Transistor 2SC4364 VHF, UHF/MIX. OSC. Low-Voltage High-Frequency Amplifier Applications Features Package Dimensions Low-voltage operation unit:mm : fT=3.0GHz typ (VCE=3V) 2018B : MAG=11dB typ (VCE=3V, IC=3mA) [2SC4364] : NF=3.0dB typ (VCE=3V, IC=3mA) 0.4 0.16 3 0~0.1 1 0.95 2 0.95 1.9 2.9 1 : Base 2 : Emitter 3 : Collect

5.20. 2sc4332 2sc4332-z.pdf Size:34K _nec

2SC4349
2SC4349

DATA SHEET SILICON POWER TRANSISTORS 2SC4332, 2SC4332-Z NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4332 and 2SC4332-Z are mold power transistors PACKAGE DRAWING (Unit: mm) developed for high-speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solen

5.21. 2sc4331 2sc4331-z.pdf Size:108K _nec

2SC4349
2SC4349

DATA SHEET SILICON POWER TRANSISTORS 2SC4331, 2SC4331-Z NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4331 and 2SC4331-Z are mold power transistors PACKAGE DRAWING (UNIT: mm) developed for high-speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, soleno

5.22. 2sc4331.pdf Size:273K _nec

2SC4349
2SC4349

5.23. 2sc4351.pdf Size:110K _nec

2SC4349
2SC4349

DATA SHEET DARLINGTON POWER TRANSISTOR 2SC4351 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SC4351 is a high-speed Darlington power transistor. This PACKAGE DRAWING (UNIT: mm) transistor is ideal for high-precision control such as PWM control for pulse motors or blushless motor of OA and FA equipment. FEATURES Mold package that does not require

5.24. 2sc4391 e.pdf Size:43K _panasonic

2SC4349
2SC4349

Transistor 2SC4391 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm Complementary to 2SA1674 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. 0.65 max. Allowing supply with the radial taping. +0.1 0.450.05 Absolute Maximum Ratings (Ta=25?C) 2.5

5.25. 2sc4358.pdf Size:56K _panasonic

2SC4349

5.26. 2sc4308.pdf Size:30K _hitachi

2SC4349
2SC4349

2SC4308 Silicon NPN Epitaxial Planar Application VHF Wide band amplifier Outline TO-92 (2) 1. Base 2. Emitter 3. Collector 3 2 1 2SC4308 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3V Collector current IC 300 mA Collector peak current iC (peak) 500 mA Colle

5.27. 2sc4366.pdf Size:29K _hitachi

2SC4349
2SC4349

2SC4366 Silicon NPN Epitaxial Application Low Frequency amplifier Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4366 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 15 V Collector current IC 300 mA Collector power dissipation PC 150 mW Junction temperat

5.28. 2sc4367.pdf Size:29K _hitachi

2SC4349
2SC4349

2SC4367 Silicon NPN Epitaxial Application High Frequency amplifier Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SC4367 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3V Collector current IC 100 mA Collector peak current iC (peak) 200 mA Collector po

5.29. 2sc4336.pdf Size:117K _savantic

2SC4349
2SC4349

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4336 DESCRIPTION With TO-220Fa package Fast switching speed Low collector saturation voltage APPLICATIONS For use in switching power supplies ,DC/DC converters,motor drivers,solenoid drivers,etc PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitt

5.30. 2sc4373.pdf Size:72K _secos

2SC4349

2SC4373 0.8 A , 120 V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES Small Flat Package. Large Current Capacity. 4 1 2 3 A CLASSIFICATION OF hFE E C Product-Rank 2SC4373-O 2SC4373-Y B D Range 80~160 120~240 F G Marking CO CY H K J L PACKAGE INFORMATION Mi

5.31. 2sc4375.pdf Size:82K _secos

2SC4349

2SC4375 1.5 A , 30 V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES ? Small Flat Package. ? Low Collector-Emitter Saturation Voltage. 4 1 2 3 A CLASSIFICATION OF hFE E C Product-Rank 2SC4375-O 2SC4375-Y B D Range 100~200 160~320 F G Marking GO GY H K J L PACKAGE

5.32. 2sc4357.pdf Size:152K _isahaya

2SC4349
2SC4349

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http://www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN ??Keep safety in your circuit designs ! ? Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur

5.33. 2sc4356.pdf Size:149K _isahaya

2SC4349
2SC4349

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http://www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN ??Keep safety in your circuit designs ! ? Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur

5.34. 2sc4301.pdf Size:194K _jmnic

2SC4349
2SC4349

JMnic Product Specification Silicon NPN Power Transistors 2SC4301 DESCRIPTION ·With TO-3PML package ·High voltage switchihg transistor APPLICATIONS ·Switching Regulator, ·Lighting Inverter and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS V

5.35. 2sc4350.pdf Size:153K _jmnic

2SC4349
2SC4349

JMnic Product Specification Silicon NPN Power Transistors 2SC4350 DESCRIPTION ·With TO-220 package ·High DC current gain ·DARLINGTON APPLICATIONS ·For high speed power switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETE

5.36. 2sc4336.pdf Size:161K _jmnic

2SC4349
2SC4349

JMnic Product Specification Silicon NPN Power Transistors 2SC4336 DESCRIPTION ·With TO-220Fa package ·Fast switching speed ·Low collector saturation voltage APPLICATIONS ·For use in switching power supplies ,DC/DC converters,motor drivers,solenoid drivers,etc PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute ma

5.37. 2sc4369.pdf Size:149K _jmnic

2SC4349
2SC4349

JMnic Product Specification Silicon NPN Power Transistors 2SC4369 DESCRIPTION ·With TO-220F package ·Complement to type 2SA1658 ·Good linearity of hFE APPLICATIONS ·For general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT

5.38. 2sc4303.pdf Size:151K _jmnic

2SC4349
2SC4349

JMnic Product Specification Silicon NPN Power Transistors 2SC4303 DESCRIPTION ·With TO-3PML package ·High voltage switchihg transistor APPLICATIONS ·Switching Regulator, ·Lighting Inverter and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS V

5.39. 2sc4304.pdf Size:182K _jmnic

2SC4349
2SC4349

JMnic Product Specification Silicon NPN Power Transistors 2SC4304 DESCRIPTION ·With TO-220F package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS V

5.40. 2sc4300.pdf Size:188K _jmnic

2SC4349
2SC4349

JMnic Product Specification Silicon NPN Power Transistors 2SC4300 DESCRIPTION ·With TO-3PML package ·High voltage switchihg transistor APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE

5.41. 2sc4301.pdf Size:25K _sanken-ele

2SC4349

2SC4301 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) Symbol 2SC4301 Unit Symbol Conditions 2SC4301 Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 900 V VCB=800V 100max A ICBO VC

5.42. 2sc4381 2sc4382.pdf Size:23K _sanken-ele

2SC4349

2SC4381/4382 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1667/1668) Application : TV Vertical Output, Audio Output Driver and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F) Symbol 2SC4381 2SC4382 Unit Symbol Conditions 2SC4381 2SC4382 Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 150 200 V 10m

5.43. 2sc4304.pdf Size:25K _sanken-ele

2SC4349

2SC4304 Silicon NPN Triple Diffused Planar Transistor (High Voltage High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose External Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) Symbol 2SC4304 Symbol Conditions 2SC4304 Unit Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 900 ICBO VCB=800V 100max A V VCEO 800

5.44. 2sc4388.pdf Size:25K _sanken-ele

2SC4349

2SC4388 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1673) Application : Audio and General Purpose (Ta=25C) External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics Symbol Conditions 2SC4388 Symbol 2SC4388 Unit Unit 0.2 0.2 5.5 15.6 0.2 3.45 ICBO VCB=200V 10max VCBO 200 V A IEBO VEB=6V 10max A VCEO 180 V V(BR)CE

5.45. 2sc4300.pdf Size:26K _sanken-ele

2SC4349

2SC4300 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) Symbol 2SC4300 Symbol Conditions 2SC4300 Unit Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 900 ICBO VCB=800V 100max A V VCEO 800 IEBO VEB=7V

5.46. 2sc4371.pdf Size:259K _inchange_semiconductor

2SC4349
2SC4349

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4371 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400(Min) ·Excellent Switching Times- : tr= 1.0?s(Max), tf= 1.0?s(Max)@ IC= 4A APPLICATIONS ·Switching regulator application ·High voltage switching application ·High Speed DC-DC converter application ·Fluorescent l

5.47. 2sc4301.pdf Size:146K _inchange_semiconductor

2SC4349
2SC4349

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4301 DESCRIPTION Ў¤ With TO-3PML package Ў¤ High voltage switchihg transistor APPLICATIONS Ў¤ Switching Regulator, Ў¤ Lighting Inverter and general purpose PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBO

5.48. 2sc4327.pdf Size:245K _inchange_semiconductor

2SC4349
2SC4349

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4327 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max)@ (IC= 5A, IBB= 0.3A) ·Complement to Type 2SA1643 APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER

5.49. 2sc4385.pdf Size:96K _inchange_semiconductor

2SC4349
2SC4349

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4385 DESCRIPTION · ·With TO-3PML package ·Complement to type 2SA1670 APPLICATIONS ·Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collecto

5.50. 2sc4350.pdf Size:123K _inchange_semiconductor

2SC4349
2SC4349

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4350 DESCRIPTION Ў¤ With TO-220 package Ў¤ High DC current gain Ў¤ DARLINGTON APPLICATIONS Ў¤ For high speed power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж

5.51. 2sc4313.pdf Size:263K _inchange_semiconductor

2SC4349
2SC4349

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4313 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V(Min) ·Fast Switching speed APPLICATIONS ·Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V V

5.52. 2sc4386.pdf Size:96K _inchange_semiconductor

2SC4349
2SC4349

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4386 DESCRIPTION · ·With TO-3PML package ·Complement to type 2SA1671 APPLICATIONS ·Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collecto

5.53. 2sc4336.pdf Size:126K _inchange_semiconductor

2SC4349
2SC4349

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4336 DESCRIPTION Ў¤ With TO-220Fa package Ў¤ Fast switching speed Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ For use in switching power supplies ,DC/DC converters,motor drivers,solenoid drivers,etc PINNING PIN 1 2 3 DESCRIPTION Base Collector Fig.1 simplified outline (TO-220Fa) and symbol Em

5.54. 2sc4308.pdf Size:122K _inchange_semiconductor

2SC4349
2SC4349

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4308 DESCRIPTION ·Low Noise ·High Gain Bandwidth Product APPLICATIONS ·Designed for use in VHF wide band amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 3 V IC Collector

5.55. 2sc4330.pdf Size:274K _inchange_semiconductor

2SC4349
2SC4349

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4330 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 8A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V (Min) ·High Switching Speed APPLICATIONS ·Designed for high speed and power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER V

5.56. 2sc4387.pdf Size:96K _inchange_semiconductor

2SC4349
2SC4349

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4387 DESCRIPTION · ·With TO-3PML package ·Complement to type 2SA1672 APPLICATIONS ·Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collecto

5.57. 2sc4370.pdf Size:255K _inchange_semiconductor

2SC4349
2SC4349

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4370 DESCRIPTION ·High Collector-Emitter Breakdown Voltage VCEO= 160V(Min) ·Complement to Type 2SA1659 ·Full-mold package that does not require an insulating board or bushing when mounting. APPLICATIONS ·Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAME

5.58. 2sc4382.pdf Size:251K _inchange_semiconductor

2SC4349
2SC4349

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4382 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·DC Current Gain- : hFE= 60(Min)@ (VCE= 10V, IC= 0.7A) ·Complement to Type 2SA1668 APPLICATIONS ·Designed for TV vertical output ,audio output driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=

5.59. 2sc4381.pdf Size:251K _inchange_semiconductor

2SC4349
2SC4349

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4381 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·DC Current Gain- : hFE= 60(Min)@ (VCE= 10V, IC= 0.7A) ·Complement to Type 2SA1667 APPLICATIONS ·Designed for TV vertical output ,audio output driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=

5.60. 2sc4369.pdf Size:120K _inchange_semiconductor

2SC4349
2SC4349

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4369 DESCRIPTION Ў¤ With TO-220F package Ў¤ Complement to type 2SA1658 Ў¤ Good linearity of hFE APPLICATIONS Ў¤ For general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCE

5.61. 2sc4303.pdf Size:116K _inchange_semiconductor

2SC4349
2SC4349

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4303 DESCRIPTION Ў¤ With TO-3PML package Ў¤ High voltage switchihg transistor APPLICATIONS Ў¤ Switching Regulator, Ў¤ Lighting Inverter and general purpose PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBO

5.62. 2sc4368.pdf Size:245K _inchange_semiconductor

2SC4349
2SC4349

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4368 DESCRIPTION ·Collector-Emitter Breakdown Voltage : VCEO= 150V(Min) ·Complement to Type 2SA1657 APPLICATIONS ·Designed for TV, monitor vertical output applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Volta

5.63. 2sc4304.pdf Size:144K _inchange_semiconductor

2SC4349
2SC4349

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4304 DESCRIPTION Ў¤ With TO-220F package Ў¤ High voltage Ў¤ High speed switching APPLICATIONS Ў¤ For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL

5.64. 2sc4388.pdf Size:125K _inchange_semiconductor

2SC4349
2SC4349

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4388 DESCRIPTION · ·With TO-3PML package ·Complement to type 2SA1673 APPLICATIONS ·Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collecto

5.65. 2sc4300.pdf Size:145K _inchange_semiconductor

2SC4349
2SC4349

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4300 DESCRIPTION Ў¤ With TO-3PML package Ў¤ High voltage switchihg transistor APPLICATIONS Ў¤ For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO

5.66. 2sc4373.pdf Size:364K _htsemi

2SC4349

2SC4373 SOT-89-3L TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package Large Current Capacity 3. EMITTER MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current 800 mA PC Collector Power Dissipation 500 mW R?JA Th

5.67. 2sc4375.pdf Size:333K _htsemi

2SC4349

2SC4375 SOT-89-3L TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package Low Collector- Emitter Saturation Voltage 3. EMITTER MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1.5 A PC Collector Power Dissipation

5.68. 2sc4374.pdf Size:334K _htsemi

2SC4349

2SC4374 SOT-89-3L TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package Low Collector- Emitter Saturation Voltage 3. EMITTER MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 400 mA PC Collector Power Dissipation

5.69. st2sc4375u.pdf Size:563K _semtech

2SC4349
2SC4349

ST 2SC4375U NPN Silicon Epitaxial Planar Transistor High current application Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5 V Collector Current IC 1.5 A 0.5 Ptot W Total Power Dissipation 11) Junction Temperature TJ 150 ℃ Storage Temperature Range TStg -

5.70. st2sc4378u.pdf Size:634K _semtech

2SC4349
2SC4349

ST 2SC4378U NPN Silicon Epitaxial Planar Transistor Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value Unit Collector Base Voltage VCBO 80 V Collector Emitter Voltage VCEO 60 V Emitter Base Voltage VEBO 5 V Collector Current IC 1 A Peak Collector Current ICP 2 A 0.5 Ptot W Total Power Dissipation 1 1) Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg

5.71. st2sc4379u.pdf Size:671K _semtech

2SC4349
2SC4349

ST 2SC4379U NPN Silicon Epitaxial Planar Transistor for power amplification applications Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V Collector Current IC 2 A Base Current IB 0.4 A 0.5 Ptot W Total Power Dissipation 1 1) Junction Temperature Tj 150 ℃

5.72. 2sc4322.pdf Size:1773K _kexin

2SC4349
2SC4349

SMD Type Transistors NPN Transistors 2SC4322 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=15mA 1 2 ● Collector Emitter Voltage VCEO=10V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Colle

5.73. 2sc4373.pdf Size:795K _kexin

2SC4349
2SC4349

SMD Type Transistors NPN Transistors 2SC4373 1.70 0.1 ■ Features ● Collector Current Capability IC=800mA ● Collector Emitter Voltage VCEO=120V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 120 V Emitter - Base Voltage VEBO 5 Collec

5.74. 2sc4317.pdf Size:1814K _kexin

2SC4349
2SC4349

SMD Type Transistors NPN Transistors 2SC4317 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=40mA 1 2 ● Collector Emitter Voltage VCEO=10V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collect

5.75. 2sc4375.pdf Size:309K _kexin

2SC4349

SMD Type Transistors NPN Transistors 2SC4375 1.70 0.1 ■ Features ● Collector Current Capability IC=1.5 A ● Collector Emitter Voltage VCEO=30 V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 5 Collecto

5.76. 2sc4365.pdf Size:1225K _kexin

2SC4349
2SC4349

SMD Type Transistors NPN Transistors 2SC4365 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=50mA 1 2 ● Collector Emitter Voltage VCEO=15V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collect

5.77. 2sc4325.pdf Size:1780K _kexin

2SC4349
2SC4349

SMD Type Transistors NPN Transistors 2SC4325 ■ Features ● Collector Current Capability IC=15mA ● Collector Emitter Voltage VCEO=10V 1.Base 2.Emitter 3.Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 10 V Emitter - Base Voltage VEBO 1.5 Collector Current - Continuous IC 15

5.78. 2sc4357.pdf Size:1063K _kexin

2SC4349
2SC4349

SMD Type Transistors NPN Transistors 2SC4357 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=2A ● Collector Emitter Voltage VCEO=60V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 60 V Emitter - Base Voltage VEBO

5.79. 2sc4366.pdf Size:535K _kexin

2SC4349
2SC4349

SMD Type Transistors NPN Transistors 2SC4366 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=300mA 1 2 ● Collector Emitter Voltage VCEO=50V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Coll

5.80. 2sc4390.pdf Size:821K _kexin

2SC4349
2SC4349

SMD Type Transistors NPN Transistors 2SC4390 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=2A ● Collector Emitter Voltage VCEO=10V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 10 V Emitter - Base Voltage VEBO

5.81. 2sc4364.pdf Size:1223K _kexin

2SC4349
2SC4349

SMD Type Transistors NPN Transistors 2SC4364 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=30mA 1 2 ● Collector Emitter Voltage VCEO=15V +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collec

5.82. 2sc4321.pdf Size:1808K _kexin

2SC4349
2SC4349

SMD Type Transistors NPN Transistors 2SC4321 ■ Features ● Collector Current Capability IC=40mA ● Collector Emitter Voltage VCEO=10V 1.Base 2.Emitter 3.Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 10 V Emitter - Base Voltage VEBO 1.5 Collector Current - Continuous IC 40

Otros transistores... 2SC431 , 2SC4310 , 2SC4311 , 2SC4312 , 2SC4313 , 2SC4314 , 2SC4315 , 2SC4316 , BC147 , 2SC4318 , 2SC432 , 2SC4320 , 2SC4321 , 2SC4322 , 2SC4323 , 2SC4324 , 2SC4325 .

 
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BJT: 2SA1897 | KRC664E | KRC663E | SMUN5335DW | MP1526 | 3DD5287 | E3150 | 3DD2499 | 3DD4212DT | 2SC9014 | US6H23 | UMH9NFHA | UMH8NFHA | UMH6NFHA | UMH5NFHA | UMH4NFHA | UMH3NFHA | UMH33N | UMH32N | UMH2NFHA |

 

 

 
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