2SC4379 Todos los transistores

 

2SC4379 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC4379

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 120 W

Tensión colector-base (Vcb): 500 V

Tensión colector-emisor (Vce): 400 V

Corriente del colector DC máxima (Ic): 15 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 200

Empaquetado / Estuche: X104

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2SC4379 Datasheet (PDF)

1.1. st2sc4379u.pdf Size:671K _semtech

2SC4379
2SC4379

ST 2SC4379U NPN Silicon Epitaxial Planar Transistor for power amplification applications Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V Collector Current IC 2 A Base Current IB 0.4 A 0.5 Ptot W Total Power Dissipation 1 1) Junction Temperature Tj 150 ℃

4.1. 2sc4373.pdf Size:72K _secos

2SC4379

2SC4373 0.8 A , 120 V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES Small Flat Package. Large Current Capacity. 4 1 2 3 A CLASSIFICATION OF hFE E C Product-Rank 2SC4373-O 2SC4373-Y B D Range 80~160 120~240 F G Marking CO CY H K J L PACKAGE INFORMATION Mi

4.2. 2sc4375.pdf Size:82K _secos

2SC4379

2SC4375 1.5 A , 30 V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES ? Small Flat Package. ? Low Collector-Emitter Saturation Voltage. 4 1 2 3 A CLASSIFICATION OF hFE E C Product-Rank 2SC4375-O 2SC4375-Y B D Range 100~200 160~320 F G Marking GO GY H K J L PACKAGE

 4.3. 2sc4370.pdf Size:255K _inchange_semiconductor

2SC4379
2SC4379

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4370 DESCRIPTION ·High Collector-Emitter Breakdown Voltage VCEO= 160V(Min) ·Complement to Type 2SA1659 ·Full-mold package that does not require an insulating board or bushing when mounting. APPLICATIONS ·Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAME

4.4. 2sc4371.pdf Size:259K _inchange_semiconductor

2SC4379
2SC4379

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4371 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400(Min) ·Excellent Switching Times- : tr= 1.0?s(Max), tf= 1.0?s(Max)@ IC= 4A APPLICATIONS ·Switching regulator application ·High voltage switching application ·High Speed DC-DC converter application ·Fluorescent l

 4.5. 2sc4373.pdf Size:364K _htsemi

2SC4379

2SC4373 SOT-89-3L TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package Large Current Capacity 3. EMITTER MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current 800 mA PC Collector Power Dissipation 500 mW R?JA Th

4.6. 2sc4375.pdf Size:333K _htsemi

2SC4379

2SC4375 SOT-89-3L TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package Low Collector- Emitter Saturation Voltage 3. EMITTER MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1.5 A PC Collector Power Dissipation

4.7. 2sc4374.pdf Size:334K _htsemi

2SC4379

2SC4374 SOT-89-3L TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package Low Collector- Emitter Saturation Voltage 3. EMITTER MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 400 mA PC Collector Power Dissipation

4.8. st2sc4375u.pdf Size:563K _semtech

2SC4379
2SC4379

ST 2SC4375U NPN Silicon Epitaxial Planar Transistor High current application Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5 V Collector Current IC 1.5 A 0.5 Ptot W Total Power Dissipation 11) Junction Temperature TJ 150 ℃ Storage Temperature Range TStg -

4.9. st2sc4378u.pdf Size:634K _semtech

2SC4379
2SC4379

ST 2SC4378U NPN Silicon Epitaxial Planar Transistor Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value Unit Collector Base Voltage VCBO 80 V Collector Emitter Voltage VCEO 60 V Emitter Base Voltage VEBO 5 V Collector Current IC 1 A Peak Collector Current ICP 2 A 0.5 Ptot W Total Power Dissipation 1 1) Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg

4.10. 2sc4373.pdf Size:795K _kexin

2SC4379
2SC4379

SMD Type Transistors NPN Transistors 2SC4373 1.70 0.1 ■ Features ● Collector Current Capability IC=800mA ● Collector Emitter Voltage VCEO=120V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 120 V Emitter - Base Voltage VEBO 5 Collec

4.11. 2sc4375.pdf Size:309K _kexin

2SC4379

SMD Type Transistors NPN Transistors 2SC4375 1.70 0.1 ■ Features ● Collector Current Capability IC=1.5 A ● Collector Emitter Voltage VCEO=30 V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 5 Collecto

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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